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Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates
摘要： Monolithically integrated enhancement/depletion-mode (E/D-mode) GaN-based metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) and inverters, were fabricated on an ultrathin-barrier (UTB) AlGaN/GaN heterostructure grown on Si substrates. By employing a graded AlGaN back barrier in the UTB-AlGaN/GaN heterostructure, a high threshold voltage (VTH) of +3.3 V is achieved in the E-mode MIS-HEMTs. The fabricated MIS-HEMT inverter features a high logic swing voltage of 7.76 V at a supply voltage of 8 V, a small VTH hysteresis as well as deviation less than 0.2 V. The UTB AlGaN/GaN-on-Si technology provides a good platform for integration of MIS-gate-based drivers and power transistors.
关键词： monolithic integration,ultrathin-barrier,GaN,E/D-mode,MIS-HEMT,inverter,AlGaN/GaN heterostructure,Si substrate
更新于2025-09-23 15:22:29
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Growth of AlGaN/GaN Heterostructure With Lattice-matched AlIn(Ga)N Back Barrier
摘要： AlGaN/GaN heterostructures were successfully grown with the AlIn(Ga)N back barrier at 900 ?C. However, the atomic composition of the AlIn(Ga)N layer was strongly dependent on the growth pressure, which resulted in a different lattice constant of the layer. The AlIn(Ga)N back barrier grown at 400 torr was almost lattice matched to the GaN layer. The AlGaN/GaN heterostructures with 10 and 15 nm-thick AlIn(Ga)N back barrier exhibited improved 2-DEG properties, compared to those of the conventional AlGaN/GaN heterostructure without the back barrier. The high electron mobility transistors (HEMTs) fabricated on the AlGaN/GaN heterostructure with a 15 nm-thick AlIn(Ga)N back barrier exhibited a very low off-state leakage current of ~ 2 x 10-7 A/mm which is about 1 order lower in magnitude than the value of the device without the back barrier. The AlIn(Ga)N back barrier is a promising candidate as an alternative to conventional AlGaN and InGaN back barrier.
关键词： HEMT,AlIn(Ga)N back barrier,AlGaN/GaN heterostructure,MOCVD
更新于2025-09-23 15:21:01
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Interface charge engineering in down-scaled AlGaN (<6a??nm)/GaN heterostructure for fabrication of GaN-based power HEMTs and MIS-HEMTs
摘要： The physical mechanism for recovery of 2D electron gas (2DEG) in down-scaled AlGaN/GaN heterostructures with SiNx layers grown by low-pressure chemical vapor deposition (LPCVD) was investigated by means of Hall-effect characterization, scanning Kelvin probe microscopy (SKPM), and self-consistent Poisson–Schr€odinger calculations. Observations using SKPM show that the surface potential of the AlGaN/GaN heterostructure remained nearly unchanged ((cid:2)1.08 eV) as the thickness of the AlGaN barrier was reduced from 18.5 to 5.5 nm and likely originated from the surface pinning effect. This led to a signi?cant depletion of 2DEG from 9.60 (cid:3) 1012 to 1.53 (cid:3) 1012 cm(cid:4)2, as determined by Hall measurements, toward a normally OFF 2DEG channel. Based on a consistent solution of the Schr€odinger–Poisson equations and analytical simulations, approximately 3.50 (cid:3) 1013 cm(cid:4)2 of positive ?xed charges were con?rmed to be induced by a 20-nm LPCVD-SiNx passivation over the AlGaN/GaN heterostructures. The interface charge exerted a strong modulation of band bending in the down-scaled AlGaN/GaN heterostructure, contributing to the ef?cient recovery of 2DEG charge density ((cid:2)1.63 (cid:3) 1013 cm(cid:4)2). E-mode ultrathin-barrier AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors with a low ON-resistance (RON), high ON/OFF current ratio, and steep subthreshold slope were implemented using LPCVD-SiNx passivation.
关键词： AlGaN/GaN heterostructure,power HEMTs,LPCVD-SiNx passivation,2D electron gas,MIS-HEMTs,interface charge engineering
更新于2025-09-23 15:19:57
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Terahertz Spectroscopy of Thermal Radiation from AlGaN/GaN Heterostructure on Sapphire at Low Temperatures
摘要： Terahertz spectroscopy of thermal radiation from electrically pumped AlGaN/GaN structures on sapphire substrate was investigated in this work. Comparison of experimental THz spectroscopy results to theoretical spectra calculations shows that thermal radiation of the sample lattice is the main mechanism causing the emission above T = 155 K, and it is mainly influenced by sapphire substrate. Here, the emission was attributed to the radiative electron transitions in shallow impurities and nitrogen vacancies as well as to radiative decay of longitudinal optical phonons (387 cm?1) in sapphire substrate. We have successfully demonstrated that THz emission spectroscopy can be used to define the temperature at which thermal emission from AlGaN/GaN HEMT structures dominates the emission spectrum.
