研究目的
To demonstrate experimentally the spin Hall effect in graphene induced by MoS2 proximity at room temperature and investigate spin-to-charge conversion in graphene/MoS2 van der Waals heterostructures.
研究成果
The study unambiguously demonstrates proximity-induced inverse spin Hall effect in graphene with MoS2, achieving room temperature operation. It also identifies a likely spin Hall effect in MoS2 contributing to spin-to-charge conversion. The device design enables high efficiency and paves the way for integrated spintronic applications using two-dimensional materials.
研究不足
The study is limited by the quality of the graphene/MoS2 interface, which affects spin absorption and conversion efficiencies. Temperature dependence shows decay in spin Hall effect signals, and the origin of in-plane spin-to-charge conversion (REE or SHE in MoS2) cannot be fully distinguished experimentally.
1：Experimental Design and Method Selection:
The study uses lateral spin valves (LSVs) with a cross-shaped graphene channel and MoS2 flakes placed on top to investigate spin transport and spin-to-charge conversion. Theoretical models and Bloch equations are employed for data analysis.
2：Sample Selection and Data Sources:
Devices are fabricated using exfoliated few-layer graphene and multilayer MoS2 flakes. Samples are characterized using optical microscopy, scanning electron microscopy, and atomic force microscopy.
3：List of Experimental Equipment and Materials:
Equipment includes a Physical Property Measurement System (Quantum Design), Keithley 2182 nanovoltmeter, Keithley 6221 current source, electron-beam lithography system, reactive ion etching system, and ultrahigh vacuum deposition system. Materials include graphene (NGS Naturgraphit GmbH), MoS2 (SPI supplies), Co electrodes, Ti/Au contacts, and poly-dimethyl siloxane (Gelpak PF GEL film).
4：Experimental Procedures and Operational Workflow:
Devices are fabricated by mechanical exfoliation and dry viscoelastic stamping. Electrical measurements are performed at temperatures from 10 K to 300 K using in-plane and out-of-plane magnetic fields. Nonlocal resistance and Hanle precession measurements are conducted to study spin transport and spin-to-charge conversion.
5：Data Analysis Methods:
Data is analyzed using solutions to Bloch equations for Hanle curves, and spin Hall angles and efficiencies are quantified through fitting and theoretical calculations.
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