研究目的
To study the gate reliability of p-GaN gate AlGaN/GaN high electron mobility transistors with a ring-gate structure under gate bias stress, investigating degradation mechanisms and failure points.
研究成果
The p-GaN gate AlGaN/GaN HEMTs exhibit stable performance up to 13 V gate stress, with degradation mechanisms involving hole injection and trapping from the p-GaN layer. Catastrophic failure occurs at stresses above 31 V, characterized by noisy VTH and strong luminescence. The findings provide insights into reliability limits and degradation physics, suggesting areas for device optimization in power applications.
研究不足
The study is conducted at room temperature; effects of temperature variations are not explored. The step-stress method may not fully capture long-term reliability under continuous operation. The simulation models, while comprehensive, rely on assumptions that might not account for all real-world variations.
1：Experimental Design and Method Selection:
Step-stress experiments under gate bias, combined with electroluminescence (EL) imaging and pulsed measurements to monitor degradation. Energy band simulations using Silvaco TCAD for physical mechanism analysis.
2：Sample Selection and Data Sources:
Fabricated p-GaN gate AlGaN/GaN HEMTs with ring-gate structure; devices grown by metal organic chemical vapor deposition on SiC wafer.
3：List of Experimental Equipment and Materials:
High-sensitivity cooled CCD camera for EL imaging, sputtering system for tungsten metal deposition, e-beam evaporator for Ti/Al/Ni/Au contacts, plasma enhanced chemical vapor deposition for Si3N4 passivation, Silvaco TCAD software for simulations.
4：Experimental Procedures and Operational Workflow:
Step-stress from 0 V to 42 V in 0.5 V steps every 120 s with DC measurements between steps; EL measurements during stress; pulsed measurements with 1 μs pulse duration and 100 μs period.
5：5 V steps every 120 s with DC measurements between steps; EL measurements during stress; pulsed measurements with 1 μs pulse duration and 100 μs period. Data Analysis Methods:
5. Data Analysis Methods: Analysis of ID-VG and ID-VD characteristics, threshold voltage (VTH) shifts, and EL signals to correlate with hole injection and trapping mechanisms.
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