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Electrical Properties of a ZTO Thin-Film Transistor Prepared with Near-Field Electrohydrodynamic Jet Spraying
摘要： Zinc-tin oxide (ZTO) thin-films were prepared by applying a near-field around the tip of electro-hydrodynamic (EHD) jet spray system and characterized. Oval shaped multi droplets were obtained by the near-field assisted EHD (NF-EHD) jet spray. The optimized condition of an approximately 2.5 to 3 volts difference between the tip and near-field enabled the oxide semiconductor solution to spray properly. The electrical properties of ZTO thin-film transistor showed a mobility of 2.96 cm2/Vs, an on-to-off ratio of 107, a threshold voltage of 4.40 V, a subthreshold slope of 0.54 V/dec, and. Improved stability under bias stress and relaxation after stress were observed after applying a near-field to the EHD jet spray system.
关键词： Oxide TFT,Electrohydrodynamic Jet,Near-field,Spray,Electrical Properties
更新于2025-09-19 17:15:36
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Electrical Properties of High-Quality Synthetic Boron-Doped Diamond Single Crystals and Schottky Barrier Diodes on Their Basis
摘要： The temperature dependences of the specific resistance and Hall coefficient of high-quality synthetic boron-doped diamond single crystals grown via a high-pressure high-temperature method are studied. The concentration of acceptors in the (001) cut plates was varied in a range of 2 × 1015–3 × 1017 cm–3 by varying the concentration of boron in the growth mixture (0.0004–0.04 at %). Thin rectangular plates with the uniform concentration of boron and free from extended structural defects are cut out by a laser after the X-ray topography and mapping of UV luminescence. The concentrations of donors and acceptors in the samples are calculated from the data of the Hall effect and capacitance–voltage characteristics. The obtained results correlate with the concentration of boron in the growth mixture. The minimum compensation ratio of acceptors with donors (below 1%) is observed in the crystals grown with the concentration of boron in the growth mixture of 0.002 at %. The ratio increases when the amount of boron is increased or decreased. The samples grown at such a concentration of boron have the maximum mobility of charge carriers (2200 cm2/(V s) at T = 300 K and 7200 cm2/(V s) at T = 180 K). The phonon scattering of holes dominates throughout the range of temperatures (180–800 K), while the scattering by point defects (neutral and ionized atoms of the impurity) is insignificant. The diamond crystals which are grown from a mixture containing 0.0005–0.002 at % boron and have perfect quality and a lattice mechanism of scattering can be considered as a reference semiconductor.
关键词： Schottky barrier diode,semiconductor diamond,electrical properties
更新于2025-09-19 17:15:36
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Synthesis of SnSb2Te4 Microplatelets by High-energy Ball Milling
摘要： In this work we demonstrate that high-energy ball milling process can be used to synthesize SnSb2Te4 without surfactant and further annealing. Milling parameters such as ball to raw material ratio (5:1) and milling time (2h) were determined to be suitable for synthesizing microplatelets of SnSb2Te4. The powders after milling for various durations were characterized by X-ray powder diffraction, scanning electron microscopy and electrical resistance measurements.
关键词： mechanical alloying,semiconductors,electrical properties
更新于2025-09-19 17:15:36
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Crystal Growth and Structure-Property Optimization of Thermally Annealed Nanocrystalline Ga2O3 Films
摘要： The effects of thermal annealing on the crystal chemistry, crystallization process, index of refraction, mechanical properties, and electrical characteristics of nanocrystalline Ga2O3 films was evaluated. Ga2O3 thin films were sputtered onto Si(100) substrates at 500 oC utilizing a Ga2O3 ceramic target, while post-deposition thermal annealing was performed between a range of 500-900 oC. Both structural quality and packing density of the Ga2O3 films was improved by the thermal annealing as indicated by the X-ray diffraction and ellipsometry studies. The atomic force microscopy analysis indicates that the annealing temperature has a dramatic effect on surface roughness, especially when the annealing temperature exceeds 700 oC. Corroborating with structure and morphology changes, the high values of hardness and elastic modulus are noted for Ga2O3 films annealed at higher temperatures (800-900 oC). Index of refraction (n) and extinction coefficient (k) results, and their dispersion profiles indicate that the annealing temperature strongly influences the optical properties. The refractive index values vary in the range of 1.78–1.84 (632 nm) due to gradual improvement of structural quality, texturing and packing density upon thermal annealing. A correlation between annealing temperature, optical and electrical characteristics in Ga2O3 films is established.
