研究目的
To demonstrate the viability of hot-wire chemical vapor deposition (HWCVD) silicon nitride (SiN) for fabricating silicon photonic devices, including straight waveguides, multimode interferometers (MMI), and Mach-Zehnder interferometers (MZI), by characterizing their optical properties and comparing them with plasma enhanced chemical vapor deposition (PECVD) SiN.
研究成果
HWCVD SiN deposited below 400°C is viable for silicon photonics, with propagation losses of 5.7 dB/cm at 1310 nm and 6.1 dB/cm at 1550 nm. Devices like MMIs and MZIs function comparably to PECVD counterparts, though with higher losses due to morphological defects. The lower hydrogen content of HWCVD SiN reduces absorption losses, but scattering from voids limits performance. Future work should focus on minimizing morphological defects to improve losses.
研究不足
The hydrogen concentration and N/Si ratio estimates from FTIR may underestimate Si atoms due to ignored Si-Si bonds, though assumed negligible for near-stoichiometric films. Morphological defects like voids in SiN contribute to scattering losses, and sidewall roughness from etching may add losses. Propagation losses are higher than PECVD SiN, indicating room for optimization in material morphology.
1：Experimental Design and Method Selection:
The study uses HWCVD for low-temperature deposition of SiN layers to fabricate silicon photonic devices. Theoretical modeling with MODE Solutions software guided device design for single-mode propagation and optimal dimensions.
2：Sample Selection and Data Sources:
SiN layers were deposited on SiO2 layers on a 6-inch p-type Si wafer. Devices included straight waveguides, MMIs, and MZIs.
3：List of Experimental Equipment and Materials:
Equipment includes the Echerkon Nitor 301 system for HWCVD, electron beam lithography for patterning, inductive coupled plasma etching system, PECVD for cladding, Woolham M-2000 spectroscopic ellipsometer, FIB-FESEM Zeiss NVision 40, Varian 600 FTIR spectrometer, and optical measurement setup with tunable laser and photodetector.
4：Experimental Procedures and Operational Workflow:
Steps involved depositing SiN at 350°C with specific gas ratios and pressures, defining devices via lithography and etching, depositing SiO2 cladding, and characterizing physical/optical properties using ellipsometry, FIB-FESEM, FTIR, and cutback method for propagation losses.
5：Data Analysis Methods:
FTIR data analyzed using proportionality factors to estimate bond and atomic concentrations; propagation losses determined via linear regression of insertion losses vs. length; device performance evaluated through spectral measurements and simulations.
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Woolham M-2000 spectroscopic ellipsometer
M-2000
Woolham
Used to determine the thickness and refractive index of the SiN layers.
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FIB-FESEM Zeiss NVision 40
NVision 40
Zeiss
Used to inspect the morphology of the films via focused ion beam and field emission scanning electron microscopy.
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Echerkon Nitor 301 system
Nitor 301
Echerkon
Used for hot-wire chemical vapor deposition (HWCVD) of silicon nitride (SiN) layers.
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Varian 600 FTIR spectrometer
600
Varian
Used for Fourier Transform Infrared Spectrometry to ascertain hydrogen concentration in the films.
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MODE Solutions software
Commercial software used for detailed analysis of guided modes and eigenmode expansion simulations to optimize device dimensions.
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Electron beam lithography system
Used to define the optical devices and grating couplers.
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Inductive coupled plasma etching system
Used to transfer patterns to SiN layers with SF6 and CHF3 chemistry.
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PECVD system
Used to deposit SiO2 cladding layers.
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Tunable laser
Part of the optical measurement setup for characterizing device performance.
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Photodetector
Part of the optical measurement setup for detecting light output.
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