研究目的
Investigating the effect of postimplantation annealing on the evolution of defects and their interactions with implanted Mg ions in GaN layers.
研究成果
Postimplantation annealing above 1000 °C leads to the formation of Mg clusters in Mg-implanted GaN layers, with significant Mg segregation at stacking faults formed at 1300 °C. The findings suggest that Mg substitutes for Ga in the GaN lattice at the edge of stacking faults, impacting the electrical properties of p-type GaN.
研究不足
The study focuses on Mg-implanted GaN layers and may not directly apply to other doping methods or materials. The analysis is limited to the effects of annealing up to 1300 °C.
1：Experimental Design and Method Selection:
The study used scanning transmission electron microscopy (STEM) and atom probe tomography (APT) to analyze the microstructure and Mg distribution in Mg-implanted GaN layers annealed at various temperatures.
2：Sample Selection and Data Sources:
A 10 μm-thick n-type GaN layer was grown homoepitaxially on c-axis oriented free-standing n-GaN substrates. Mg ion-implantation was carried out to achieve a 500 nm-deep box profile.
3：List of Experimental Equipment and Materials:
Aberration-corrected STEM (FEI Titan G2 80-200), Local Electrode Atom Probe (CAMECA LEAP 5000XS), focused ion beam (FIB) system (Helios G4UX Dual Beam).
4：Experimental Procedures and Operational Workflow:
Samples were annealed at 1000 °C, 1100 °C, 1200 °C, and 1300 °C. STEM and APT analyses were performed to observe defects and Mg distribution.
5：Data Analysis Methods:
Visualization and Analysis Software (IVAS version 3.8.2) was used for APT data analysis. Frequency distribution analysis was performed to assess Mg clustering.
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