关键词： Mechanical Properties,Sputter-deposition,Annealing,Electrical Properties,β-Ga2O3 Films,Crystal Chemistry
更新于2025-09-19 17:13:59
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Optical and electrical properties of fullerene C70 for solar cell applications
摘要： This research paper demonstrates the successful deposition of fullerene C70 for application as an acceptor material in Schottky barrier organic solar cell (OSC) device with structure fluorine-doped-tin-oxide/molybdenumtrioxide/fullerene/lithiumfluoride/aluminium (FTO/MoO3/C70/LiF/Al) using vapor thermal deposition technique. Morphology analysis using field emission scanning electron microscopy (FESEM) shows the mesoporous nature of highly cross-linked C70 molecules in deposited C70 thin film. But more uniform C70 film with less porosity has been deposited with high evaporation rate. We report the optical and electrical characterizations which reveal the thin film to be useful in photovoltaic applications. To study optical absorption spectra over visible energy range, prepared samples have been characterized by ultraviolet–visible (UV–vis) absorption spectroscopy. Optical dielectric parameters and dispersion properties of samples are studied. Constant Photocurrent Method (CPM) is employed to measure the mid gap absorption spectra of fabricated device. Defect density of states (DOS) distribution, Urbach energy and steepness parameter are also evaluated. Current-voltage characteristics of device in dark as well as under illumination surmise the behavior of device similar as Schottky barrier OSC.
关键词： Electrical properties,Optical properties,Fullerenes,Defects,Vapor deposition
更新于2025-09-19 17:13:59
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Interface Engineering by Thiazolium Iodide Passivation Towards Reduced Thermal Diffusion and Performance Improvement in Perovskite Solar Cells
摘要： Interface engineering has become one of the most facile and effective approaches to improve solar cells performance and its long-term stability and to retard unwanted side reactions. Three passivating agents are developed which can functionalize the surface and induce hydrophobicity, by employing substituted thiazolium iodide (TMI) for perovskite solar cells fabrication. The role of TMI interfacial layers in microstructure and electro-optical properties is assessed for structural as well as transient absorption measurements. TMI treatment resulted in VOC and fill factor enhancement by reducing possible recombination paths at the perovskite/hole selective interface and by reducing the shallow as well as deep traps. These in turn allow to achieve higher performance as compared to the pristine surface. Additionally, the TMI passivated perovskite layer considerably reduces CH3NH3 sion and degradation induced by humidity. The un-encapsulated perovskite solar cells employing TMI exhibit a remarkable stability under moisture levels (≈50% RH), retaining ≈95% of the initial photon current efficiency after 800 h of fabrication, paving the way towards a potential scalable endeavor.
关键词： charge transport,opto-electrical properties,perovskites solar cells,passivation,thin film photovoltaics
更新于2025-09-19 17:13:59
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Photo-response in 2D metal chalcogenide-ferroelectric oxide heterostructure controlled by spontaneous polarization
摘要： The interplay between free and bound charges in two-dimensional (2D) semiconductor/ferroelectric oxide structures is responsible for the unique opto-electrical properties of these structures. In this study, we vertically combined the 2D layered semiconductors MoS2 (n-type) and WSe2 (p-type) with a ferroelectric oxide (PbTiO3) and found that a ferroelectric polarization induced accumulation or depletion in the layered materials. The heterostructures exhibited polarization-dependent charge distribution and pinched hysteresis. We show that polarization at the interface promoted e?cient charge separation of photo-generated carriers in the 2D layers. Optical control of electrical transport was e?ectively achieved in the MoS2 layers. This study potentially opens up new applications for semiconductor/ferroelectric systems in electronic devices.
