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A highly adhesive flexible strain sensor based on ultra-violet adhesive filled by graphene and carbon black for wearable monitoring
摘要： Ensuring the accuracy of signal detection under repeated deformation is a challenge for ?exible sensor reported in recent years, and achieving reliable adhension between the sensor and substrate is a key factor. Here, this article reported a highly adhesive ?exible strain sensor based on ultra-violet adhesive ?lled by modi?ed graphene and carbon black for wearable monitoring. This strain sensor with a typical resistive behavior shows gauge factor calculated at 0～10% strain is 2.1. It exhibits short curing time (～1 h), fast response (～40 ms), excellent adhesive strength (4500 kPa), and adhesiveness to various bending surfaces. Furthermore, this strain sensor can be directly prepared on elastic columns and rubber gloves, and exhibits excellent performance in three-dimensional force detection and writing gesture recognition. The ability of adhesive conformability to arbitrary and complex surfaces shows that the strain sensor has broad application prospects in wearable devices.
关键词： Electrical properties,Smart materials,Adhesive joints,Mechanical properties,Nano composites
更新于2025-09-16 10:30:52
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Single-step growth of high quality CIGS/CdS heterojunctions using Pulsed Laser Deposition
摘要： This work reports on the utilization of pulsed laser deposition (PLD) for the preparation of CdS thin films and CdS/Cu(In,Ga)Se2 heterojunction structures on soda-lime glass (SLG) and Mo-coated SLG substrates, respectively, under various process conditions. Single phase, stoichiometric and high optical quality CdS films are obtained at a fluence of 1.1 J/cm2 and at deposition temperatures of 200 – 400oC. The results of this investigation were used to grow CdS on Cu(In,Ga)Se2/Mo/SLG. Both Cu(In,Ga)Se2 and CdS layers have been deposited sequentially using PLD without interrupting the influence of CdS deposition temperature on the properties of CdS/Cu(In,Ga)Se2 heterojunction has been extensively studied and is reported herein for the first time. Low series and high shunt resistances are obtained for the samples where CdS was grown at 200 and 300oC. The CdS/Cu(In,Ga)Se2 diode grown at CdS deposition temperature of 300oC exhibits the lowest ideality factor and leakage current, indicating the better quality of the diode. The results of this work demonstrate that high-quality CdS/Cu(In,Ga)Se2 diodes are obtained using pulsed laser deposition in a single-step growth process, eliminating the need for selenization of Cu(In,Ga)Se2 and the use of other growth techniques such as chemical bath deposition for CdS.
关键词： CdS deposition temperature,Electrical properties,Pulsed Laser Deposition,CdS,Optical properties,CdS/CIGS junction
更新于2025-09-16 10:30:52
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Dielectric and electrical properties of annealed ZnS thin films. The appearance of the OLPT conduction mechanism in chalcogenides
摘要： The annealing temperature (Ta) dependence of the structural, morphological, electrical and dielectric properties of ZnS thin films was investigated. In this work, we consider the as-deposited and annealed ZnS thin films at different temperatures. The as-deposited films were amorphous in nature. However, the films annealed at Ta ≥ 673 K, exhibited a hexagonal structure with (002) preferential orientation. The post annealing caused an improvement in crystallinity. The best one was observed at Ta = 723 K. Grain size increased from 7 nm to 25 nm as annealing temperature was increased from 673 K to 723 K. The surface of annealed samples is homogenous and uniform and the rms roughness is dependent on the annealing temperature: it increases with temperature within the range 5–50 nm. The film electrical conductance is found to be dependent on frequency measurement and annealing temperature: the dc conductance exhibits semi-conductor behavior for all ZnS films over the explored range of temperature and the conductance was found to enhance with increasing annealing temperature up to 623 K. In addition, it was observed that the highest conductance and lowest activation energy of ZnS films were obtained at an annealing temperature of 623 K. The mechanism of alternating current ac conductance can be reasonably explained in terms of the overlapping-large polaron tunnelling (OLPT) model for samples annealed at 623 K and 673 K. To our knowledge, this conduction mechanism was rarely found in chalcogenide materials. A significant change of Nyquist plot with annealing temperature was noted permitting the correlation between the microstructure and its electrical properties. The impedance analysis investigated that the relaxation process is well pronounced for the both annealed films at 623 K and 673 K. The dielectric behavior was associated to the polarization effect, an improvement on the dielectric constant 30 and dielectric loss 300 with annealing was noticed.
