研究目的
To investigate the electrical quality of liquid phase crystallized silicon (LPC-Si) on glass for thin-film solar cell applications, focusing on material quality, surface passivation, and grain boundary properties.
研究成果
Bulk carrier lifetimes of LPC-Si intra-grain are greater than 4.5 μs for doping levels of 1016 cm?3. Poor back surface passivation causes significant Jsc and Voc losses, and grain boundaries/dislocations contribute additional losses. Improvements in back interface passivation and reduction of defect-rich regions are necessary to enhance solar cell performance.
研究不足
The spatial resolution of MWPCD mapping is lower than LBIC, making it difficult to visualize grain boundaries and dislocations. The accuracy of certain measurements, such as active area estimation for small test cells, may be subject to error. The study assumes certain parameters for simulations, which might not fully capture all real-world variations.
1：Experimental Design and Method Selection:
The study uses spatially resolved methods including light beam induced current (LBIC), microwave photoconductance decay (MWPCD) mapping, and electron backscatter diffraction (EBSD) to assess material quality. LBIC line scans are fitted with a model to characterize grain boundary recombination. 2-D-device simulation and a diode model are employed to clarify the influence of intra-grain quality, heterojunction interface, and grain boundaries/dislocations on cell performance.
2：Sample Selection and Data Sources:
n-type LPC-Si films on glass substrates with doping concentrations around 1016 cm?3 are used. Samples include IBC-SHJ solar cells and small test cells fabricated on single crystalline areas.
3：List of Experimental Equipment and Materials:
Equipment includes a self-built LBIC setup, MWPCD setup, EBSD with Oxford Instruments NordlysNano camera and Zeiss UltraPlus scanning electron microscope, solar simulator (Wacom WXS-156S-L2), spectrophotometer (PerkinElmer LAMBDA 1050), and TCAD-Sentaurus simulation tool. Materials include glass substrates, silicon precursors, a-Si layers, and various chemicals for etching and passivation.
4：Experimental Procedures and Operational Workflow:
LPC-Si films are formed using a line-shaped diode laser. Cells are fabricated with photolithography steps, including deposition of a-Si layers, etching, and annealing. Characterization involves J-V measurements, LBIC, MWPCD, EBSD, and simulations to analyze carrier lifetimes, diffusion lengths, and recombination velocities.
5：Data Analysis Methods:
Data are analyzed using fitting models for LBIC line scans, equations for diffusion lengths and lifetimes, and 2-D simulations to match experimental results with theoretical predictions.
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spectrophotometer
LAMBDA 1050
PerkinElmer
Used for measuring reflection and transmission spectra of samples.
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scanning electron microscope
UltraPlus
Zeiss
Used for electron backscatter diffraction (EBSD) to investigate grain boundary types and orientations.
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EBSD camera
NordlysNano
Oxford Instruments
Attached to the scanning electron microscope for acquiring EBSD maps.
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solar simulator
WXS-156S-L2
Wacom
Used for obtaining current-voltage (J-V) curves under simulated solar conditions.
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four point probe
RM3-AR
Jandel
Used for determining sheet resistance to calculate doping concentration.
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simulation tool
TCAD-Sentaurus
Synopsys
Used for 2-D-device simulations to model and analyze solar cell performance.
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optical simulation software
Genpro4
Used for optical simulations to extract absorption and potential short-circuit current.
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