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Near-ultraviolet Raman and micro-Raman analysis of electronic materials
摘要： Raman and micro-Raman analysis methods have been extensively investigated for the study of materials used in electronic and photonic devices. Raman studies are used to understand fundamental phonon properties, along with effects related to the crystal structure, disorder, doping, and external factors such as temperature and stress. Micro-Raman extends these investigations to the micron scale. This article reviews diverse benefits of Raman measurements when carried out using laser excitation in the near-ultraviolet wavelength range, nominally 400 to 325 nm. Micro-Raman methods in the near ultraviolet exploit the key advantage of reduced focal spot size, achievable at shorter wavelengths when using diffraction-limited optics, for mapping with high spatial resolution. There are distinct advantages common to Raman and micro-Raman spectroscopy in the near ultraviolet when compared to the widely used visible excitation. One advantage exploits the shallower optical penetration depth in select materials for probing near-surface regions or interfaces. A second advantage is related to tuning of the excitation photon energy relative to the electronic levels of a material for investigating resonance effects. Finally, the application of Raman scattering to materials which exhibit strong fluorescence requires tuning to a wavelength range away from the potentially obscuring emission. This article overviews several examples of these key advantages to study diverse applied physics problems in electronic and photonic materials. Topics covered include stress mapping in silicon and related materials, stress and thermal effects in gallium nitride and other group-III-nitride semiconductors, and carbon materials ranging from graphite and graphene to diamond grown using chemical vapor deposition. The fundamental effects of stress- and temperature-induced shifts in phonon energies and their application to study epitaxy and device-related effects are also briefly reviewed.
关键词： near-ultraviolet,stress mapping,carbon materials,chemical vapor deposition,phonon properties,Raman spectroscopy,electronic materials,micro-Raman,gallium nitride
更新于2025-09-23 15:21:01
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Selective growth of monolayer semiconductors for diverse synaptic junctions
摘要： The information computation through synapse networks in the brain plays a vital role for cognitive behaviors such as image/video recognition, self-learning, and decision-making. Achieving proper synaptic networks by conventional semiconductor and memristive devices has encountered critical issues such as the spatial density requiring a number of transistors for one synapse, reliable filament formation in memristors, or emulating diverse excitatory and inhibitory synaptic plasticity with two-terminal device geometry. Here, we report selective growth of variously doped MoS2 with controllable conductance plasticity, which can be used for emulating diverse synaptic junctions. The conductance plasticity in the monolayer MoS2 was found to originate from resistive-heating near the junctions with electrodes in the two-terminal device geometry and the carrier-concentration-dependent metal-insulator transition in the MoS2 channel. A spatiotemporal synaptic summation is demonstrated where the firing of a proper postsynaptic membrane potential can be designed for cognitive processes. Compared with previously reported three terminal synaptic devices with atomically thin materials, our two-terminal devices with flexible synaptic strengths have advantages for integrating three-dimensional neuronal networks. This provides a new insight on two-dimensional materials as a promising arena for integrated synaptic functionalities in artificial neural networks.
关键词： chemical vapor deposition,metal-insulator transition,defects engineering,two dimensional materials,synaptic junction
更新于2025-09-23 15:21:01
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Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga<sub>2</sub>O<sub>3</sub> thin films fabricated by mist chemical vapor deposition
摘要： Single-crystal thin films of gallium oxide (Ga2O3), an ultra-wide bandgap semiconductor, were fabricated on c-plane sapphire by mist chemical vapor deposition (mist CVD). The grown ?-Ga2O3 thin films had low surface roughness, and we characterized their initial crystal growth phase by using atomic force microscopy and X-ray diffraction. By varying the precursor concentration, we changed the surface roughness and crystallinity of the thin films. The lattice constants of the ?-Ga2O3 thin films almost matched those of the single crystal in the initial growth phase. We also found that these thin films grew hetero-epitaxially. Finally, mist CVD might have a very short incubation time in this system.