关键词： electrical properties,dielectric properties,annealing temperature,OLPT conduction mechanism,ZnS thin films
更新于2025-09-16 10:30:52
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Cryostat setup for measuring spectral and electrical properties of light-emitting diodes at junction temperatures from 81 K to 297 K
摘要： We introduce a cryostat setup for measuring fundamental optical and electrical properties of light-emitting diodes (LEDs). With the setup, the cryostat pressure and the LED properties of the forward voltage, junction temperature, and electroluminescence spectrum are monitored with temperature steps less than 1.5 K, over the junction temperature range of 81–297 K. We applied the setup to commercial yellow AlGaInP and blue InGaN LEDs. At cryogenic temperatures, the fine structure of the electroluminescence spectra became resolved. For the yellow LED, we observed the phonon replica at 2.094 eV that was located 87 meV below the peak energy at the junction temperature of 81 K. For the blue LED, we observed the cascade phonon replicas at 2.599 eV, 2.510 eV, and 2.422 eV with the energy interval of 89 meV. For both LED types, the forward voltage increased sharply toward the lower temperatures due to the increased resistivity of materials in the LED components. We found significant differences between the temperature dependent behaviors of the forward voltages, spectral peak energies, and bandgap energies of LEDs obtained from the Varshni formula. We also noted a sharp pressure peak at 180–185 K arising from the solid-vapor phase transition of water when the base level of the cryostat pressure was approximately 0.4 mPa.
关键词： spectral properties,light-emitting diodes,electrical properties,junction temperature,phonon replicas,cryostat setup
更新于2025-09-16 10:30:52
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[IEEE 2019 1st International Conference on Advances in Science, Engineering and Robotics Technology (ICASERT) - Dhaka, Bangladesh (2019.5.3-2019.5.5)] 2019 1st International Conference on Advances in Science, Engineering and Robotics Technology (ICASERT) - Electrical Properties of CSS Deposited CdTe Thin Films for Solar Cell Applications
摘要： CdTe is a very potential absorber material for thin film solar cell application. In this work CdTe thin films (TF) were deposited on CdS thin films by close-spaced sublimation (CSS) technique at different source and substrate temperature in inert gas condition. To bring out the optimum temperature set for CSS deposited CdTe films, several experiments were done. The process pressure of the chamber during deposition was maintained at 1.5 Torr in a dynamic condition. The effects of deposition temperature on the electrical properties of the as-deposited CdTe films were investigated by Hall Effect measurement. The films were deposited at 610 0C, 630 0C, 650 0C and 670 0C source temperatures. The first three films showed p-type conductivity while n-type conductivity appeared in the film deposited at 670 °C. The hole concentration of the as-grown p-type CdTe films followed an upward trend with the increase of source temperature and it reached a peak value at 650 0C. The highest hole mobility was observed for the lowest source temperature. However, the resistivity of the CdTe films was found increasing with the increase of source temperature. Thus, the CdTe thin film deposited at 650 0C showed better electrical properties for solar cell applications.
关键词： Solar cells,Electrical properties,Close-spaced sublimation,Hall Effect measurement,CdTe thin film
更新于2025-09-16 10:30:52
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Preparation of low-temperature sintered high conductivity inks based on nanosilver self-assembled on surface of graphene; 基于纳米银在石墨烯表面自组装制备低温固化高导电纳米银墨水;
摘要： Finer nanoplates of silver are prepared by self-assembly on the surface of graphene, and the low-temperature sintered high conductivity ink containing the silver nanoplates is prepared. Most importantly, graphene is added to the solution before the chemical reduction reaction occurs. Firstly, it is found that silver nanoplates have self-assembly phenomenon on the surface of graphene. Secondly, the Ag nano hexagonal platelets (AgNHPs) with small particle sizes (10 nm), narrow distribution and good dispersion are prepared. Especially, smaller sizes (10 nm) and narrower particle size distribution of AgNHPs particles can be easily controlled by using this process. Finally, the conductivity of the ink is excellent. For example, when the printed patterns were sintering at 150 °C, the resistivity of the ink(GE: 0.15 g/L) reached the minimum value of 2.2×10?6 Ω·cm. And the resistivity value was 3.7×10?6 Ω·cm, when it was sintered at 100 °C for 30 min. The conductive ink prepared can be used for the field of printing electronics as ink-jet printing ink.
关键词： electrical properties,conductive ink,Ag nanoparticles,self-assembly,graphene
更新于2025-09-16 10:30:52
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Cupric oxide film with a record hole mobility of 48.44?cm2/Vs via direct–current reactive magnetron sputtering for perovskite solar cell application
摘要： Cupric iodide and cuprous oxide as hole–transporting layer (HTL) materials in perovskite solar cells (PSCs) have been reported. However, the compositional instability and poor electrical conductivity of ?lms in ambient air have limited their applications in PSCs. Cupric oxide (CuO) ?lms may be used as a HTL material in PSCs due to their high electrical conductivity and high stability in ambient air even if their hole mobility is still required to further increase. Herein, single-phase monoclinic CuO ?lms with p–type conduction were room-temperature prepared via direct–current reactive magnetron sputtering, thereby garnering low–cost advantage. CuO ?lm prepared at 1:3 O2/Ar ?ow ratio (Ro/a) was best crystallized and preferred ??1 1 1? oriented, thereby resulting in a record mobility of 48.44 cm2/Vs and small electrical resistivity of 0.50 Ω?cm. The PSCs with CuO as HTL material obtained 1.3% power conversion e?ciency, indicating that CuO ?lms with record hole mobility could be used as a HTL material in PSCs.
