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Cryo-focused ion beam preparation of perovskite based solar cells for atom probe tomography
摘要： Focused-ion beam lift-out and annular milling is the most common method used for obtaining site specific specimens for atom probe tomography (APT) experiments and transmission electron microscopy. However, one of the main limitations of this technique comes from the structural damage as well as chemical degradation caused by the beam of high-energy ions. These aspects are especially critical in highly-sensitive specimens. In this regard, ion beam milling under cryogenic conditions has been an established technique for damage mitigation. Here, we implement a cryo-focused ion beam approach to prepare specimens for APT measurements from a quadruple cation perovskite-based solar cell device with 19.7% efficiency. As opposed to room temperature FIB milling we found that cryo-milling considerably improved APT results in terms of yield and composition measurement, i.e. halide loss, both related to less defects within the APT specimen. Based on our approach we discuss the prospects of reliable atom probe measurements of perovskite based solar cell materials. An insight into the field evaporation behavior of the organic-inorganic molecules that compose the perovskite material is also given with the aim of expanding the applicability of APT experiments towards nano-characterization of complex organo-metal materials.
关键词： field evaporation,solar cells,APT,atom probe tomography,FIB,cryo-focused ion beam,perovskite,halide loss
更新于2025-09-16 10:30:52
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Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication
摘要： We demonstrate efficient, polarized and monolithic white semipolar (20–21) InGaN light-emitting diodes (LEDs) grown on high crystal quality 4-inch (20–21) GaN/sapphire template. Materials growth by metal-organic chemical vapor deposition (MOCVD) and characterization by atom probe tomography (APT) were carried out. The fabricated regular 0.1 mm2 size LEDs show a high electrical performance with an output power of 3.9 mW at 100 mA, an emission spectrum with two peaks located at 445 nm and 565 nm, a CIE point of (0.37, 0.42) and a polarization ratio of 0.30, which make them promising candidates for backlighting in liquid crystal displays (LCDs) application. Moreover, the fabricated square phosphor-free white μLED with size ranging from 20 to 60 μm, exhibit a high 3 dB modulation bandwidth of 660 MHz in the visible light communication (VLC) system, which benefits from the shorter carrier lifetime grown on the semipolar (20–21) plane. To our best knowledge, this is the first demonstration of monolithic white semipolar μLEDs in the VLC application, which can overcome the limitation of the slow frequency response of yellow phosphors converted commercial white LEDs. These results demonstrate the huge potentials to produce high efficiency monolithic white semipolar InGaN LEDs on cost-effective large area sapphire substrates.
关键词： Polarization,Light-emitting diodes,Atom probe tomography,Semipolar GaN,Visible light communication
更新于2025-09-12 10:27:22
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Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates
摘要： Achieving efficient p-type conduction in Mg-implanted GaN depends largely on postimplantation annealing conditions. Here, we study the effect of postimplantation annealing on the evolution of defects and their interactions with implanted Mg ions by using scanning transmission electron microscopy and atom probe tomography. We found that Mg clusters start to form by annealing the implanted sample above 1000 °C. In addition to the Mg clusters, stacking faults form at an annealing temperature of 1300 °C. The Mg concentrations of about 2–3 orders of magnitude higher than implanted Mg were segregated at the stacking faults. Nanobeam electron diffraction analysis revealed no distinct phase other than GaN formed at the Mg-enriched defects, suggesting that Mg is substituted for Ga in the GaN lattice at the edge of the stacking faults.
