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Optimization of SnO2-based electron-selective contacts for Si/PEDOT:PSS heterojunction solar cells
摘要： Tin oxide (SnO2) is a potentially excellent electron-selective contact (ESC) for silicon (Si)-based solar cells due to its satisfactory energy band structure and good crystallinity. However, unsatisfactory electron extraction ability and limited surface passivating effect of SnO2 ESCs will limit the performance of corresponding solar cells. We increase the Fermi level of SnO2 by doping Ethylene diamine tetraacetic acid (EDTA), which endows EDTA-SnO2 better electron extraction ability than SnO2. Moreover, EDTA-SnO2/SiOx bilayer ESC prepared by combining a EDTA-SnO2 layer and a thin silicon oxide (SiOx) film provides better surface passivation than EDTA-SnO2 ESC without impairing the charge transport capability markedly. The planar Si/PEDOT:PSS heterojunction solar cells (HSCs) with EDTA-SnO2/SiOx bilayer ESCs exhibit a power conversion efficiency (η) of 11.52%, which improves 13.7% in comparison with the η (10.13%) of HSCs with SnO2 ESCs, mainly caused by the increase in Voc and FF by 18 mV and 5.4% respectively.
关键词： Tin oxide,Electron-selective contact,Surface passivation,Silicon heterojunction solar cells,Fermi level
更新于2025-09-16 10:30:52
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Interlayer Engineering for Flexible Large-Area Planar Perovskite Solar Cells
摘要： Hybrid metal halide perovskite solar cells (PSCs) have consistently demonstrated high power conversion efficiency (PCE), although the best performing PSCs mostly employ high-temperature (500 oC) processed compact and mesoporous TiO2. Instead, low-temperature processed PSCs are desirable for implementation on flexible substrates and tandem solar cells. Here, we present a new method to achieve high efficiency flexible planar PSCs based on a low-temperature processed nonaqueous sol-gel route synthesized TiO2 and a guanidinium iodide (GuaI) salt passivation treatment of the perovskite film. We fabricate both rigid and flexible triple-cation perovskite (Cs0.05 (MA0.17FA0.83)0.95Pb(I0.85Br0.15)3, Eg ~1.58 eV) PSCs, achieving PCEs of 19.8% and 17.0% on glass and polyethylene naphtholate, (PEN) substrates respectively. At the same time, rigid and flexible high-bandgap double cation (FA0.85Cs0.15Pb(I0.7Br0.3)3, Eg ~1.72 eV) PSCs reached a PCE of 18.0 % and of 15.8%. Moreover, large area (1cm2) ~1.58 eV and ~1.72 eV-PSCs achieved PCEs of 18.2% and 16.7% PCE on glass substrates and of 16.2% and 13.9% on PEN substrates demonstrating the high uniformity of all the solar cell layers.
关键词： Solar Cells,Flexible,Guanidinium Iodide Passivation,Perovskite,Low Temperature TiO2
更新于2025-09-16 10:30:52
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Device Structure and Passivation Options for the Integration of Scaled IGZO TFTs
摘要： The focus of this work is on the performance dependence of scaled the device structure and IGZO TFTs with variations semiconductor passivation scheme. TCAD simulation was used to provide insight on the details which establish the limits on electrostatic control. Dielectrics used for the gate and back-channel regions have been adjusted to overcome short-channel effects, along with required modifications in process recipes for PECVD passivation layers, oxygen ambient annealing, and ALD capping material. Scaled devices with channel lengths as small as L = 1 μm have been investigated and evaluated by the electrostatic behavior, and stability when subjected to thermal and bias stress. An optimized process and associated procedural details for scaled devices is presented, along with suggested options for further channel length reduction to submicron dimensions.
关键词： IGZO TFTs,scaling,TCAD simulation,electrostatic control,PECVD,short-channel effects,ALD,thermal stability,bias stress,passivation
更新于2025-09-16 10:30:52
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[IEEE 2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - Kyoto, Japan (2019.7.2-2019.7.5)] 2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - Challenges and prospects of very thin (<50 μm) crystalline silicon solar cells
摘要： Thin crystalline silicon (c-Si) solar cells are highly attractive not only for reducing the material cost but also for realizing light-weight and flexible PV modules. Amorphous silicon/c-Si heterojunction (SHJ) architecture is suited to thin c-Si cells because of its excellent surface passivation capability. In this paper, we discuss the potential of very thin c-Si cells using the SHJ architecture.
