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The phase optimization, optical and electrical properties of kesterite Cu<sub>2</sub>ZnSnS<sub>4</sub> thin film prepared by single target RF magnetron sputtering technique for solar cell application.
摘要： Cu2ZnSnS4 (CZTS) thin film was prepared by RF sputtering technique from a single quaternary target by optimizing RF power, in-situ substrate temperature and post deposition annealing temperature. The single phase formation of crystalline CZTS thin film has been verified at a particular optimized condition by characterizing through X-ray diffraction, Raman selected area electron diffraction study. The surface properties such as particle size, shape and roughness and elemental composition of amorphous and crystalline phase of CZTS studied by atomic force microscope, scanning electron microscope and energy dispersive analysis of x-rays. The optical absorption and photoluminescence studies of post-deposition annealed film prove the defect free and single phase CZTS formation. The band gap calculation for crystalline CZTS showed band gap of 1.49eV calculated from the Tauc plot. The electrical properties of optimized CZTS thin film has been studied from Hall effect measurement showing P-type conductivity with better carrier concentration and Hall mobility.
关键词： Optical properties,Electrical properties,Phase optimization without post sulfurization process,Solar cell material,CZTS thin film,Single target RF magnetron sputtering
更新于2025-09-11 14:15:04
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Stretchable photodetector utilizing the change in capacitance formed in a composite film containing semiconductor particles
摘要： Conventional photodetectors (PDs) are based on measuring photocurrent, which is formed by the separation of electron-hole pairs generated in semiconductors upon light irradiation, through electrodes in direct contact with the semiconductors. Such devices are usually fabricated through complicated and precise processes such as thin film formation by vacuum deposition and fine patterning by photolithography and etching. In addition, PDs have a drawback that the contact quality between the electrode and the semiconductor is easily affected by external stress applied to the device. These issues make it difficult to implement a mechanically flexible device driven by conventional sensing mechanisms. Here we report a simple structured PD based on a semiconductor particle-polymer composite layer surrounded by two facing transparent electrodes, inspired by the fact that the dielectric properties of certain semiconductors change upon light irradiation with a photonic energy greater than or equal to their bandgap. In order to realize this, we synthesized a transparent and stretchable polymer, polyurethane-urea (PUU), which is compatible with Ag nanowires (AgNWs) and polydimethylsiloxane (PDMS) used for implementing stretchable electrodes, and dispersed ZnS:Cu particles into the PUU to form a sensory layer. The fabricated composite surrounded by two facing AgNW-based transparent electrodes was transparent and stretchable, and the capacitance formed at the composite sensitively changed upon irradiation of light with a wavelength of 420 nm and a power of 1.2 mW/cm2 even when the device was stretched or cut in half.
关键词： Flexible composites,Nanocomposites,Electrical properties
更新于2025-09-11 14:15:04
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Thin film Sn2S3 via chemical deposition and controlled heating - its prospects as a solar cell absorber
摘要： As a semiconductor of “earth-abundant” elements, Sn2S3 with a bandgap (Eg) close to 1 eV merits attention, but a method to prepare phase-pure thin film remains elusive. We report the formation of Sn2S3 thin film of 360 nm in thickness by heating chemically deposited tin sulfide thin films at 450 oC during 30 – 45 min in presence of sulfur at a pressure, 75 Torr of nitrogen. Energy dispersive x-ray emission spectra and grazing incidence x-ray diffraction established a reaction route for this conversion of SnS completely to Sn2S3 via an intermediate phase, SnS2. The optical bandgap of the material is 1.25 eV (indirect) and 1.75 eV (direct, forbidden). The optical absorption suggests a light-generated current density of 30 mA/cm2 for the Sn2S3 film (360 nm) as a solar cell absorber. Thin film Sn2S3 formed in 30 min heating has a p-type electrical conductivity in the dark of 1x10–4 Ω–1 cm–1, which increases to 3x10–4 Ω–1 cm–1 in 0.2 s under 800 W/m2 tungsten-halogen illumination. An estimate made for its mobility-lifetime product is, 6x10–6 cm2 V–1. We discuss the prospects of this material for solar cells.
