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[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao, China (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Design of Power Clamp Circuit with Diode String and Feedback Enhanced Triggering in advanced SOI BCD Process
摘要： A novel power clamp circuit is proposed in this paper. By utilizing the feedback technology, BigFET turning on time is increased to 591ns which is 7 times as long as the traditional one. The layout area is efficiently occupied in the novel power clamp circuit which replaces the detective capacitor by a diode string. The proposed circuit has low leakage current and significant ESD performance validated in a 0.18μm SOI BCD process.
关键词： BigFET,power clamp circuit,feedback technology,Electrostatic discharge (ESD)
更新于2025-09-23 15:22:29
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Modeling and Simulation of Comprehensive Diode Behavior under Electrostatic Discharge Stresses
摘要： Diodes are effective devices for Electrostatic Discharge (ESD) protection. To accurately predict ESD robustness through circuit simulation of protection architectures in integrated circuits that use diodes, an enhanced model is proposed. This model is constructed with several compact model elements to simulate all physical device behaviors under high current transient ESD conditions, namely voltage overshoot, on-resistance variation, and thermal failure. The proposed model implements a thermal monitor, which can not only correlate current – voltage characteristics with the self-heating effect, but accurately predicts thermal failure under different pulse width conditions. The simulation results of this comprehensive diode model benchmarked against measurements are also reported.
关键词： junction thermal failure,Electrostatic discharge (ESD),thermal network,transmission line pulse (TLP),on-resistance variation,overshoot
更新于2025-09-23 15:21:21
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[IEEE 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Singapore (2018.7.16-2018.7.19)] 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - A Simple Method of Adjusting Trigger Voltage of HBT Device for ESD Protection
摘要： The trigger voltage of the HBT device is important for ESD protection. A method of adjusting the trigger voltage of SiGe Heterojunction Bipolar Transistor (HBT) device is proposed in this paper. The simulation and experiment results show that the trigger voltage of HBT can be simply adjusted by varying the emitter junction area.
关键词： Trigger voltage,Electrostatic discharge (ESD),Heterojunction bipolar transistor (HBT)
更新于2025-09-19 17:15:36