研究目的
To develop monoclinic VO2 nanorod thin films via sputtering and investigate their performance in photoelectrochemical water splitting and supercapacitor applications.
研究成果
Monoclinic VO2 nanorod thin films deposited at optimal O2 flow rate (4 sccm) exhibit superior photoelectrochemical water splitting performance with high photocurrent and specific capacitance, along with excellent stability. The nanorod morphology enhances active sites and charge carrier separation, making them promising for energy applications.
研究不足
The study is limited to monoclinic VO2 thin films on ITO substrates; performance may vary with other substrates or phases. The sputtering parameters (e.g., O2 flow rates) were varied, but other factors like temperature or power were not extensively optimized. Long-term stability beyond 5000 cycles and scalability for industrial applications were not fully addressed.
1:Experimental Design and Method Selection:
Radio-frequency reactive magnetron sputtering was used to deposit VO2 thin films on ITO-coated glass substrates at 300°C with varying O2 flow rates (2, 4, 6 sccm) and constant Ar flow rate (8 sccm). Post-deposition heat treatment at 500°C for 3 hours was applied to enhance crystallinity. Characterization included XRD, SEM, UV-vis spectroscopy, XPS, and electrochemical tests.
2:Sample Selection and Data Sources:
ITO-coated glass substrates were used. Samples were denoted as V82, V84, V86 based on O2 flow rates. Data were obtained from laboratory measurements.
3:List of Experimental Equipment and Materials:
High-purity vanadium target (
4:99%), O2 and Ar gases, ITO-coated glass substrates, epoxy adhesive for masking, 1 M NaOH electrolyte. Equipment:
RF magnetron sputtering system, step profiler (Bruker Dektak XT), XRD (PANalytical X'Pert PRO), SEM (Hitachi S-4800), UV-vis spectrophotometer (Neogen), XPS (Thermo Fisher Scientific MultiLab 2000), potentiostat (Bio-Logic SP-200).
5:0). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Chamber evacuated to 5×10^-6 mbar, pre-sputtering for 10 min, deposition at 150 W power and 3 mbar pressure. Thickness measured, films characterized structurally and optically. Electrochemical tests in three-electrode cell with Ag/AgCl reference, Pt counter, and VO2 working electrode in 0.1 M NaOH. CV, LSV, I-t, and EIS measurements performed.
6:1 M NaOH. CV, LSV, I-t, and EIS measurements performed. Data Analysis Methods:
5. Data Analysis Methods: XRD data analyzed using Scherrer's formula for crystallite size. Optical bandgap calculated via Tauc relation. Specific capacitance from CV curves using formula Cs = (∫I dV) / (A ν ΔV). EIS data interpreted with Nyquist plots.
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X-ray Photoelectron Spectrometer
MultiLab 2000
Thermo Fisher Scientific
Studying chemical states and composition of VO2 thin films
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Step Profiler
Dektak XT
Bruker
Measuring the thickness of the deposited VO2 thin films
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X-ray Diffractometer
X'Pert PRO
PANalytical
Investigating the phase and crystallinity of VO2 thin films
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Scanning Electron Microscope
S-4800
Hitachi
Examining the surface morphology of VO2 thin films
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UV-vis Spectrophotometer
Neogen
Neogen
Measuring optical properties such as transmittance and bandgap
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Potentiostat
SP-200
Bio-Logic
Performing electrochemical measurements including CV, LSV, I-t, and EIS
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Vanadium Target
Sputtering target for depositing VO2 thin films
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ITO-coated Glass Substrate
Substrate for depositing VO2 thin films, used as working electrode
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