关键词： Gallium oxide,Surface morphology,Crystallinity,Precursor concentration,Mist chemical vapor deposition,Epitaxial growth,Wide bandgap semiconductors
更新于2025-09-23 15:21:01
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Strong Quantum Confinement Effects in Nanometer Devices with Graphene Directly Grown on Insulator by Catalyst-free Chemical Vapor Deposition
摘要： Background: The understanding of electrical properties of defective graphene in nanometer regime has lagged behind. Objective: This report intends to characterize defective but practically useful graphene as nanometer devices. Method: A-few-layer-thick graphene was directly grown on SiO2 substrate by alcohol-chemical vapor deposition (alcohol-CVD) using ethanol as carbon source and without the use of any catalytic metal. The graphene film was delineated into nanometer structures by electron beam lithography to make the nanoscale devices. Results: The Raman spectra of the graphene sheet on SiO2 shows relatively large D peak, which means the graphene is defective and consists of nanograins with an estimated size of 17 nm. Modulation of the graphene resistance by the gate voltage Vg was studied at room temperature. The film shows only p-type conduction, with a sheet resistance of 3.7 kΩ/□ and field-effect mobility calculated to be 44 cm2/Vs. From the temperature dependence of the graphene sheet, it is found that the resistance increases only by 7% from room temperature to 10 K, indicating low potential barrier between the domains, even though the graphene film is as thin as 1.6 nm and defective. From the conductance (Id/Vd) contour plot measured at 10 K of these nanodevices, aperiodic Coulomb-blockade feature and transport with a large gap were observed. Conclusion: Correlation among narrowest constriction widths, the variation of the addition energies and transport gaps in disordered graphene nanostructures is evident. These graphene nanodevices may have promising application in various nanodevices like single-electron (or single-hole) transistor, single-molecule transistor, van-der-Waals stacked nanodevices, etc.
关键词： graphene nanometer devices,Graphene nanostructures,sheet resistance,Raman spectra,Coulomb blockade,alcohol chemical vapor deposition,electron beam lithography
更新于2025-09-23 15:21:01
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Enhancement for Potential-Induced Degradation Resistance of Crystalline Silicon Solar Cells via Anti-Reflection Coating by Industrial PECVD Methods
摘要： The issue of potential-induced degradation (PID) has gained more concerns due to causing the catastrophic failures in photovoltaic (PV) modules. One of the approaches to diminish PID is to modify the anti-re?ection coating (ARC) layer upon the front surface of crystalline silicon solar cells. Here, we focus on the modi?cation of ARC ?lms to realize PID-free step-by-step through three delicate experiments. Firstly, the ARC ?lms deposited by direct plasma enhanced chemical vapor deposition (PECVD) and by indirect PECVD were investigated. The results showed that the ef?ciency degradation of solar cells by indirect PECVD method is up to ?33.82%, which is out of the IEC 62804 standard and is signi?cantly more severe than by the direct PECVD method (?0.82%). Next, the performance of PID-resist for the solar cell via indirect PECVD was improved signi?cantly (PID reduced from ?31.82% to ?2.79%) by a pre-oxidation step, which not only meets the standard but also has higher throughput than direct PECVD. Lastly, we applied a novel PECVD technology, called the pulsed-plasma (PP) PECVD method, to deal with the PID issue. The results of the HF-etching rate test and FTIR measurement indicated the ?lms deposited by PP PECVD have higher potential against PID in consideration of less oxygen content in this ?lm. That demonstrated the ?lm properties were changed by applied a new control of freedom, i.e., PP method. In addition, the 96 h PID result of the integrated PP method was only ?2.07%, which was comparable to that of the integrated traditional CP method. In summary, we proposed three effective or potential approaches to eliminate the PID issue, and all approaches satis?ed the IEC 62804 standard of less than 5% power loss in PV modules.
关键词： solar cell,potential-induced degradation,anti-re?ection coating,plasma enhanced chemical vapor deposition
更新于2025-09-23 15:21:01
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Epitaxial lateral overgrowth of GaN on nano-cavity patterned sapphire substrates
摘要： The epitaxial lateral overgrowth of GaN by metal-organic chemical vapor deposition using a nano-cavity patterned sapphire substrate (NCPSS) was investigated. The NCPSS, with a hexagonal non-close-packed nano-cavity pattern on the sapphire substrate, was fabricated by polystyrene sphere coating and size reduction by reactive ion etching, followed by deposition of alumina and thermal oxidation. The coalescence of GaN on the NCPSS was achieved by the formation of relatively large GaN islands and enhanced lateral overgrowth of the GaN islands over several nano-cavity pattern areas. The threading dislocation density (TDD) measured by cathodoluminescence measurement was significantly reduced from 2.4 108 cm-2 to 6.9 107 cm-2 by using the NCPSS. Dislocation behaviors that contribute to the reduction of TDD of the GaN layer were observed by transmission electron microscopy. Raman spectroscopy revealed that the compressive stress in the GaN layer was reduced by 21% due to the embedded nano-cavities. In addition, the diffuse reflectance of GaN on the NCPSS was enhanced by 54% ~ 62%, which is attributed to the increased probability of light extraction through effective light scattering by nano-cavities.