关键词： solar cells,crystalline silicon,thin wafers,surface passivation,heterojunction
更新于2025-09-16 10:30:52
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Hexagonal Boron Nitride for Surface Passivation of Two-dimensional van der Waals Heterojunction Solar Cells
摘要： Two-dimensional (2D) semiconductors can be promising active materials for solar cells due to their advantageous electrical and optical properties, in addition to their ability to form high-quality van der Waals (vdW) heterojunctions using a simple process. Furthermore, the atomically thin nature of these 2D materials allows them to achieve light-weighted and transparent thin-film solar cells. However, strategies appropriate for optimizing their properties have not been extensively studied yet. In this paper, we propose a method for reducing the electrical loss of 2D vdW solar cells by introducing hexagonal boron nitride (h-BN) as a surface passivation layer. This method allowed us to enhance the photovoltaic performance of a MoS2/WSe2 solar cell. In particular, we observed ~74 % improvement of the power conversion efficiency owing to a large increase in both short-circuit current and open-circuit voltage. Such a remarkable performance enhancement was due to the reduction of the recombination rate at the junction and surface of non-overlapped semiconductor regions, which was confirmed via time-resolved photoluminescence analysis. Furthermore, the h-BN top layer was found to improve the long-term stability of the tested 2D solar cell under ambient conditions. We observed the evolution of our MoS2/WSe2 solar cell for a month and found that h-BN passivation effectively suppressed its degradation speed. In particular, the degradation speed of the passivated cell was twice as low as that of a non-passivated cell. This work reveals that h-BN can successfully suppress the electrical loss and degradation of 2D vdW heterojunction solar cells under ambient conditions.
关键词： surface passivation,solar cell,MoS2,WSe2,2D material,van der Waals heterojunction,h-BN
更新于2025-09-16 10:30:52
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TBP precursor agent passivated ZnO electron transport layer for highly efficient polymer solar cells
摘要： Defects passivation in electron transport layer (ETL) is a key issue to optimize the performance of polymer solar cells (PSCs). In this work, a novel strategy is developed to form defects passivated ZnO ETL by introducing 4-tert-butylpyridine (TBP) agent into precursor. While the power conversion efficiency (PCE) of the inverted PSCs based poly{4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl-alt-3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophene-4,6-diyl}:[6,6]-phenyl C71-butyric acid methyl ester (PTB7:PC71BM) with the pure ZnO ETL is 8.02%, that of the device with modified ZnO ETL is dramatically improved to 10.26%, with TBP accounting for ~28% efficiency improvement. Our study demonstrates that the precursor agent significantly affect the surface morphology and size of ZnO in ETL. Furthermore, it proves that the ZnO ETL with TBP (T-ZnO) is beneficial to polish interfacial contact between ETL and active layer and depress exciton quenching loss, resulting in enhanced exciton dissociation, efficient carrier collection and reduced charge recombination, thus improving the device performance. To verify the universality of T-ZnO ETL, the champion photovoltaic performance with a PCE of 11.74% (10% improvement) are obtained in the PBDB-T-2F:IT-4F based nonfullerene PSCs using T-ZnO as ETL. Our work developed a new, universal and facile strategy for designing highly efficient PSCs based on fullerene and nonfullerene blend systems.
关键词： Electron transport layer,4-tert-butylpyridine,ZnO,Defects passivation,Polymer solar cells
更新于2025-09-16 10:30:52
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Indium antimonide photovoltaic cells for near-field thermophotovoltaics
摘要： Indium antimonide photovoltaic cells are specifically designed and fabricated for use in a near-field thermophotovoltaic device demonstrator. The optimum conditions for growing the p-n junction stack of the cell by means of solid-source molecular beam epitaxy are investigated. Then processing of circular micron-sized mesa structures, including passivation of the side walls, is described. The resulting photovoltaic cells, cooled down to around 77 K in order to operate optimally, exhibit excellent performances in the dark and under far-field illumination by thermal sources in the [600–1000] °C temperature range. A short-circuit current beyond 10 μA, open-circuit voltage reaching almost 85 mV, fill factor of 0.64 and electrical power at the maximum power point larger than 0.5 μW are measured for the cell with the largest mesa diameter under the highest illumination. These results demonstrate that these photovoltaic cells will be suitable for measuring a near-field enhancement of the generated electrical power.
