研究目的
To investigate how the precursor concentration and growth time influence the surface roughness and crystallinity of ?-Ga2O3 thin films fabricated by mist CVD.
研究成果
?-Ga2O3 thin films with high crystallinity and low surface roughness were fabricated using mist CVD. The films grew hetero-epitaxially on c-plane sapphire substrates, with lattice constants matching those of single-crystal ?-Ga2O3. The incubation time of mist CVD was found to be very short, suggesting potential for easy and inexpensive production of high-quality thin films.
研究不足
The detailed mechanisms of mist CVD remain unknown. The study suggests further investigation is needed to understand the fabrication conditions necessary for high crystallinity thin films.
1：Experimental Design and Method Selection:
Custom mist CVD system was used to deposit ?-Ga2O3 thin films on c-plane sapphire substrates. The influence of precursor concentration and growth time on film properties was studied.
2：Sample Selection and Data Sources:
c-plane sapphire substrates were cleaned and used for film deposition.
3：List of Experimental Equipment and Materials:
Atomic force microscope (AFM), X-ray diffraction (XRD) equipment, gallium acetylacetonate precursor, ultra-pure water, hydrochloric acid, hydrogen peroxide.
4：Experimental Procedures and Operational Workflow:
Films were deposited at 400°C with varying precursor concentrations and growth times. Surface morphology and crystallinity were characterized using AFM and XRD.
5：Data Analysis Methods:
Film thickness was estimated from Laue fringes in XRD results. Surface roughness was measured using AFM.
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