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Resonance reflection of light by ordered silicon nanopillar arrays with the vertical p-n junction
摘要： Silicon nanopillar (Si NP) arrays with the axial p-n junction were formed and investigated. A method to fabricate Si NP ordered arrays by means of electron beam lithography using the negative electron resist and reactive ion etching is presented. The effect of strong resonance light scattering – change of the color of separate Si NPs - was demonstrated. One or several minima were registered in the measured reflection spectra. Thereat, the position of reflection minimum was changed with a change in Si NP diameter. A shift of the minimum position towards the longer wavelength spectral region with an increase in Si NP diameter was observed. A shift of the position of minima to the shorter wavelength spectral region with a decrease in Si NP pitch in microarrays with the same Si NP diameter was observed. The quantitative divergence in the position of reflection minima in Si NPs with calculated dependencies for Mie resonances was found. High photosensitivity of Si NP arrays with axial p-n junction to visible and near IR light was discovered. So, these structures may be used for selective photonic sensors.
关键词： reflectance spectra,silicon nanopillars,electrophysical properties,reactive ion etching,electron beam lithography
更新于2025-09-23 15:23:52
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A method for alleviating the effect of pinhole defects in inter-metal dielectric films
摘要： As the insulation layers between two metal layers, inter-metal dielectric (IMD) films are widely used in integrated circuits (IC) and micro-electromechanical-systems (MEMS) devices. Commonly used IMD materials, such as silicon dioxide and silicon nitride, can be deposited on the metal surface using either physical vapor deposition (PVD) or chemical vapor deposition (CVD). However, due to the imperfections of deposition processes and surface cleanliness, defect-free of an IMD film cannot be guaranteed. As a common defect of an IMD film, pinhole is a tiny via of IMD film that can result in failures of short-circuit or current leakage between two metal layers and therefore decrease the fabrication yield. Reported methods for healing the pinhole defect require light-transmitting substrate, suspended structures, high-temperature annealing processes and none of them is universal. Therefore, we propose a metal etching method that uses metal etchants to etch the underlying metals through the pinholes of the IMD film. The etched area is reasonably larger than the pinhole; therefore, although the following upper metal deposition fills the pinhole, there is no electrical connection between the lower and upper metal features through the pinhole. Results of a series of experiments prove that the proposed method is feasible, valid, operable and reliable. Therefore, the proposed method is promising to be used for many IMD-based applications for either discovering pinholes or healing pinhole induced defects.
关键词： defect healing,thin film,inter-metal dielectric,pinhole,metal etching
更新于2025-09-23 15:23:52
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Study of the relationship between metal-assisted chemical etching and direction of the applied electric field
摘要： Metal-assisted chemical etching (MACE) has been proposed as a promising alternative for the fabrication of micro/nano-structures on silicon with simple process and low cost. Electric field can be applied during the reaction to control the motion of charged particles so as to accelerate the reaction and form uniform vertical trenches with high aspect ratio. In this paper, boron doped p-type (100) silicon wafers with resistivity of 20～30 Ω·cm was used as substrates. After coated with layers of 5 nm Ti and 10 nm Au, the silicon substrate was immersed into the etchant containing hydrofluoric acid (HF) and hydrogen peroxide (H2O2) with high HF-to-H2O2 concentration ratio (ρ) and an applied voltage of 40 volts. It was found that the direction of the applied electric field had a great influence on morphologies of the trenches. Deeper trenches with vertical sidewalls and relatively smoother bottom were observed when silicon substrate was connected to cathode of the power supply. Possible interpretation to these phenomena was proposed, and the effect of the electric field intensity and doping concentration was further studied.
关键词： trench morphology,metal-assisted chemical etching,electric field,HF-to-H2O2 ratio,electrode connection
更新于2025-09-23 15:23:52
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The effect of oxygen plasma treatment on the field emission properties of lanthanum hexaboride tip emitter
摘要： Polycrystal lanthanum hexaboride (LaB6) tip field emitter has been prepared using the electrochemical etching technique. The effects of oxygen plasma treatment on its morphology, structure and field emission properties are mainly discussed. The results reveal that the surface morphology of emitters did not change significantly after oxygen plasma treatment. The oxygen plasma treatment does not introduce any new phase into LaB6 emitter, but eliminates surface contaminants, which lead to lower work function. The cathode treated by 2 min shows the best emission performance during the field emission measurement. It obtains 8.2 μA at 2000 V, especially exhibiting strong ability of anti oxygen ion bombardment.
关键词： electrochemical etching,field emitter,lanthanum hexaboride
更新于2025-09-23 15:23:52
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[IEEE 2018 International Semiconductor Conference (CAS) - Sinaia, Romania (2018.10.10-2018.10.12)] 2018 International Semiconductor Conference (CAS) - Direct Writing Patterns for Gold Thin Film with DPN Technique
摘要： Dip-pen nanolithography combined with wet-chemical etching has been used to generate gold nanostructures with desired shapes and sizes. Self-assembled monolayers of 16-mercaptohexadecanoic acid have been patterned by DPN in different shapes: dots, lines and complex shapes, interdigits electrodes. AFM and LFM were used to measure the roughness of gold surface and to examine the thiol deposition and binding quality. These results show that DPN can be used as alternative method to generate different patterns used for complex devices, biosensor, and optoelectronic devices.
