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Adsorption and Cation Exchange Behavior of Zinc Sulfide (ZnS) on Mesoporous TiO2 Film and Its Applications to Solar Cells
摘要： Zinc sulfide (ZnS) was deposited onto the surface of mesoporous TiO2 film by a typical successive ionic layer adsorption and reaction (SILAR) process. By inducing a spontaneous cation exchange between ZnS and a target cation (Pb2+, Cu2+, Ag+, or Bi3+) dissolved in chemical bath when they are in contact, it was demonstrated successfully that white translucent ZnS on the substrate could be changed to brown-colored new metal chalcogenides and the amount of ZnS deposited originally by different conditions could be compared in a qualitative way with the degree of the color change. By utilizing this simple but effective process, the evolution of well-known ZnS passivation layer prepared from different chemical baths in quantum dot (QD)-sensitized solar cells could be tracked visually via checking the degree of color change of TiO2/ZnS electrodes after the induced specific cation exchange. When applied to representative CdS QD-sensitized solar cells, it was revealed clearly how the different degree and rate of ZnS deposition could affect the overall power conversion efficiency while finding an optimized passivation layer over TiO2/CdS electrode. Acetate anion-coupled Zn2+ source was observed to give a much faster deposition of ZnS passivation layer than nitrate anion one due to its higher pH-induced more favorable adsorption of Zn2+ on the surface of TiO2. As another useful application of the ZnS-based cation exchange, as-deposited ZnS was used as a template for preparing a more complex metal chalcogenide onto mesoporous TiO2 film. The ZnS-derived Sb2S3-sensitized electrode showed a promising initial result of over 1.0 % overall power conversion efficiency with a very thin ZrO2 passivation layer between TiO2 and Sb2S3.
关键词： passivation,Quantum dot-sensitizer,SILAR deposition,zinc sulfide,solar cell,cation exchange
更新于2025-09-23 15:21:01
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Shallow and Deep Trap States Passivation for Low-Temperature Processed Perovskite Solar Cells
摘要： While perovskite solar cells (PSCs) have emerged as promising low-cost solar power generators, most reported high-performance PSCs employ electron transport layers (ETLs, mainly TiO2) treated at high temperatures (≥450 °C), which may eventually hinder the development of flexible PSCs. Meanwhile, the development of low-temperature processed PSCs (L-PSCs) possessing performance levels comparable to that of high-temperature processed PSCs has actively been reported. In this study, L-PSCs with improved long-term stability and negligible hysteresis were developed through the effective passivation of shallow and deep traps in organic-inorganic hybrid perovskite (OIHP) crystals and at the ETL/OIHP interface. L-PSCs with alkaline chloride modification achieved state-of-the-art performance among reported L-PSCs (power conversion efficiency (PCE) = 22.6%) with a long-term shelf life. The origin of long-term stability and the efficient passivation of deep traps was revealed by monitoring the trap-state distribution. Moreover, the high PCE of a large-area device (21.3%, 1.12 cm2) were also demonstrated, confirming the uniformity of the modification.
关键词： trap states passivation,low-temperature processed,alkaline chloride modification,perovskite solar cells,long-term stability
更新于2025-09-23 15:21:01
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Rational Interface Engineering for Efficient Flexible Perovskite Light-Emitting Diodes
摘要： Although perovskite light-emitting diodes (Pe-LEDs) are promising for next-generation displays and lighting, their efficiency is still considerably below that of conventional inorganic and organic counterparts. Significant efforts in various aspects of the electroluminescence process are required to achieve high-performance PeLEDs. Here, we present an improved flexible PeLED structure based on the rational interface engineering for energy-efficient photon generation and enhanced light outcoupling. The interface-stimulated crystallization and defect passivation of the perovskite emitter are synergistically realized by tuning the underlying interlayer, leading to the suppression of trap-mediated nonradiative recombination losses. Besides approaching highly emissive perovskite layers, the outcoupling of trapped light is also enhanced by combining the silver nanowires-based electrode with quasi-random nanopatterns on flexible plastic substrate. Upon the collective optimization of the device structure, a record external quantum efficiency of 24.5% is achieved for flexible PeLEDs based on green-emitting CsPbBr3 perovskite.
