研究目的
Investigating defect formation processes, radiation resistance, and changes in conductive and insulating characteristics of AlN ceramics under irradiation with He2+ ions.
研究成果
The research established that irradiation with He2+ ions leads to increased defects, distortions, and helium accumulation in AlN ceramics, resulting in degraded structural, conductive, and insulating properties. At high fluences, blister formation and amorphous inclusions occur, reducing radiation resistance. These findings contribute to understanding defect evolution in ceramic materials for nuclear applications and suggest further studies on material optimization.
研究不足
The study is limited to specific irradiation conditions (40 keV He2+ ions, fluences up to 5x10^17 ions/cm2, temperature 300 K) and AlN ceramics. It may not fully represent other materials or irradiation scenarios. Potential optimizations include varying ion energies, temperatures, or using different ceramic compositions.
1：Experimental Design and Method Selection:
The study involved irradiating AlN ceramic samples with 40 keV He2+ ions at fluences from 10^15 to 5x10^17 ions/cm2 at 300 K to simulate radiation effects. Methods included X-ray diffraction analysis (XRD) for structural changes, Atomic Force Microscopy (AFM) for surface morphology, and calculations using SRIM Pro 2013 software for ion interactions. Theoretical models like Kinchin-Pays were used for defect calculations.
2：Sample Selection and Data Sources:
AlN ceramic samples were sourced from CRYSTAL GmbH, Germany. Data were collected from XRD diffractograms, AFM images, and software simulations.
3：List of Experimental Equipment and Materials:
Equipment included the DC-60 heavy ion accelerator for irradiation, D8 ADVANCE ECO diffractometer (Bruker, Germany) for XRD, and AIST-NT Smart SPM for AFM. Materials were AlN ceramics.
4：Experimental Procedures and Operational Workflow:
Samples were irradiated at specified fluences. XRD was performed with CuKα radiation, voltage 10 kV, current 5 mA, 2θ range 30-75°. AFM was used to study surface morphology changes. Data analysis involved measuring diffraction peak intensities, widths, and using formulas for defects, displacements, density, and conductivity.
5：5°. AFM was used to study surface morphology changes. Data analysis involved measuring diffraction peak intensities, widths, and using formulas for defects, displacements, density, and conductivity.
Data Analysis Methods:
5. Data Analysis Methods: Data were analyzed using BrukerAXS DIFFRAC.EVA v.4.2 software, ICDD PDF-2 database, Williamson-Hall method for microstresses, and various formulas for calculating helium concentration, atomic displacements, density, porosity, defect concentration, resistivity, thermal conductivity, dislocation density, and vacancy concentration.
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