关键词： stacking faults,Mg clusters,postimplantation annealing,scanning transmission electron microscopy,Mg-implanted GaN,atom probe tomography
更新于2025-09-12 10:27:22
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Influence of heat treatment under hot isostatic pressing (HIP) on microstructure of intermetallic-reinforced tool steel manufactured by laser powder bed fusion
摘要： Microstructure and properties of as-built laser powder bed fusion (LPBF) steels differ from the conventional ones, and they may contain some porosity and lack of fusion. Therefore, post-treatments, including hot isostatic pressing (HIP), are used to densify the material, and tailor the properties of the final product. Usually, HIP is performed as an operation separate from heat treatment. In the present investigation a new approach was used, in which the whole cycle of the heat treatment was carried out in HIP under pressure, and the influence of HIP on microstructure of an advanced stainless maraging tool steel manufactured by LPBF was investigated. For a comparison, a conventional steel grade of the same chemical composition, after a heat treatment at the same temperature-time conditions, was also characterized. The microstructure of the steel was investigated by means of advanced microscopy and atom probe tomography. The influence of the manufacturing route, heat treatment and HIP on microstructure, austenitic phase fraction and size distribution of precipitates was investigated, and the role of high pressure in stabilization of austenite in the microstructure was discussed. It was concluded that since HIP influences phase transformations, a fundamental understanding of the influence of HIP on microstructure is necessary, and development of new post processing regimes guaranteeing the best performance of the material is required.
关键词： Hot isostatic pressing (HIP),Atom probe tomography,Transmission electron microscopy,Maraging steel,Precipitation hardening,Laser powder bed fusion
更新于2025-09-11 14:15:04
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European Microscopy Congress 2016: Proceedings || Factors limiting the doping efficiency in atomic layer deposited ZnO:Al thin films: a dopant distribution study by transmission electron microscopy and atom probe tomography
摘要： Transparent conducting oxides (TCOs), such as indium tin oxide (ITO), are commonly used as transparent electrodes in a wide variety of devices, such as in displays and solar cells. ZnO has been reported to be a promising alternative TCO for ITO, because of its lower cost. As the conductivity of intrinsic ZnO films is too low for the applications in mind, doping the ZnO film is essential, the most common dopant being Al. Atomic layer deposition (ALD) is an emerging technique for the deposition of doped ZnO thin films, allowing for accurate thickness control and excellent conformality on high aspect ratio topologies. Due to the self-limiting half-reactions and cyclic nature of the ALD process, not only the aforementioned characteristics can be met, but also the amount and distribution of dopants can be controlled by selecting the precursors (i.e. the Zn or Al precursors) for each individual half-cycle. However, thus far, the maximum conductivity that can be obtained in Al-doped ZnO (ZnO:Al) thin films prepared by ALD appears to be limited by the low doping efficiency of Al. To better understand the origin of this limitation, the 3-dimensional distribution of Al atoms in ZnO films has been examined using a combination of Transmission Electron Microscopy (TEM) and Atom Probe Tomography (APT). For this study, three ZnO:Al films with different Al:Zn ratios were grown sequentially in one film stack, and capped and separated by intrinsic ZnO films. A diagram of the stack is shown in Fig. 1a. This geometry allowed a single APT or TEM measurement to collect data on all three doped films, keeping the analytical conditions identical. BFTEM studies (Fig 1b) showed that for high Al concentrations the ZnO grains are interrupted, while they continue across the lower doped layers. Scanning TEM – High Angle Annular Dark Field (HAADF) imaging and 2-D EDX mappings allows for revealing the aluminum distribution as a function of film depth, showing that the Al-doped layers follow the surface topography of the ZnO grains during growth Fig. 1c,d. However, TEM is limited in providing 3-D dopant distributions, on the one hand because of the limited sensitivity of EDX, on the other hand because of the projection of rough interfaces in a 2-D image. The latter is illustrated in Fig. 2a: individual Al-doped layers can clearly be discerned for larger interspacings, but are poorly recognizable in layer ‘AZO-3’. One-dimensional depth profiles extracted from cylindrical sub-volumes of the 3D APT data (Fig. 2 b) are presented in Fig. 2c. These 1D profiles show that the peaks in Al concentration are no δ-functions, as might be expected from the binary nature of the ALD process. Instead, the peaks have a full width at half maximum (FWHM) of ~2 nm. The 3-dimensional dopant distribution can be used to explain the dependencies of resistivity and doping efficiency on growth recipes used. When the local Al density is too high, the doping efficiency is limited by two proposed limiting factors: the solid solubility limit of Al atoms in a ZnO matrix and the disorder-induced carrier localization.
关键词： atom probe tomography,atomic layer deposition,transparent conducting oxides
更新于2025-09-04 15:30:14