关键词： defect passivation,flexible perovskite light-emitting diodes,perovskite light-emitting diodes,silver nanowires,light outcoupling
更新于2025-09-23 15:21:01
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Efficient Perovskite Solar Cells Via Surface Passivation by a Multifunctional Small Organic Ionic Compound
摘要： Surface passivation is a proven strategy for preparing high efficiency planar perovskite solar cells. Herein, we report an effective surface passivation strategy using the multifunctional small organic ionic compound 1-Ethylpyridinium chloride (EPC) in combination with (FAPbI3)0.95(MAPbBr3)0.05. It is found that the nitrogen atom in the pyridine group forms chemical bonds with under-coordinated lead ions in the perovskite film whereby the defect density is significantly reduced. The organic groups, including ethyl and pyridine, furthermore provide higher hydrophobicity for improved moisture stability. Finally, the chlorine anions were also found to play an important role in the defect passivation while further improving the perovskite crystallinity. Detailed theoretical study confirms that the EPC is indeed a good passivation agent for multiple defects. As a result, the power conversion efficiency is increased from 19.52% to as high as 21.19% via the EPC passivation and the devices show reduced hysteresis and increased stability.
关键词： 1-Ethylpyridinium chloride,surface passivation,multifunctional,perovskite solar cell,small organic ionic compound
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Enhancing Photocarrier Bulk Lifetime with Defect Engineering of Polycrystalline Passivated-Contact n-Cz Photovoltaic Devices
摘要： We study the photocarrier lifetime evolution of n-Cz Si material throughout the processing sequence for polycrystalline passivated contact devices. We show that a high temperature annealing pretreatment (known as Tabula Rasa) has a clear effect on enhancing bulk lifetimes of n-Cz Si. We further this development by integrating such defect engineering into the lower-temperature annealing of passivated contact. By applying oxidizing ambient gases during these anneals we report a photocarrier lifetime enhancement over an N2 environment. This enhancement is exhibited in a 1-sun iVOC of 735 mV when annealed in O2 rather than 708 mV in N2.
关键词： monocrystalline silicon,intrinsic point defects,passivation,thermal processing,Czochralski,photocarrier lifetime
更新于2025-09-23 15:21:01
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Applications of atomic layer deposition and chemical vapor deposition for perovskite solar cells
摘要： Metal halide perovskite solar cells (PSCs) have rapidly evolved over the past decade to become a photovoltaic technology on the cusp of commercialization. In the process, numerous fabrication strategies have been explored with the goal of simultaneously optimizing for device efficiency, stability, and scalability. Chemical vapor deposition (CVD) and atomic layer deposition (ALD) have proven to be effective tools for the fabrication of various components of PSCs. This review article examines the application of CVD and ALD for the deposition and modification of charge transport layers, passivation layers, absorber materials, encapsulants, and electrodes. It outlines the use of these vapor deposition techniques in state-of-the-art, multi-junction solar cell devices, and also contains a discussion of the stability of metal halide perovskite materials under CVD and ALD conditions based on in-situ characterization reported in literature. This article concludes with insights into future CVD and ALD research directions that could be undertaken to further aid the deployment of PSCs in emerging solar photovoltaic markets.
关键词： absorber materials,passivation layers,encapsulants,atomic layer deposition,charge transport layers,chemical vapor deposition,perovskite solar cells,electrodes
更新于2025-09-23 15:21:01
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High efficiency and stability of ink-jet printed quantum dot light emitting diodes
摘要： The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligands for ink-jet printing processing reminds a problem. Here we show, by adapting the idea of dual ionic passivation of quantum dots, ink-jet printed quantum dot light emitting diodes with an external quantum efficiency over 16% and half lifetime of more than 1,721,000 hours were reported for the first time. The liquid phase exchange of ligands fulfills the requirements of ink-jet printing processing for possible mass production. And the performance from ink-jet printed quantum dot light emitting diodes truly opens the gate of quantum dot light emitting diode application for industry.
