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High-performance and moisture-stable perovskite solar cells with a 2D modified layer <i>via</i> introducing a high dipole moment cation
摘要： Recently, perovskite solar cells (PSCs) have represented a significant breakthrough due to their excellent photoelectric properties. However, short lifetime and poor moisture stability make it difficult for PSCs to achieve further application. Here, we have introduced a fluorinated ammonium salt (2,2,2-trifluoro-ethylamine hydroiodide, FEAI) with a high dipole moment to grow a 2D modified layer ((FEA)2PbI4) at the interface of perovskite/HTL. Due to the electronegativity of FEA+, the 2D modified layer brings about an effective passivation effect, leading to reduced interface defect sites and suppressed nonradiative recombination. Moreover, the remarkable hydrophobicity of the 2D modified layer can provide protection of 3D perovskite from moisture erosion but not at the expense of efficiency. As a result, based on (FAPbI3)0.85(MAPbBr3)0.15, the FEAI-modified PSCs showed a high power conversion efficiency (PCE) of 19.24%, with an open-circuit voltage (Voc) of 1.08 V, a short circuit current density (Jsc) of 22.65 mA cm?2 and a fill factor (FF) of 78%. After aging under a relative humidity of 50 ± 5% for 60 days, the modified PSCs retain 88% of their initial PCE. Our work provides a valuable strategy to prepare a 2D perovskite modified layer with a high dipole moment cation for high-performance PSCs with superior moisture stability.
关键词： 2D modified layer,moisture stability,perovskite solar cells,passivation effect,high dipole moment cation
更新于2025-09-12 10:27:22
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Defect Passivation in Hybrid Perovskite Solar Cells by Tailoring the Electron Density Distribution in Passivation Molecules
摘要： Commercialization of perovskite solar cells (PSCs) requires developing high?efficiency devices with good stability. Ionic defects existing in perovskite layer can serve as non-radiative recombination center to deteriorate the performance of PSCs, and can introduce chemical degradation of the perovskite material introducing instability issues. Here, passivation molecules with various electron density distribution (EDD) are employed as an ideal model to reveal the role of EDD on defect passivation in perovskite thin films. Power conversion efficiency (PCE) exceeding 21% with good stability in humid air was obtained for planar PSCs with 4-aminobenzonitrile (ABN) additive, higher than the reference PSCs with a PCE of 20.22%. The improved stability and performance features are attributed to the efficient passivation for charged defects in perovskites by adding ABN, which guarantees a smaller Urbach energy, longer carrier lifetime and less traps in the perovskite films.
关键词： perovskite solar cell,electron density distribution,stability,defect passivation,recombination
更新于2025-09-12 10:27:22
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Spray-Deposited Al <sub/>2</sub> O <sub/>3</sub> for Rear Passivation and Optical Trapping in Silicon Solar Cells
摘要： Low-cost spray deposition is employed to investigate the suitability of spray-deposited Al2O3 for rear passivation and optical trapping in passivated emitter rear contact (PERC) Si solar cells. Structural, optical, and electrical properties of spray-deposited Al2O3 ?lms are investigated. Capacitance-voltage measurements indicate that spray-deposited Al2O3 has a negative charge density of 3.19 × 1012 cm–2 for an 80-nm ?lm, suggesting that it can serve as the passivation layer. Optical properties of spray-deposited Al2O3 are identical to the Al2O3/SiNx stack prepared by atomic layer deposition and plasma-enhanced chemical vapor deposition, indicating that it can also serve as the optical trapping layer. Atomic force microscopy studies show that spray-deposited Al2O3 is crack and pore free, and its surface roughness has a root-mean-square value of 0.52 nm for an 80-nm ?lm. Spray-deposited Al2O3 is amorphous as determined by X-ray diffraction. X-ray photoelectron spectroscopy analysis suggests that spray-deposited Al2O3 is slightly Al-rich. The resistivity and breakdown ?eld of an 80-nm Al2O3 ?lm are 5.46 × 1014 Ω-cm and 3.28 MV/cm, respectively, which are stable after 800°C ?ring. These properties suggest that spray-deposited Al2O3 is a promising candidate to replace the Al2O3/SiNx stack in Si PERC cells.
