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Mode-locked near-infrared thulium doped fibre laser using evanescent field effect with Bi <sub/>2</sub> O <sub/>3</sub> saturable absorber
摘要： Using the evanescent field effect, a high power passively mode-locked laser with a pulse duration of 1.85 ps and the pulse energy of 13.15 pJ is demonstrated. A Bi2O3 solution is used as a saturable absorber (SA) on a side polished fibre incorporated into a thulium doped fibre laser cavity for operation in the mid-infrared range. The 37.61% SA has a modulation depth and creates a highly stable mode-locked pulse output with a short pulse duration. The calculated net cavity dispersion at central wavelength is ?1.4 ps2, indicating operation is in the anomalous dispersion regime and confirmed by the presence of Kelly’s side-bands observed in the generated optical spectrum. Radio frequency analysis reveals a high signal to noise ratio, making this laser stable for use in telecommunication systems.
关键词： thulium doped fibre laser,evanescent field effect,Bi2O3 saturable absorber
更新于2025-11-28 14:23:57
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Solvent-exfoliation of transition-metal dichalcogenide MoS2 to provide more active sites for enhancing photocatalytic performance of BiOIO3/g-C3N4 photocatalyst
摘要： The ternary complex photocatalysts of BiOIO3/g-C3N4/MoS2 by solvent-exfoliation method was synthesized for the first time. In the typical procedure, the BiOIO3/g-C3N4 was obtained via hydrothermal synthesis technique, and then the BiOIO3/g-C3N4/MoS2 photocatalysts were prepared via ultrasonic solvent-exfoliation method from bulk commercial MoS2 in the alcohol solution. The samples of BiOIO3/g-C3N4/MoS2 were analyzed by PL, XRD and other characterization analysis methods. The photocatalytic activity of the as-prepared samples was investigated by removing gas phase mercury irradiation under visible light. The as-prepared BCM-0.3 exhibits excellent photocatalytic performance, being with the highest efficiency of 70.58%. Owing to the electronic channels of field-effect, an internal electric field was formed through the corresponding band-gap engineering, improving photocatalytic reaction. Besides, the excellent activity of the ternary photocatalysts BiOIO3/g-C3N4/MoS2 is attributed to heterostructure between BiOIO3/g-C3N4 and MoS2, which enlarges spectral response and improved separation efficiency of charge carriers, and MoS2-composing, which provides more active sites for catalytic oxidation. In addition, the as-prepared samples with excellent photocatalytic performance also offer a perspective insight into the hydrogen evolution, CO2 conversion and degradation of organic pollutants.
关键词： Photocatalytic,Solvent-exfoliation,Heterostructure,Oxidation,Field-effect
更新于2025-11-20 15:33:11
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Electronic transport in MoSe <sub/>2</sub> FETs modified by latent tracks created by swift heavy ion irradiation
摘要： Unique characteristics of transition metal dichalcogenides (TMDCs) such as their tunable band gap and ultra-thin body thickness make them potential candidates for applications in optoelectronic, gas sensing and energy storage devices. In this work, 1.8 GeV Ta ions at different ion fluences ranging from 1 × 109 ions cm?2 to 6 × 1010 ions cm?2 were used to introduce amorphous defective regions, latent tracks, in MoSe2 to study the electronic transport behavior in irradiated TMDC-channel field-effect transistors (FETs). Defects in these materials induced by the swift heavy ion irradiation play a vital role in the device applications. The results show that carrier mobility decreases while resistance of the devices increases abruptly with increasing ion fluences. The impact mechanism of the latent tracks on electronic transport behavior in TMDC-channel FETs was analyzed in detail. It was assumed that the Bloch wave of electrons was strongly localized by the latent tracks induced by the SHI irradiation and the Bloch wave of electrons can be scattered by the latent tracks as well. This study helps to investigate the influence of the latent tracks on electronic transport in other 2D materials as well.