关键词： A1. Nanostructures,B1. Nitrides,A2. Single crystal growth,A3. Metalorganic chemical vapor deposition,A3. Nanoscale epitaxial lateral overgrowth
更新于2025-09-23 15:21:01
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One-step synthesis of nitrogen-doped graphene from a sole aromatic precursor
摘要： A cheap aromatic precursor (1,10-phenanthroline) with heteroatom and planar-structure was designed to synthesize large-scale, continuous and mostly single-layer nitrogen-doped graphene (NG) films by one-step chemical vapor deposition method. The NG sheets can be obtained even at 600 ℃. The results indicated that the content and type of doped N are intensely relied on the growth temperature. Our fabrication approach provides an economic synthetic route and potentially promotes the practical application of graphene-based materials.
关键词： chemical vapor deposition,thin films,graphene,nitrogen-doped
更新于2025-09-23 15:21:01
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Controlled Growth of Vertically Oriented Trilayer MoS <sub/>2</sub> Nanoflakes for Rooma??Temperature NO <sub/>2</sub> Gas Sensor Applications
摘要： In present work, we introduce the controlled synthesis of few layer vertically oriented MoS2 flakes for high performance NO2 gas sensor applications. The density and the thickness of MoS2 nanosheets are controlled by varying the heating rate of the chemical vapor deposition process. Our study confirms that the nanoflakes of about three layers were obtained under the heating rate of 5 oC by using powders of MoO3 and S as precursors without using any catalyst. This is very advantageous because no catalyst was used, there was no need of buffer layer at the bottom of the MoS2 thin film flacks, thus omitting the leakage current when measuring the electrical signal and enhancing the gas sensing performance. Gas sensing measurements demonstrated that the interconnected vertically oriented MoS2 nanoflakes have a good response value of 20.1% to 0.5 ppm NO2 at RT, and 1.73% at 150 oC. The sensor showed full recovery characteristic at a measured temperature of 150 oC with response and recovery time of about 15 s, and 100 s, respectively. The sensor also exhibited good selectivity with the ignorable response to SO2, H2, NH3, H2S and a low detection limit of 42 ppb.
关键词： Few-layer MoS2,Gas sensors,Chemical vapor deposition,Vertically oriented
更新于2025-09-23 15:19:57
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Chemical vapor deposition all-inorganic CsPbI <sub/>2</sub> Br perovskite nanofibers for photodetector
摘要： Chemical vapor deposition method can prepare perovskite films with controllable morphology and adjustable photoelectric properties. In this work, we have prepared CsPbI2Br films at 400 °C–700 °C using chemical vapor deposition method. The grain size of perovskite film increases with the deposition temperature increment because higher temperature provides greater driving force for nucleation expansion. CsPbI2Br film deposited at 600 °C shows nanofiber structure with polycrystalline property accompanied by local single crystal structure. Steady-state and time-resolved fluorescence measurement explored the charge carrier recombination process of perovskite films. The photodetector based on CsPbI2Br film deposited at 600 °C shows excellent photoelectric response and switching ratio characteristics. This is ascribed to low defect density and fast charge transport along 1D fiber channels.
关键词： photodetector,perovskite,chemical vapor deposition,nanofibers
更新于2025-09-23 15:19:57
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High performance Zn-diffused planar mid-wavelength infrared type-II InAs/InAs <sub/>1a??x</sub> Sb <sub/>x</sub> superlattice photodetector by MOCVD
摘要： We report a Zn-diffused planar mid-wavelength infrared photodetector based on type-II InAs/InAs1?xSbx superlattices. Both the superlattice growth and Zn diffusion were performed in a metal-organic chemical vapor deposition system. At 77 K, the photodetector exhibits a peak responsivity of 0.70 A/W at 3.65 μm, corresponding to a quantum efficiency of 24% at zero bias without anti-reflection coating, with a 50% cutoff wavelength of 4.28 μm. With an R0A value of 3.2 × 105 Ω cm2 and a dark current density of 9.6 × 10?8 A/cm2 under an applied bias of ?20 mV at 77 K, the photodetector exhibits a specific detectivity of 2.9 × 1012 cm Hz1/2/W. At 150 K, the photodetector exhibits a dark current density of 9.1 × 10?6 A/cm2 and a quantum efficiency of 25%, resulting in a detectivity of 3.4 × 1011 cm Hz1/2/W.
关键词： specific detectivity,metal-organic chemical vapor deposition,type-II InAs/InAs1?xSbx superlattices,quantum efficiency,Zn-diffused planar mid-wavelength infrared photodetector
更新于2025-09-23 15:19:57