关键词： opto-electrical properties,optical control,MoS2,2D semiconductor,ferroelectric oxide,PbTiO3,charge separation,WSe2
更新于2025-09-19 17:13:59
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A remarkable effect of Pr doping on key optoelectrical properties of CdS thin films prepared using spray pyrolysis technique for high-performance photodetector applications
摘要： High-quality thin film-based photodetectors containing praseodymium doped cadmium sulfide (Pr:CdS) were fabricated through spray pyrolysis and studied for various opto-electrical applications. Field emission electron microscopy (FE-SEM) revealed that the prepared films were highly compacted with an extremely fine nanostructure without any pinhole or crack. X-ray diffraction and FT-Raman spectroscopy studies confirmed the single hexagonal phase of all the films. The crystallite size was found to lie between 19 and 32 nm. Optical spectroscopy revealed that the fabricated films have low absorbance and high transmittance (in range of 70–80%). The energy gap was found to lie in the range of 2.40–2.44 eV. The PL spectra contained an intense green emission band at ~531 ± 5 nm (2.33 eV), and its intensity was enhanced by increasing the Pr doping content in CdS. The dark and photo currents of CdS increased by approximately 950 and 42 times, respectively with the addition of 5.0 wt.% Pr. The responsivity (R) and specific detectivity (D*) were remarkably enhanced to 2.71 AW-1 and 6.9×1011 Jones, respectively, for the 5.0 wt.% Pr:CdS film. The external quantum efficiency (EQE) of 5 wt.% Pr:CdS films was 43 times that of pure CdS films, and the on/off ratio was 3.95 × 102 for 5.0 wt.% Pr:CdS film. Its high R, D*, and EQE values, and photo-switching behavior make Pr:CdS a good contender for high quality photodetector applications.
关键词： responsivity,external quantum efficiency,detectivity,CdS and Pr: CdS films,opto-electrical properties
更新于2025-09-19 17:13:59
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Structure, electrical and magnetic properties of Co <sub/>0.8</sub> Zn <sub/>0.2</sub> Fe <sub/>2</sub> O <sub/>4</sub> /(K <sub/>0.47</sub> Na <sub/>0.47</sub> Li <sub/>0.6</sub> ) NbO <sub/>3</sub> bilayered thin films grown by pulsed laser deposition
摘要： Structural, ferroelectric, and magnetic properties of lead-free bilayer composite films with composition (K, Na, Li) NbO3-CoZnFe2O4 (P-S) and CoZnFe2O4-(K, Na, Li) NbO3 (S-P) layers deposited on Pt/Si substrates by a pulsed laser deposition technique have been studied. Structural analysis carried out by X-ray diffraction and Raman scattering confirmed the formation of individual phases of perovskite and spinel without any intermediate/secondary phase. To probe the stoichiometric elemental composition and cationic distribution at the interstitial sites, X-ray photoelectron spectroscopy measurement was carried out, which confirmed the mixed state of Fe-ions valence, while the Zn2+ state was retained. Ferroelectric and ferromagnetic behavior of the bilayered films was observed concurrently depending upon the growth sequence adopted. Magnetic properties of the film with spinel on the top layer exhibited higher saturation magnetization. Dielectric permittivity follows the Maxwell–Wagner polarization caused by thermally agitated carriers. Appreciable ferroelectric properties were achieved in S-P films while the P-S film exhibited a lossy ferroelectric hysteresis loop, which is attributed to a high leakage current value.
关键词： pulsed laser deposition,structural properties,magnetic properties,electrical properties,bilayered thin films
更新于2025-09-16 10:30:52
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Direct effects of UV irradiation on graphene-based nanocomposite films revealed by electrical resistance tomography
摘要： The integration of surface sensing elements providing an in situ monitoring of the UV-induced degradation effects in composite materials and structures is crucial for their applications in hostile environments characterized by high levels of radiation, such as space. In this work, the electrical response of a novel UV-sensitive nanocomposite film was investigated using electrical resistance tomography (ERT). The conductivity changes measured at the irradiated surfaces were compared with results from morphology analysis by scanning electron microscopy (SEM) and surface analytical techniques, such as Raman microscopy. Highly conductive and UV-sensitive nanocomposite coatings were prepared by embedding the graphene and deoxyribonucleic acid (DNA) component in a poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) matrix. The coatings were deposited onto carbon-reinforced laminated structures fabricated by resin transfer molding process using an aerospace-grade epoxy resin. Two different irradiation conditions were tested by exposing the nanocomposite surfaces to UV-C irradiances of 2.6 and 4.0 mW/cm2. Results show that the ERT technique has great potential for the in situ health monitoring of carbon-based materials and structures for aerospace applications, which are subject to degradation by UV-C radiation: it allows mapping of the conductivity changes occurring at the surface of the graphene/DNA/PEDOT:PSS coatings during irradiation.
关键词： Electrical resistance tomography,B. Electrical properties,A. Functional composites,A. Nano composites
更新于2025-09-16 10:30:52