关键词： latent track,field-effect transistor,molybdenum selenide,electronic transportation,swift heavy ion irradiation
更新于2025-11-14 17:03:37
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Flexible and stable organic field-effect transistors using low-temperature solution-processed polyimide gate dielectrics
摘要： Polyimide (PI) has been widely used as a gate dielectric due to its remarkable thermal stability, chemical resistance, and mechanical flexibility. However, the high processing temperature and high surface energy of PI gate dielectrics hinder the realization of flexible and reliable electronic applications with low-cost manufacturing. Here, a low-temperature solution-processed organic field-effect transistor (OFET) is successfully demonstrated using a fully imidized soluble PI gate dielectric. The low temperature processability of soluble PI gate dielectrics is confirmed by investigating the effect of annealing temperature on the dielectric properties and electrical characteristics. By blending 6,13-Bis(triisopropylsilylethynyl)pentacene with polystyrene, the reliability of OFET is considerably enhanced while maintaining high device performance. As a result, OFETs exhibit excellent flexibility and can be integrated with ultrathin parylene substrates without degrading device performance. This work presents the steps to develop flexible and reliable electronic applications with low-cost manufacturing.
关键词： organic field-effect transistors,solution-processed,polyimides,low-temperature,operational stability
更新于2025-11-14 15:19:41
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Performance improvement in photosensitive organic field effect transistor by using multi-layer structure
摘要： In this study, a new approach was introduced for Photo-OFETs as a multi-layer structure. Poly(3-hexylthiophene-2,5-diyl) regioregular (P3HT) and Copper(II) phthalocyanine (CuPc) thin films were used as two different active photo-absorber layers in the same device structure. Poly(methyl methacrylate) (PMMA) was used as a dielectric layer and all devices were fabricated with a top-gate bottom-contact configuration. In order to investigate the effect of the location of each layer on the Photoresponsive organic field-effect transistors (Photo-OFET) performance, five different devices in various structures were produced and analyzed. Surface properties of active layers have been investigated via Atomic Force Microscopy (AFM) and effects of surface roughness on device performance have been discussed. P3HT/CuPc/P3HT multi-layered structure exhibited the best performance in terms of photoresposivity(as 45 mA/W) and photosensitivity (~ 2x103). Photo-OFET based on a multi-layer structure demonstrated superior performance with wider absorbance spectrum region compared to conventional single component devices of P3HT or CuPc. The proposed multi-layer structure can be a model to improve the realization of high performance Photo-OFETs.
关键词： Photoresponsive organic field-effect transistors,Organic field effect transistors,Multilayer structure,Poly(3-hexylthiophene),Photosensitivity,Poly(methyl methacrylate)
更新于2025-09-23 15:23:52
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Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS <sub/>2</sub> Field-Effect Transistors
摘要： Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement is observed and explained in terms of positive charges trapped in the SiO2 gate oxide, during the irradiation. The transistor channel current is increased up to three order of magnitudes after the exposure to an irradiation dose of 100e-/nm2. Finally, a complete field emission characterization of the MoS2 flake, achieving emission stability for several hours and a minimum turn-on field of ≈ 20 V/μm with a field enhancement factor of about 500 at anode-cathode distance of ~1.5 μm, demonstrates the suitability of few-layer MoS2 as two-dimensional emitting surface for cold-cathode applications.
