研究目的
To present a MEMS fabrication process with through-glass vias (TGVs) using laser drilling, overcoming reliability concerns such as debris and via metallization, and demonstrating its suitability for mass production with low cost and simple process.
研究成果
Laser drilling enables reliable TGV formation in glass for MEMS packaging, with good electrical interconnections and vacuum maintenance. The process is simple, low-cost, and suitable for industrial mass production, as demonstrated by stable performance over two years.
研究不足
The drilling process is time-consuming (e.g., 9h 58min for 4874 holes), and hole diameters are limited (minimum 48 μm outlet on 300 μm glass). The method may not be suitable for very high-density interconnections or extremely small via sizes.
1:Experimental Design and Method Selection:
The study used a picosecond laser for drilling TGVs in Pyrex 7740 glass, optimizing parameters like laser power, scanning path, step depth, and step times. Anodic bonding and electron beam evaporation were employed for packaging and metallization.
2:Sample Selection and Data Sources:
Pyrex 7740 glass wafers of 300 μm and 500 μm thickness were used. MEMS devices like gyroscopes and accelerometers were fabricated on SOI wafers.
3:List of Experimental Equipment and Materials:
Equipment includes a picosecond laser (AOPico 532), ICP etcher, electron beam evaporator, 3D microscope, SEM, and B1500A semiconductor parameter analyzer. Materials include Pyrex 7740 glass, SOI wafers, Ti, Au, H2SO4, H2O2, and getter materials.
4:Experimental Procedures and Operational Workflow:
Steps involved laser drilling TGVs, cleaning with H2SO4 and H2O2, anodic bonding to silicon, metal deposition via evaporation, patterning, annealing, and vacuum testing.
5:Data Analysis Methods:
Hole dimensions were measured using microscopy, electrical resistance was measured with B1500A, and vacuum levels were monitored over time.
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picosecond laser
AOPico 532
INNO Laser
Used for drilling through-glass vias (TGVs) in Pyrex 7740 glass with high precision.
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semiconductor parameter analyzer
B1500A
Used for measuring voltage-current characteristics to test electrical resistance and ohmic contact.
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Pyrex 7740 glass
Substrate material for drilling TGVs and bonding in MEMS packaging.
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SOI wafer
Used for fabricating MEMS device structures, such as gyroscopes and accelerometers.
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electron beam evaporator
Used for depositing metal layers (Ti and Au) for electrical interconnections in the TGVs.
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ICP etcher
Used for etching the top silicon layer of SOI wafers to form MEMS structures.
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3D microscope
Used for measuring the profile and dimensions of metal films and via holes.
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SEM
Used for scanning electron microscopy to examine cross-sections of via holes.
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