研究目的
To extend the capabilities of a silicon photonics platform by integrating silicon nitride (SiN) material for various applications such as datacom, frequency comb generation, and LIDAR, demonstrating versatility and scalability using a CMOS-compatible process.
研究成果
The Si-SiN platform successfully integrates SiN to enhance functionalities in datacom, frequency comb generation, and LIDAR applications. It demonstrates low propagation losses, thermal stability, and scalability, paving the way for cost-effective and versatile photonic integrated circuits.
研究不足
The integration processes must maintain CMOS compatibility, limiting thermal budgets to prevent degradation of active devices. SiN waveguides have higher bend losses due to lower mode confinement. Residual N-H bonds in Si3N4 can cause absorption losses in the C-band. The OPA demonstration is rudimentary and requires further development for real-world applications.
1：Experimental Design and Method Selection:
The study involves developing integration processes for SiN on a silicon photonics platform, including low-stress PECVD SiNx for O-band applications and annealing-free LPCVD Si3N4 for C-band applications. Methods include fabrication on 200 mm SOI wafers using CMOS-compatible processes, optical characterization of waveguides, and demonstration of specific devices like multiplexers, frequency combs, and optical phased arrays.
2：Sample Selection and Data Sources:
Samples are fabricated on 200 mm SOI wafers with 300 nm Si and 2 μm BOX. Data is collected from wafer-level measurements using tunable lasers and photodetectors.
3：List of Experimental Equipment and Materials:
Equipment includes a semi-automatic probe station, tunable laser source (Tunics T100S, Yenista), photodetector (CT400, Yenista), fiber arrays, and electrical probes. Materials include Si, SiN, SiO2, Ti/TiN for heaters, and AlCu for contacts.
4：Experimental Procedures and Operational Workflow:
The process involves Si patterning, oxide encapsulation, CMP, SiN deposition (PECVD or LPCVD), patterning with DUV lithography and RIE, encapsulation, and optical characterization. Devices are tested for propagation losses, thermal properties, and specific functionalities.
5：Data Analysis Methods:
Data is analyzed using statistical methods for loss measurements, FDTD simulations for grating couplers, and optimization algorithms for beam steering.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