关键词： quantum dot light emitting diodes,ink-jet printing,external quantum efficiency,dual ionic passivation,lifetime
更新于2025-09-23 15:21:01
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Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation
摘要： A series of electric field profile simulations in gallium nitride (GaN) p-i-n vertical diodes with negative bevel termination is carried out to optimize the bevel design. The bevel angles are varied from 90? to 0.1? with reasonably small increments to study the impact of the bevel angle on the electric field profile. The doping densities are also varied to study a more generalized trend; a new parameter defined as transition angle θt is proposed to characterize the effectivity of a beveled edge termination. Considering the potential dry etch damage on the bevel side-wall during device fabrication, the fixed surface charge from the dangling bonds and commonly used dielectric passivation are also added separately to investigate their influence. This article presents a comprehensive simulation study of GaN p-i-n diode with negative beveled edge termination, making it a useful guide for designing a simple and effective beveled edge termination, which eventually helps to enable the routine avalanche in GaN p-i-n diodes.
关键词： beveled edge termination,surface charge,simulation,gallium nitride (GaN),transition angle,silvaco,passivation,p-i-n diode,Avalanche,TCAD
更新于2025-09-23 15:21:01
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Thin-Film Solar Cells
摘要： Copper-indium-gallium-diselenide (CIGS) thin-film solar cells suffer from high recombination losses at the back contact and parasitic absorption in the front-contact layers. Dielectric passivation layers overcome these limitations and enable an efficient control over interface recombination, which becomes increasingly relevant as thin-film solar cells increase in efficiency and become thinner to reduce the consumption of precious resources. We present the optoelectronic and chemical interface properties of oxide-based passivation layers deposited by atomic layer deposition on CIGS. A suitable postdeposition annealing removes detrimental interface defects and leads to restructuring and oxidation of the CIGS surface. The optoelectronic interface properties are very similar for different passivation approaches, demonstrating that an efficient suppression of interface states is possible independent of the metal used in the passivating oxide. If aluminum oxide (Al2O3) is used as the passivation layer we confirm an additional field-effect passivation due to interface charges, resulting in an efficient interface passivation superior to that of a state-of-the-art cadmium-sulfide (CdS) buffer layer. Based on this chemical interface model we present a full-area rear-interface passivation layer without any contact patterning, resulting in a 1% absolute efficiency gain compared to a standard molybdenum back contact.
关键词： CIGS,CdS,atomic layer deposition,oxidation,thin-film solar cells,recombination losses,Al2O3,interface passivation
更新于2025-09-23 15:21:01
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??a??Extended Spiro Corea??Based Nonfullerene Electrona??Transporting Material for Higha??Performance Perovskite Solar Cells
摘要： Electron transport materials (ETMs) play a significant role in perovskite solar cells (PSCs). However, conventional solution processable organic ETMs are mainly restricted to fullerene derivatives and it is challenging to obtain nonfullerene ETMs with satisfactory properties. In this work, a new organic semiconductor SPS-4F is synthesized by utilizing the classical spiro[fluorine-9′9-thioxanthene] unit to construct a π-extended core. Although spiro is normally used in hole transport materials, the new spiro derivative SPS-4F is successfully used as an ETM in inverted PSCs with power conversion efficiency over 20%. In addition, SPS-4F can strongly coordinate with MAPbI3 perovskite and lead to efficient surface trap passivation. The resultant PSCs exhibit excellent stability in air because of the hydrophobic property of SPS-4F. This work opens up opportunities to obtain a new family of ETMs based on spiro and paves a way to the fabrication of high-performance PSCs with low cost.
关键词： spiro derivatives,perovskite solar cells,nonfullerenes,passivation,electron transport materials
更新于2025-09-23 15:21:01