关键词： terahertz spectroscopy,AlGaN/GaN heterostructure,electroluminescence,thermal radiation
更新于2025-09-23 15:19:57
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[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - High Responsivity and Low Dark Current Ultraviolet Photodetectors Using p-GaN/AlGaN/GaN Heterostructure
摘要： This paper reports a p-GaN/AlGaN/GaN heterostructure photodetector (PD) with high responsivity and high photo-to-dark current ratio (Iph/Idark). Due to the inherent depletion of the 2-D electron gas in the heterostructure by the p-type GaN, the dark current of the PD is significantly suppressed without compromising the advantages of high photocurrent and responsivity in AlGaN/GaN heterostructure PDs. As a result, both a large responsivity of 2×104 A/W and a high Iph/Idark of 107 at a bias of 5 V were achieved in our device under UV light with a wavelength of 365 nm and intensity of 5 μW/mm2. Moreover, a large UV to visible rejection ratio of around 3000 was also observed in the device. The superior device performance in our work compared to other reported results suggests the great potential using the p-GaN/AlGaN/GaN heterostructure based PDs for high-sensitivity UV detection.
关键词： p-GaN,AlGaN/GaN heterostructure,UV photodectors
更新于2025-09-11 14:15:04
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Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating
摘要： This paper demonstrates a method to reduce the decay time in AlGaN/GaN photodetectors by pulsed heating mode. A suspended AlGaN/GaN heterostructure photodetector integrated with micro-heater is fabricated and characterized under ultraviolet illumination. We have observed that the course of persistent photoconductivity (PPC) was effectively accelerated by applying pulsed heating. The decay time is significantly reduced from 175 s by DC heating to 116 s by 50 Hz pulsed heating at the same power (280 mW). With the same pulse duty cycle and 50 Hz pulsed heating frequency, a reduction of 30-45 % in decay time is measured compared to DC heating.
关键词： pulsed heating,persistent photoconductivity,decay time,AlGaN/GaN heterostructure,photodetectors
更新于2025-09-11 14:15:04
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Generation and Thermal Properties of a Dual-Transverse-Mode With Dual-Polarization and Dual-Frequency by a Dual-Medium Microchip Laser
摘要： An AlGaN/GaN lateral reverse blocking current regulating diode (RB-CRD) with trench Schottky anode and hybrid trench cathode has been proposed and experimentally demonstrated on silicon substrate. The Schottky barrier diode (SBD) integrated in the anode exhibits a turn-on voltage of 0.7 V and a reverse breakdown voltage of 260 V. The hybrid trench cathode acts as a CRD, which is in series connection with the anode SBD. A knee voltage of 1.3 V and a forward operation voltage beyond 200 V can be achieved for the RB-CRD. The RB-CRD is capable of outputting an excellent steady current in a wide temperature range from 25 to 300 °C. In addition, the forward regulating current exhibits small negative temperature coefficients less than ? 0.152%/oC.
关键词： Reverse blocking current regulating diode (RB-CRD),AlGaN/GaN heterostructure,Schottky barrier diode (SBD)
更新于2025-09-11 14:15:04
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Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure
摘要： Terahertz radiation emission from an electrically excited AlGaN/GaN heterostructure with a surface metal grating was studied under conditions of two-dimensional (2D) electron heating by the lateral electric field. Intensive peaks related to nonequilibrium 2D plasmons were revealed in the terahertz emission spectra with up to 4 times selective amplification of the radiation emission in the vicinity of 2D plasmon resonance. This selective emission was shown to be frequency-controllable by the grating period. Exact spectral positions of the 2D plasmon resonances were preliminarily experimentally detected with the help of equilibrium transmission spectra measured at various temperatures. The resonance positions are in a satisfactory agreement with the results of theoretical simulation of the transmission spectra performed using a rigorous solution of Maxwell’s equations. The effective temperature of hot 2D electrons was determined by means of I–V characteristics and their analysis using the power balance equation. It was shown that for a given electric field, the effective temperature of nonequilibrium 2D plasmons is close to the hot 2D electron temperature. The work may have applications in GaN-based electrically pumped emitters of terahertz radiation.
关键词： electrical excitation,terahertz radiation,metal grating,AlGaN/GaN heterostructure,2D plasmons
更新于2025-09-11 14:15:04