研究目的
Investigating the effect of a metal-interlayer-semiconductor (MIS) structure on intrinsic silicon-germanium (SiGe) films for non-alloyed ohmic contact to alleviate Fermi-level pinning and reduce specific contact resistivity.
研究成果
The MIS structure with a 0.5 nm TiO2 interlayer significantly improves current density and reduces specific contact resistivity in SiGe films by alleviating Fermi-level pinning, making it a promising non-alloyed S/D contact scheme for advanced SiGe CMOS technology. Future work could explore other interlayer materials and broader parameter ranges.
研究不足
The study is limited to specific Ge concentrations (30%, 40%, 50%) and TiO2 interlayer thicknesses; other interlayer materials or thicknesses may yield different results. The experimental setup may not account for all real-world CMOS fabrication variations.
1：Experimental Design and Method Selection:
The study involves fabricating and comparing metal-semiconductor (MS) and MIS structures on epitaxially grown Si1?xGex films to evaluate electrical properties such as current density and specific contact resistivity, using transmission line model (TLM) for measurements.
2：Sample Selection and Data Sources:
Si1?xGex films with Ge concentrations of 30%, 40%, and 50% were epitaxially grown on (100) Si substrates using UHV-CVD. Samples were characterized using ellipsometry and TEM for film quality.
3：List of Experimental Equipment and Materials:
Equipment includes UHV-CVD system for film growth, atomic layer deposition (ALD) for TiO2 interlayer deposition, e-beam evaporator for metal deposition, ellipsometer for film characterization, TEM for crystallinity evaluation, and electrical measurement setups for J-V and TLM analysis. Materials include Si substrate, Si2H6 and GeH4 gases, DHF for cleaning, BOE for surface cleaning, TTIP and H2O for ALD, and Au/Ti for contact metals.
4：Experimental Procedures and Operational Workflow:
Clean Si substrate with DHF; grow Si1?xGex films via UHV-CVD; clean film surfaces with BOE; deposit TiO2 interlayer via ALD; deposit Au/Ti metal contacts via e-beam evaporation; measure back-to-back J-V characteristics and specific contact resistivity using TLM patterns.
5：Data Analysis Methods:
Analyze J-V curves to determine current density, use TLM to extract specific contact resistivity, and interpret results in terms of Fermi-level unpinning and resistance trade-offs.
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