关键词： wet chemical etching,dip pen nanolithography,MHA,direct-write
更新于2025-09-23 15:22:29
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Domain imaging in Fe-doped KNbO3 single crystal via trinocular microscopy and scanning electron microscopy
摘要： Trinocular microscopy with a high spatial resolution is a promising technique for studying the surface morphology of materials. The cleavage face of ferroelectric Fe-doped K niobate (KNbO3) crystals was chemically etched by using HNO3. Trinocular microscopy was used to study the surface morphology of the grown ferroelectric KNbO3 single crystals. The grown surface of the crystal with a 60° domain wall revealed the same interaction and orientations. The results indicate that the type of domain walls that occur in ferroelectric crystals depend on the symmetry of both the nonferroelectric and ferroelectric phases of the crystal.
关键词： Trinocular microscopy,Single crystal,Etching technique,Domain wall
更新于2025-09-23 15:22:29
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[IEEE 2018 Wave Electronics and its Application in Information and Telecommunication Systems (WECONF) - Saint-Petersburg, Russia (2018.11.26-2018.11.30)] 2018 Wave Electronics and its Application in Information and Telecommunication Systems (WECONF) - MEMS Accelerometer with SAW
摘要： was created the model of a microaccelerometer using MEMS technology. Were investigated the sensitivity and non-linear properties of the MEMS sensor in the commercial temperature range.
关键词： microaccelerometer with SAW,slaser stimulated plasma etching,MEMS technology
更新于2025-09-23 15:22:29
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Thermal atomic layer etching: Mechanism, materials and prospects
摘要： In the semiconductors and related industries, the fabrication of nanostructures and nanopatterns has become progressive demand for achieving near-atomic accuracy and selectivity in etching different materials, particularly in ultra-thin gate dielectrics and ultra-thin channels used in field-effect transistors and other nanodevices below 10 nm scale. Atomic layer etching (ALE) is a novel technique for removing thin layers of material using sequential and self-limiting reactions. Different from most ALE processes using plasma-enhanced or other energetic particles-enhanced surface reactions, thermal ALE realizes isotropic atomic-level etch control based on sequential thermal-drive reaction steps that are self-terminating and self-saturating. Thermal ALE can be viewed as the reverse of atomic layer deposition (ALD), both of which define the atomic layer removal and growth steps required for advanced semiconductor fabrication. In this review, we focus on the concept and basic characteristics of the thermal ALE in comparison with ALD. Several typical thermal ALE mechanisms including fluorination and ligand-exchange, conversion-etch, oxidation and fluorination reactions are intensively introduced. The pros and cons of thermal ALE, plasma ALE, and traditional plasma etching are compared. Some representative materials and their typical thermal ALE processes are summarized. Finally, the outlook and challenges of thermal ALE are addressed.
关键词： Thermal atomic layer etching,Reaction mechanism,Atomic-scale precision,Atomic layer deposition,Self-limiting
更新于2025-09-23 15:22:29
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InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET
摘要： We demonstrated the fabrication of a densely packed InAs fins network for nanoelectronic applications. High crystalline quality GaSb/InAs layers have been grown directly on 300 mm nominal (001)-Si substrate. The InAs was then processed by etching step using a lithographic mask based on block copolymer to obtain sub-20nm width fins. This block copolymer has been optimized to self-assemble into lamellar structure with a period of 30nm, standing perpendicular to the substrate thanks to a neutral layer. STEM-HAADF characterization displays vertical sidewalls InAs fins with a width as low as 15nm spaced by almost 10nm. Early electrical characterizations exhibit a current flow through the connected fins.
关键词： B3 High electron mobility transistors,B3 Field effect transistors,A3 Organometallic vapor phase epitaxy,A1 Etching,B2 Semiconducting III-V materials
更新于2025-09-23 15:22:29
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The morphology evolution of selective area wet etched commercial patterned sapphire substrates
摘要： Patterned sapphire substrates (PSS) have been widely used to enhance the light output power of light emitting diodes (LEDs). The morphology and shape of the PSS have a great influence on the performance of the LEDs. In this work, commercial PSS is reprocessed utilizing selective-area wet etching approach, in which selective-area SiO2 mask is fabricated through partial exposure lithography instead of conventional overlay lithography. By precisely controlling the exposure time, the etching process can be controlled to take place only on the top of the PSS. Various surface morphology including pyramid, volcano, clover and closed-packaged inverted pyramid can be attained from the evolution of the selective-area etched PSS. The mechanism of the selective-area etched sapphire is correlated to the slant angle of the pattern surface and the SiO2 mask pattern.
关键词： Wet etching,Selective-area,Patterned sapphire substracte
更新于2025-09-23 15:22:29