关键词： Al2O3,spray deposition,rear passivation,Si PERC cells,optical trapping
更新于2025-09-12 10:27:22
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Low Temperature Preparation of CsPbI2Br for Efficient and Stable Perovskite Solar Cells
摘要： Inorganic cesium-based perovskite is an alternative material of organic-inorganic perovskite because of its high thermal stability. However, the phase instability and the high annealing temperature to form α-phase hinder its further development. Herein, this work successfully achieves the reduction of α-phase formation temperature from 350oC to 150oC and achieves high performance CsPbI2Br-based perovskite solar cells via doping CH3COOCs (CsAc) at optimum concentration. The CsAc doped CsPbI2Br film fabricated at low temperature of 150oC exhibits good crystallization and pinhole-free surface. The function of phase stability by doping CsAc is the grain boundary passivation to decrease defect states and enhance the charge transport. The PSC based on CsAc doped CsPbI2Br using planar structure achieves an efficiency of 10.53%, which is three times higher than undoped CsPbI2Br fabricated at 150oC. More importantly, the pure α-phase with CsAc doped film shows long time stability. This work highlights an available method to prepare high performance and phase stable perovskite solar cells at low temperature.
关键词： passivation,solar cell,stability,inorganic perovskite,low temperature
更新于2025-09-12 10:27:22
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Passivated metal oxide n-type contacts for efficient and stable organic solar cells
摘要： Suppressing trap states and localized electronic states in the forbidden gap of semiconductors as either active layers or contacts, is critical to the enhancement of optoelectronic device performance, such as solar cell, ultra-fast photodetectors, field-effect transistors as well as other optoelectronic applications. In this study, we demonstrate Lewis bases-passivated metal oxide n-type contacts can effectively improve the performance of organic solar cells (OSCs). OSCs with triethanolamine-passivated ZnO show two orders of magnitude lower trap density, and thus higher electron mobility and three times longer charge carrier recombination lifetime, relative to the devices based on as-cast ZnO. Passivated ZnO universally improves power conversion efficiency (PCE) of OSCs based on varied active layers. P3HT: PC71BM based solar cells with passivated-ZnO yield 86% PCE enhancement relative to the control devices based on as-cast ZnO, and PM6: Y6 based devices with passivated-ZnO exhibit PCEs up to 15.61%. Furthermore, light stability of OSCs with passivated-ZnO has also been improved along with enhanced device efficiency. Lewis base is also efficient to passivate SnOX contact for solar cells. This study highlights the importance of defect passivation on contact layers for improvement of the efficiency and stability of OSCs, and also provides one facile and effective passivation strategy.
关键词： defect passivation,electron transport layer,organic solar cell,tin oxide,zinc oxide
更新于2025-09-12 10:27:22
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Pulsed-laser-deposited lead sulfide nanoparticles based decoration of porous silicon layer as an effective passivation treatment for multicrystalline silicon
摘要： We report on the use of pulsed laser deposition (PLD) of PbS nanoparticles (PbS-NPs) on porous silicon layers in order to passivate multicrystalline silicon (mc-Si) substrates intended for solar cells applications. The porous silicon (PS) layer was first obtained through the electrochemical anodization of the mc-Si substrate, and then the PLD technique was used to decorate the PS layer by PbS-NPs at room temperature. By varying the number of laser ablation pulses (NLP) from 50 to 1200, the average size of the PbS-NPs was varied from ~2 nm to ~10 nm. The X-ray diffraction analysis has confirmed the crystalline quality of the PbS-NPs, whereas the transmission electron microscopy observations showed the uniform decoration of the PS by the PbS-NPs. By combining different characterization techniques, we were able to identify NLP = 200 as the optimal decoration condition that leads to the best passivation, in terms of the lowest surface reflectivity (of 15% at 500 nm wavelength), the highest PL intensity of the PS layer (centered around 633 nm) and the longest minority carrier lifetime (as long as ~430 μs versus 40 μs for the bare treated PS layer and 2.2 μs for the untreated bare mc-Si).
关键词： Pulsed laser deposition,Porous silicon,Solar cells,PbS nanoparticles,Surface passivation
更新于2025-09-12 10:27:22
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Solution processed Sb2S3 planar thin film solar cell of conversion efficiency 6.9% at open circuit voltage 0.7 V achieved via surface passivation by SbCl3 interface layer
摘要： Interfaces in Sb2S3 thin film solar cells strongly affect their open-circuit voltage (VOC) and power conversion efficiency (PCE). Finding an effective method of reducing the defects is a promising approach for increasing the VOC and PCE. Herein, the use of an inorganic salt SbCl3 is reported for post-treatment on Sb2S3 films for surface passivation. It is found that a thin SbCl3 layer could form on the Sb2S3 surface and produce higher-efficiency cells by reducing the defects and suppressing nonradiative recombination. Through density functional theory calculations, it is found that the passivation of the Sb2S3 surface by SbCl3 occurrs via the interactions of Sb and Cl in SbCl3 molecules with S and Sb in Sb2S3, respectively. As a result, incorporating the SbCl3 layer highly improves the VOC from 0.58 to 0.72 V; and an average PCE of 6.9–0.1% and a highest PCE of 7.1% is obtained with an area of 0.1 cm2. The achieved PCE is the highest value in the Sb2S3 planar solar cells. In addition, the incorporated SbCl3 layer also leads to a good stability of Sb2S3 devices, by which 90% of initial performance is maintained for 1080 h storage under ambient humidity (85–5% relative humidity) at room temperature.
