研究目的
Investigating the ultraviolet response of reduced graphene oxide/natural cellulose yarns with high flexibility for use in flexible and wearable optoelectronic applications.
研究成果
The RGOCY-based UV photodetector exhibits high flexibility, good electrical conductivity under bending, excellent mechanical stability up to 1,000 cycles, and a UV photoresponsivity of 1.0 mA/W with response times of 6 s/7 s under severe bending, making it suitable for flexible and wearable electronics applications. The solution-based fabrication method is facile and scalable for smart textiles.
研究不足
The UV photoresponsivity is lower than some prior RGO-based devices, attributed to poor photocarrier transport and weak electrical contact between RGO sheets and cellulose microfibers, as well as high recombination rates due to defects and surface roughness.
1：Experimental Design and Method Selection:
The study involved fabricating reduced graphene oxide cellulose yarns (RGOCYs) through surface chemical treatment, dip-coating, and room-temperature chemical reduction to investigate their optoelectronic properties under bending deformation.
2：Sample Selection and Data Sources:
Natural cotton yarns were used as cellulose substrates, and graphene oxide flakes were synthesized from graphite powder.
3：List of Experimental Equipment and Materials:
Materials included graphite powder, APTES, HI, sodium acetate, and others from Sigma-Aldrich; equipment included AFM (Veeco DI3100), TEM (FEI 300), FESEM (JEOL-6701F), Raman system (LabRAM HR), XPS (ESCALAB 200R), XRD (D8 Discover), source meter (Keysight B2901A), xenon lamp (Model 10500), power meter (Nova II), and a home-made motorized actuating system.
4：Experimental Procedures and Operational Workflow:
CYs were amine-functionalized with APTES, coated with GO flakes via dip-coating, chemically reduced with HI, and characterized for morphology, electrical properties, and UV photoresponse under flat and bent conditions.
5：Data Analysis Methods:
Electrical conductivity was measured using two- or four-point probe methods; photoresponse was analyzed using I-V and I-t characteristics; morphological and chemical analyses used AFM, TEM, FESEM, Raman, XPS, and XRD.
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Atomic Force Microscope
DI3100
Veeco
Measuring the thickness and lateral size of GO sheets on Si substrate.
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Transmission Electron Microscope
FEI 300
FEI
Acquiring high-resolution surface morphology and SAED patterns of GO sheets.
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Field Emission Scanning Electron Microscope
JEOL-6701F
JEOL
Analyzing the surface morphology of samples.
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Micro-Raman System
LabRAM HR
HORIBA Scientific
Measuring Raman spectra with an excitation energy of 2.41 eV at 514 nm.
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X-ray Diffractometer
D8 Discover
Bruker Corporation
Acquiring XRD patterns with Cu Kα radiation.
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Source Meter
B2901A
Keysight
Measuring current-voltage and current-time characteristics.
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Power Meter
Nova II
Ophir
Measuring the incident power of light.
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Short-pass UV Filter
84702
Edmund
Filtering UV light at 400 nm.
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X-ray Photoelectron Spectrometer
ESCALAB 200R
Thermo VG Scientific
Performing XPS measurements with a monochromatic Al Kα X-ray source.
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Xenon Lamp
Model 10500
ABET Technologies
Providing incident beam for UV photoresponse measurement.
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