1：Experimental Design and Method Selection:

The study uses thermal atomic layer deposition (ALD) to grow AlOxNy films with varying nitrogen concentrations for passivating nano-textured silicon surfaces. Methods include ToF-ERDA for elemental analysis, minority carrier lifetime measurements, and capacitance-voltage measurements to assess passivation quality.

2：Sample Selection and Data Sources:

n-type float zone silicon wafers with resistivity of 3–4 Ω-cm and (100) orientation are used. Flexible wafers of 50 ± 5 μm thickness are prepared using sodium hydroxide solution, and nano-textured surfaces are formed via silver-assisted wet chemical etching.

3：List of Experimental Equipment and Materials:

Equipment includes thermal ALD system (Beneq TFS-200), atomic force microscope (Bruker Dimension Icon), UV-Vis-NIR spectrophotometer (Perkin-Elmer Lambda 1050), ellipsometer (Rudolph AUTO EL III), FTIR spectrometer (Nicolet IS50), ToF-ERDA setup (1.7 MV Pelletron accelerator), lifetime tester (Sinton WT-120TS), and semiconductor characterization system (Keithley 4200). Materials include trimethylaluminum, water, ammonia, nitrogen gas, hydrogen gas, oxygen gas, silver nitrate, HF, H2O2, nitric acid, and aluminum for electrodes.

4：7 MV Pelletron accelerator), lifetime tester (Sinton WT-120TS), and semiconductor characterization system (Keithley 4200). Materials include trimethylaluminum, water, ammonia, nitrogen gas, hydrogen gas, oxygen gas, silver nitrate, HF, H2O2, nitric acid, and aluminum for electrodes. Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: Wafers are thinned and nano-textured. Dielectric films are deposited via ALD at 350°C with specific pulse and purge times. Post-deposition annealing is done in forming gas or N2+O2 ambient at 500°C. Characterization involves AFM, reflectance measurements, ellipsometry, FTIR, ToF-ERDA, lifetime measurements, and C-V measurements on MOS structures.

5：Data Analysis Methods:

Data are analyzed using standard techniques for reflectance, film thickness, elemental composition, minority carrier lifetime, surface recombination velocity, fixed charge density, and defect density. Statistical methods are implied for comparing results across different film types and annealing conditions.