关键词： high efficiency,high voltage,Sb2S3 solar cells,SbCl3,passivation
更新于2025-09-12 10:27:22
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Interfacial Passivation for Perovskite Solar Cells: The Effects of Functional Group in Phenethylammonium Iodide
摘要： Defect passivation is an effective method to improve the performance of perovskite solar cells. In this study, four phenethylammonium iodide featured with different functional groups directly linking to benzene ring are introduced on the surface of perovskite films ((FAPbI3)1-x(MAPbBr3-yCly)x) to investigate their passivation effects. It’s found that the electron density of the benzene ring has significant influence on the interfacial passivation: phenethylammonium iodide with electron-donating groups (methoxyl and methyl) present favorable passivation effects, while the salt with electron-drawing group (nitro) delivers undesirable impacts. The passivation is attributed to the electrostatic interaction between the benzene ring and the undercoordinated Pb2+ ions. The salts treated films are employed to fabricate solar cells, and an efficiency of 22.98% is achieved. In addition, the treated device shows good long-term stability within 1000 h storage in the dark ambient environment.
关键词： interfacial passivation,perovskite solar cells,phenethylammonium iodide,electron density,functional groups
更新于2025-09-12 10:27:22
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Improved Efficiency of Perovskite Solar Cells Using a Nitrogen Doped Graphene Oxide Treated Tin Oxide Layer
摘要： Tin oxide (SnO2) is widely adopted as an electron transport layer in perovskite solar cells (PeSCs) because it has high electron mobility, excellent charge selective behavior owing to a large band gap of 3.76 eV, and low temperature processibility. In order to achieve highly efficient SnO2-based PeSCs it is necessary to control the oxygen vacancies in the SnO2 layer, since the electrical and optical properties vary depending on the oxidation state of Sn. This study demonstrates that the performance of PeSCs may be improved by using nitrogen doped graphene oxide (NGO) as an oxidizing agent for SnO2. Since NGO changes the oxidation state of the Sn in SnO2 from Sn2+ to Sn4+, the oxygen vacancies in SnO2 can be reduced using NGO. Multiple devices are fabricated and various techniques are used to assess their performance, including X-ray photoelectron spectroscopy, dark current analysis, and the dependence of the open circuit voltage on light intensity. Compared with the average power conversion efficiency (PCE) of control devices, PeSCs with SnO2:NGO composite layers exhibit greater PCE with less deviation. Therefore, introduction of NGO in a SnO2 layer can be regarded as an effective method of controlling the oxidation state of SnO2 to improve the performance of PeSCs.
关键词： passivation,electron transport layer,perovskite solar cells,nitrogen doped graphene oxide,defects
更新于2025-09-12 10:27:22
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Impact of PbI <sub/>2</sub> Passivation and Grain Size Engineering in CH <sub/>3</sub> NH <sub/>3</sub> PbI <sub/>3</sub> Solar Absorbers as Revealed by Carrier‐Resolved Photo‐Hall Technique
摘要： With power conversion efficiencies now exceeding 25%, hybrid perovskite solar cells require deeper understanding of defects and processing to further approach the Shockley-Queisser limit. One approach for processing enhancement and defect reduction involves additive engineering—, e.g., addition of MASCN (MA = methylammonium) and excess PbI2 have been shown to modify film grain structure and improve performance. However, the underlying impact of these additives on transport and recombination properties remains to be fully elucidated. In this study, a newly developed carrier-resolved photo-Hall (CRPH) characterization technique is used that gives access to both majority and minority carrier properties within the same sample and over a wide range of illumination conditions. CRPH measurements on n-type MAPbI3 films reveal an order of magnitude increase in carrier recombination lifetime and electron density for 5% excess PbI2 added to the precursor solution, with little change noted in electron and hole mobility values. Grain size variation (120–2100 nm) and MASCN addition induce no significant change in carrier-related parameters considered, highlighting the benign nature of the grain boundaries and that excess PbI2 must predominantly passivate bulk defects rather than defects situated at grain boundaries. This study offers a unique picture of additive impact on MAPbI3 optoelectronic properties as elucidated by the new CRPH approach.
关键词： photo-Hall characterization,defect passivation,charge carrier transport,perovskites,charge recombination
更新于2025-09-12 10:27:22