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Rapid synthesis of AlON powders by low temperature solid-state reaction
摘要： High synthesis temperatures and long soaking times are generally required to fabricate AlON powders, which can cause coarsening and aggregation of the powder. Solid-state reaction methods form AlON powders by a direct reaction of Al2O3 and AlN, enabling rapid synthesis of AlON powder at low temperatures. In this work, single phase AlON powders were fabricated by a solid-state reaction method using Al2O3 and AlN powders as raw materials. To lower the synthesis temperature and shorten the soaking time, the raw materials particle sizes and the homogeneity of the Al2O3/AlN mixture were investigated. The effects of AlN content, synthesis temperature, and soaking time on the synthesis of AlON powders were examined. When the AlN content was 27 mol %, single phase AlON powders were synthesized by calcining Al2O3/AlN mixture at 1680 °C for 20 min. After ball-milling at 250 rpm for 24 h, the synthesized AlON powder was ground into a single phase fine AlON powder with an average particle diameter of 320 nm, a narrow size distribution, and good dispersibility. Transparent AlON ceramics with dimensions of Φ100 mm × 1 mm were fabricated by pressureless sintering the produced fine AlON powder.
关键词： B.Grain size,Aluminum oxynitride,A. Powders: solid-state reaction
更新于2025-11-19 16:56:35
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Thermal atomic layer deposition of AlOxNy thin films for surface passivation of nano-textured flexible silicon
摘要： Aluminum oxynitride (AlOxNy) films with different nitrogen concentration are prepared by thermal atomic layer deposition (ALD) for flexible nano-textured silicon (NT-Si) surface passivation. The AlOxNy films are shown to exhibit a homogeneous nitrogen-doping profile and the presence of an adequate amount of hydrogen, which is investigated by Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA). The effective minority carrier lifetimes are measured after the NT-Si surface passivation; the minimum surface recombination velocity (SRV) of 5 cm-s-1 is achieved with the AlOxNy film in comparison to the Al2O3 and AlN films (SRV of 7–9 cm-s-1). The better SRV with AlOxNy film is due to the collective effect of field-effect passivation by the presence of fixed negative charges, and chemical passivation by the presence of hydrogen within the film. The capacitance-voltage, and conductance measurements also are carried out using metal-oxide-semiconductor structure to determine the fixed negative charge density (Nf,ox), and defect density of states (Dit) in the AlOxNy films. The better surface passivation is attributed to unusually large Nf,ox of ~6.07 × 1012 cm-2, and minimal Dit of ~1.01 × 1011 cm-2-eV-1 owing to the saturation of Si dangling bonds by the hydrogen within the AlOxNy film matrix after the annealing step.
关键词： Surface passivation,Time-of-flight elastic recoil detection analysis (ToF-ERDA),Aluminum oxynitride,Thermal atomic layer deposition,Black flexible silicon
更新于2025-10-22 19:40:53
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Study of optical and structural properties of sputtered aluminum nitride films with controlled oxygen content to fabricate Distributed Bragg Reflectors for ultraviolet A
摘要： Aluminum nitride (AlN) films with controlled oxygen content were deposited on silicon substrates, and optical properties studied with dependency on film morphology. Combinations of argon (Ar) and nitrogen (N2) gases were used in RF magnetron sputtering of an AlN target. The resulting refractive index ranging from 1.6 to 2.0 at 400 nm was tuned by controlling the sputter gas flow rate ratio of Ar and N2. The resulting refractive index is associated with density and aluminum nitride content of the thin films. Distributed Bragg Reflectors (DBRs) optimized for ultraviolet-A reflectivity were fabricated with pairs of alternating AlN thin films using an explicit combination of low-n and high-n to further investigate the thin film optical properties. The effect of structural transformation in the DBR stack on the progress of optical properties was studied. The DBRs exhibit a negligible extinction coefficient, utilizing precise control of oxygen incorporation with one sputtering target.
关键词： Optical properties,Materials interface,Aluminum oxynitride,Aluminum nitride,AlN,Refractive index,DBR,Magnetron sputtering
更新于2025-09-16 10:30:52