关键词： SnS-CUB,Sn2S3,semiconductor thin film,chemical deposition,energy conversion,ottemannite,cubic tin sulfide,renewable energy,optical and electrical properties,solar cells
更新于2025-09-11 14:15:04
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Multi-mode optical coded patterns enabled by upconversion nanoparticles and photonic crystals
摘要： The Al-Zr-ZnO films was deposited on the surface of n-Si (111) by sol-gel method. The results showed that the average grain size of Al-Zr-ZnO films decreases due to ion doping concentration. Based on XPS analysis, the surface defect oxygen of Al-Zr-ZnO films decreases. As for graphene/ Al-Zr-ZnO Schottky contact, barrier height increased and ideality factor decreased with the increasing of Al ion or Zr ion doping, indicating that the rectifying characteristics of graphene/Al-Zr-ZnO Schottky contacts was enhanced due to ion co-doping. It can be explained that oxygen vacancies of Al-Zr-ZnO films decreases due to the ion doping and weakens Fermi level pinning.
关键词： sol-gel method,Ion doping,Al-Zr-ZnO films,electrical properties,graphene
更新于2025-09-11 14:15:04
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Influence of different post-annealing temperatures on physical properties of La0.72Ca0.28MnO3:Ag0.2 thin films by pulsed laser deposition technique
摘要： La0.72Ca0.28MnO3:Ag0.2/LaAlO3 (100) thin ?lms, prepared by pulsed laser deposition, were post-annealed at di?erent temperatures in air. X-ray di?raction technique were used to analysize the orientation and lattice parameter, atomic force microscope (AFM) and scanning electronic microscope (SEM) were employed to characterize the surface morphology of the thin ?lms. Resistance vs. temperature (R-T) behaviors of the thin ?lms were tested with standard four-probe technique. The surface morphology results show that the grain size increases and crystalline quality of the ?lms are improved with increased annealing temperature up to 1200 °C, while the amount of grains also increases; R-T results illustrate that both the temperature coe?cient of resistance (TCR) and metal-insulator transition temperature (TMI) of the ?lms, increase with annealing temperature. In particular, TCR of thin ?lm (post-annealing at 1200 °C) reaches 28.8%·K?1, which makes such ?lms be promisingly applicated in thermal detectors near the room temperature.
关键词： Pulsed laser deposition technique,Electrical properties,La0.72Ca0.28MnO3:Ag0.2 thin ?lms,Surface morphology
更新于2025-09-11 14:15:04
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AIP Conference Proceedings [AIP Publishing 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Fes, Morocco (25–27 March 2019)] 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - P-type SiOx front emitters for Si heterojunction solar cells
摘要： We have applied p-type nanocrystalline silicon-oxide (p-SiOx) as front emitter in silicon heterojunction solar cells. The evolution of structural, optical, and electrical properties of p-SiOx as a function of the carbon-dioxide/silane flow rate ratio used in the gas mixture has been investigated, comparing also the film characteristics with those of p-type amorphous and nanocrystalline silicon thin films often used in the cells. Selected p-SiOx films with suitable electrical properties have been inserted in silicon heterojunction solar cells based on n-type FZ c-Si <100> wafers, passivated with ultrathin intrinsic a-Si:H buffers. Improvement of all the photovoltaic parameters has been observed with the emitter with higher oxygen content. The results have been correlated with the increased transparency and enhanced field-effect passivation obtained thanks to the presence of sufficient carbon dioxide in the gas mixture for the p-SiOx layer growth.