关键词： MBE,Passivation,Thermophotovoltaics,InSb
更新于2025-09-16 10:30:52
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Si-based GeSn photodetectors towards mid-infrared imaging applications
摘要： The GeSn detector offers the high-performance Si-based infrared photodetectors with complementary metal-oxide-semiconductor (CMOS) technique compatibility. In this work, we reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: i) the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cut-off wavelength has been extended to 3.65 μm. The maximum D* of 1.1×1010 cm?Hz1/2?W-1 measured at 77 K is comparable to that of commercial extended-InGaAs detectors; ii) the development of surface passivation technique on photodiode based on in-depth analysis of dark current mechanism, effectively reducing the dark current. Moreover, mid-infrared images were obtained using GeSn photodetectors, showing the comparable image quality with that acquired by using commercial PbSe detectors. This work is a major step towards Si-based mid-infrared photodetectors for imaging applications.
关键词： surface passivation,GeSn photodetector,high Sn composition,imaging,mid-infrared
更新于2025-09-16 10:30:52
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AIP Conference Proceedings [AIP Publishing 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Fes, Morocco (25–27 March 2019)] 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Evaluation of localized vertical current formation in carrier selective passivation layers of silicon solar cells by conductive AFM
摘要： Carrier selective contacts are of growing interest in the development and optimization of high efficiency silicon solar cell concepts. In particular, the passivation mechanism of ultra-thin oxide layers in interaction with poly-Si layers came into focus and the origin of tunnel currents and the so called pinhole conductivity is discussed. Many process parameters and their influence on the passivation effect are not clear, yet. The present study investigates the electrical properties in Si/SiOx/poly-Si layer system from different processes. For this purpose, high-resolution electrical evaluation of the current path density through the interfacial oxide is investigated by conductive AFM using a newly developed image calculation software tool to determine the vertical current path density. We compared two thicknesses of poly-Si (n+ PECVD) layers each at optimum annealing temperature (corresponding to highest i-VOC). The influence of three annealing temperatures (at optimum passivation, below and above) is investigated for an ozone oxide and pinhole densities are analyzed by the TMAH method. Finally, the optimum properties of the layer stack for three interfacial oxides (each at optimum passivation) are studied.
关键词： silicon solar cells,pinhole conductivity,passivation layers,carrier selective contacts,conductive AFM
更新于2025-09-16 10:30:52
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Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells
摘要： In this study, needle-like and pyramidal hybrid black silicon structures were prepared by performing metal-assisted chemical etching (MACE) on alkaline-etched silicon wafers. E?ects of the MACE time on properties of the black silicon wafers were investigated. The experimental results showed that a minimal re?ectance of 4.6% can be achieved at the MACE time of 9 min. The height of the nanostructures is below 500 nm, unlike the height of micrometers needed to reach the same level of re?ectance for the black silicon on planar wafers. A stacked layer of silicon nitride (SiNx) grown by inductively-coupled plasma chemical vapor deposition (ICPCVD) and aluminum oxide (Al2O3) by spatial atomic layer deposition was deposited on the black silicon wafers for passivation and antire?ection. The 3 min MACE etched black silicon wafer with a nanostructure height of less than 300 nm passivated by the SiNx/Al2O3 layer showed a low surface recombination rate of 43.6 cm/s. Further optimizing the thickness of ICPCVD-SiNx layer led to a re?ectance of 1.4%. The hybrid black silicon with a small nanostructure size, low re?ectance, and low surface recombination rate demonstrates great potential for applications in optoelectronic devices.
关键词： passivation,black silicon,metal-assisted chemical etching
更新于2025-09-16 10:30:52