关键词： Hole–transporting layer,Cupric oxide,Perovskite solar cells,Magnetron sputtering,Optical properties,Electrical properties
更新于2025-09-12 10:27:22
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ZnO@TiO2 Core Shell Nanorod Arrays with Tailored Structural, Electrical, and Optical Properties for Photovoltaic Application
摘要： ZnO has prominent electron transport and optical properties, beneficial for photovoltaic application, but its surface is prone to the formation of defects. To overcome this problem, we deposited nanostructured TiO2 thin film on ZnO nanorods to form a stable shell. ZnO nanorods synthesized by wet-chemistry are single crystals. Three different procedures for deposition of TiO2 were applied. The influence of preparation methods and parameters on the structure, morphology, electrical and optical properties were studied. Nanostructured TiO2 shells show different morphologies dependent on deposition methods: (1) separated nanoparticles (by pulsed laser deposition (PLD) in Ar), (2) a layer with nonhomogeneous thickness (by PLD in vacuum or DC reactive magnetron sputtering), and (3) a homogenous thin layer along the nanorods (by chemical deposition). Based on the structural study, we chose the preparation parameters to obtain an anatase structure of the TiO2 shell. Impedance spectroscopy shows pure electron conductivity that was considerably better in all the ZnO@TiO2 than in bare ZnO nanorods or TiO2 layers. The best conductivity among the studied samples and the lowest activation energy was observed for the sample with a chemically deposited TiO2 shell. Higher transparency in the visible part of spectrum was achieved for the sample with a homogenous TiO2 layer along the nanorods, then in the samples with a layer of varying thickness.
关键词： TiO2 thin film,optical properties,ZnO nanorods,chemical deposition,DC reactive magnetron sputtering,pulsed laser deposition,electrical properties,core–shell
更新于2025-09-12 10:27:22
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Performance of Natural Dyes in Dye-Sensitized Solar Cell as Photosensitizer
摘要： In this research work five types of titanium dioxide (TiO2) nanocrystalline sol–gel paste with three different types of dye have been prepared and layered on Indium Tin-Oxide coated glass to fabricate dye-sensitized solar cells. The dyes extracted from Malabar spinach seeds (MSS), Red spinach and Pomegranate burgs were used as photosensitizer. All the electrical properties investigated by LCR meter were found to be improved with MSS dye but sample with 0.3 M HNO3 (sample-3) exhibited the best electrical properties. The current–voltage characteristics for all the samples showed ideal behavior. The highest maximum power of 176.3 μW and efficiency of 9.23% was found for sample-3 with MSS dye. The smallest crystallite size was found to be 28.82 nm for sample-3 by XRD data which was also supported by the SEM results. Thus, this study reveals that MSS dye has the great potential to be used as photosensitizer.
关键词： TiO2,Solar cell,Dye-sensitized,Photosensitizer,Electrical properties
更新于2025-09-12 10:27:22
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Effect of carbon quantum dots on the optical and electrical properties of polyvinylidene fluoride polymer for optoelectronic applications
摘要： In this work, the effect of carbon quantum dots (CQDs) on the optical and electrical properties of polyvinylidene fluoride (PVDF) has been investigated. Different weight percent (0, 1, 3, 5 and 10 wt%) ratios of CQDs/PVDF nanocomposite films were prepared using solution casting technique. The morphological properties of CQDs were examined using a transmission electron microscope (TEM). The optical properties of the prepared plain PVDF and CQDs/PVDF nanocomposite films were measured using UV–Visible spectrophotometer in the wavelength range 190–1200 nm. The direct energy band gap (Eg dir.) of the prepared films decreases from 5.28 to 2.96 eV as the wt% ratio of CQDs/PVDF increases from 0 to 10.0%. The DC electrical conductivity (σDC) of the prepared nanocomposite films are measured in the temperature range from 298 to 398 K. The electrical conductivity of the nanocomposite films has been enhanced six times in magnitude as compared with that of the plain PVDF film, as the wt% ratio of CQDs/PVDF increases up to 10 wt%. The enhancement in the optical and electrical properties of PVDF makes it as a novel candidate in various optoelectronic applications.
关键词： Optical properties,Electrical properties,Polyvinylidene fluoride,Nanocomposite films,Carbon quantum dots
更新于2025-09-11 14:15:04