关键词： field-effect passivation,silicon heterojunction solar cells,p-type nanocrystalline silicon-oxide,optical and electrical properties,carbon-dioxide/silane flow rate ratio
更新于2025-09-11 14:15:04
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Investigations on photovoltaic performance of sol–gel derived BiFeO3-based heterostructures via compositional modification
摘要： In this paper, sol–gel is used to synthesize BiFeO3 (BFO), RGO/BFO, RGO/BFO/TiO2, TiCl4-modi?ed RGO/BFO/TiO2 and MAPI/RGO/BFO/TiO2 thin ?lms onto Pt/Ti/SiO2/Si substrate. RGO/BFO/TiO2 thin ?lm possesses high power conversion ef?ciency (g) of 3.11% and ?ll factor (FF) of 0.72, owing to the favorable effects of TiO2 and RGO on promoting electron transfer and electron injection, respectively. All the results indicate that BFO-based heterostructure thin ?lm is a promising candidate for designing solar energy devices.
关键词： Thin ?lms,Sol-gel preparation,Electrical properties
更新于2025-09-11 14:15:04
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Ultraviolet radiation-induced photovoltaic action in γ-CuI/β-Ga2O3 heterojunction
摘要： We report on the fabrication of γ-phase copper iodide (γ-CuI) and beta-gallium oxide (β-Ga2O3) heterostructure device and obtaining the ultraviolet (UV) radiation responsive photovoltaic action. The crystalline γ-CuI with predominant (111) plane orientation was deposited on the β-Ga2O3 by thermal evaporation process under vacuum condition. The electrical analysis revealed that the γ-CuI/β‐Ga2O3 heterojunction possess an excellent rectifying diode characteristic with high rectification ratio and turn-on voltage. The fabricated heterojunction device showed a photovoltaic action under solar-blind UV irradiation (254 nm) with outstanding photovoltage of 0.706 V and photocurrent of 2.49 mA/W. The device also showed a photovoltaic action under illumination of 365 nm and 300-400 nm wavelength of UV light, corresponding to absorption due to the γ-CuI layer. The UV irradiation-induced photovoltaic action in the γ-CuI/β‐Ga2O3 with outstanding photovoltage and excellent diode characteristics can be significant for self-powered UV photodetector applications.
关键词： Semiconductors,Electrical properties,Photovoltaic action,Copper iodide,Beta-gallium oxide,Solar-blind radiation
更新于2025-09-11 14:15:04
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Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation
摘要： The structure and electrical properties of transparent indium-oxide thin films produced by plasma-enhanced reactive thermal evaporation at different substrate temperatures are studied. It is found that the films have a grained structure. An increase in the substrate temperature yields a considerable increase in the conductivity of the films and a decrease in the photoconductivity-relaxation time. An interpretation of the effect of the substrate temperature on the observed changes in the electrical and photoelectric properties of the indium-oxide films under study is proposed.
关键词： indium-oxide thin films,electrical properties,substrate temperature,photoconductivity,plasma-enhanced reactive thermal evaporation
更新于2025-09-11 14:15:04
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Varistores à base de WO3 - revis?o
摘要： Varistors are elements that are part of electric power transmission and distribution systems or of special electrical installations. Varistors are manufactured in a wide variety of types, depending on their application, such as low-voltage devices with a layer of a few grains of thickness and low breakdown voltage, to varistors with a breakdown voltage of several kilovolts, such as those used in the lightning arresters of electric power distribution networks. Varistors, whose physical operation has been extensively studied, share common elements such as metal-semiconductor Schottky barrier junctions. Several studies have focused on the development of varistor ceramics for high and low voltage applications, including ZnO, SnO2, TiO2, and more recently, WO3-based ceramics. Unlike the first three compositions, WO3-based ceramics present an intrinsic varistor behavior because they contain monoclinic and triclinic phases. The addition of electron donor and acceptor dopants and heat treatments in different atmospheres also alter the non-linear properties of these systems, since they affect the formation of the Schottky barrier. This paper offers a review of the literature on the new varistor ceramic composition based on tungsten oxide (WO3).
关键词： electrical properties,WO3,varistors
更新于2025-09-11 14:15:04