1：Experimental Design and Method Selection:

The study involved fabricating bottom gate ZnO TFTs using sputter deposition for controlled film properties, functionalizing them with thiol-anchored aptamers for specific tobramycin binding, and characterizing electrical responses to detect tobramycin concentrations. Theoretical models included Schottky diode equations, MOS capacitance-voltage analysis, and Langmuir adsorption isotherm for sensitivity extraction.

2：Sample Selection and Data Sources:

Devices were fabricated on 4-inch p-Si wafers with thermally grown SiO2 dielectric. Tobramycin aptamer and target were purchased from commercial sources (Biosearch Technologies, Inc. and Sigma Aldrich), and all chemicals were used without purification.

3：List of Experimental Equipment and Materials:

Equipment included a Denton Discovery 24 Multi-Cathode Sputter Deposition Platform, EVG 620 Mask Aligner, KLA Tencor P-15 Profiler, Rudolph Auto EL III Ellipsometer, Keithley 4200 Semiconductor Characterization System, and Cascade Microtech EPS150-A1J Probe Station. Materials included ZnO, tungsten (W), APDMES silane, Sulfo-MBS cross linker, tobramycin aptamer, tobramycin target, TRIS buffer, and various solvents.

4：Experimental Procedures and Operational Workflow:

Steps included sputter deposition of ZnO and W, patterning electrodes via wet etching, cleaning devices, silanization with APDMES, cross-linking with Sulfo-MBS, aptamer functionalization, and electrical characterization before and after exposure to tobramycin solutions at concentrations of 1 nM, 10 nM, and 100 nM. Measurements were performed in ambient light with gate voltage sweeps and constant drain voltage.

5：Data Analysis Methods:

Data were analyzed using Schottky diode parameters, MOS CV/GV measurements, extraction of mobility and threshold voltage from transfer curves, and fitting adsorption isotherms to extract detection limits. Statistical averaging was applied to current responses over time.