关键词： electron beam irradiation,2D materials,field emission,molybdenum disulfide,field effect transistors
更新于2025-09-23 15:23:52
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Exploiting electrostatic shielding-effect of metal nanoparticles to recognize uncharged small molecule affinity with label-free graphene electronic biosensor
摘要： Label-free electronic biosensors as the non-electrochemical analytical tools without requirement of sophisticated instrumentation have become attractive, although their application in competitive affinity sensing of uncharged small molecules is hindered by a difficulty in the development of competing analogues. To break through this bottleneck, we report a novel analogue made by epitope-modified metal nanoparticles to enable the electronic signaling of small-molecule analyte recognition via competitive affinity. While the electronic signaling capability of metal nanoparticle analogues is demonstrated by a graphene field-effect transistor bioassay of small-molecule glucose as a proof-of-principle, interestingly, we discover a new electronic signaling mechanism in the metal nanoparticle affinity, different to the intuitive charge accumulation expectation. On the basis of Kelvin-probe force microscopic potential characterization and theoretical discussion, we fundamentally elucidated the signaling mechanism as a seldom used electrostatic shielding-effect, that is, in the analogue-receptor affinity, metal nanoparticles with the charge density lower than receptor biomolecules can reduce the collective electrical potential via charge dispersion. Further consider the convenient epitope-modifiability of metal nanoparticles, the easy-to-develop analogues for diverse target analyte might potentially be predictable in the future. And the application of label-free electronic biosensors for the competitive affinity bioassay of range-extended small molecules may thus be promoted based on the electrostatic shielding-effect.
关键词： electrostatic shielding-effect,competitive affinity,graphene field-effect transistor biosensor,uncharged small molecule,metal nanoparticle analogue
更新于2025-09-23 15:23:52
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Modulation the electronic property of 2D monolayer MoS2 by amino acid
摘要： 2D molybdenum disulfide (MoS2) has a strong potential for the detection of biomolecules, however, the specific interactions between individual amino acids and MoS2 surface are still unclear. Herein, the adsorption properties and electronic structures of amino acid/MoS2 systems were investigated systematically for the 20 standard amino acids based on density functional theory. The adsorption strength of amino acids on MoS2 monolayer decreases in the following order: TRP > ARG > PHE > TYR > LYS > HIS > PRO > ASN > MET > LEU > ILE > VAL > GLU > GLN > THR > ASP > CYS > SER > ALA > GLY. The band gap of amino acid/MoS2 system is determined by the energy level of HOMO orbit of the adsorbed amino acid, in which the higher energy level of HOMO orbit will result in a smaller band gap. As proof of concept, optical and electrical detection of the MoS2 based transistors with and without amino acid molecules (TRP and CYS) were studied. Adsorption of amino acids on a MoS2 surface allows their chemical information to be transformed into distinct analytically optical and electronic signals, which opens up new possibilities for fabricating novel MoS2 based highly selective biosensors.
关键词： Amino acid,MoS2,Density functional theory,Field effect transistors
更新于2025-09-23 15:23:52
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A New A-D-A’-D-A Conjugated Molecule Entailing Diazapentalene Unit for n-Type Organic Semiconductor
摘要： Conjugated molecules with low lying LUMO levels are demanding for the development of air stable n-type organic semiconductors. In this paper, we report a new A-D-A’-D-A conjugated molecule (DAPDCV) entailing diazapentalene (DAP) and dicyanovinylene groups as electron accepting units. Both theoretical and electrochemical studies manifest that the incorporation of DAP unit in the conjugated molecule can effectively lower the LUMO energy level. Accordingly, thin film of DAPDCV shows n-type semiconducting behaviour with electron mobility up to 0.16 cm2·V-1·s-1 after thermal annealing under N2 atmosphere. Moreover, thin film of DAPDCV also shows stable n-type transporting property in air with mobility reaching 0.078 cm2·V-1·s-1.
关键词： organic field-effect transistors,dicyanovinylene groups,n-type semiconductors,diazapentalene
更新于2025-09-23 15:23:52
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Determination of Selectivity Coefficients of Sodium and Potassium Ion-Selective Electrode Using Porous Silicon N-Type (100) Based Extended Gate Field Effect Transistor
摘要： Determination of Selectivity Coefficients of Sodium and Potassium Ion-Selective Electrode Using Porous Silicon N-Type (100) Based Extended Gate Field Effect Transistor
关键词： Sodium,Selectivity Coefficients,Porous Silicon,Extended Gate Field Effect Transistor,Ion-Selective Electrode,Potassium
更新于2025-09-23 15:23:52