- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Differential Dual-Band Superconducting Bandpass Filter Using Multimode Square Ring Loaded Resonators With Controllable Bandwidths
摘要： In this paper, a fourth-order dual-band high-temperature superconducting (HTS) differential bandpass filter (BPF) with controllable midband frequencies and bandwidths is developed by using modified multimode square ring loaded resonators (SRLRs). The differential-mode (DM) bisection and common-mode (CM) bisection of the modified SRLR are analyzed by using the even- and odd-mode method twice, and the corresponding resonant properties are obtained. With a proper design of the modified SRLR, two lowest DM resonances are chosen to construct two DM passbands with high in-band CM suppression. The DM resonances can be adjusted flexibly after adding tunable patches to the square ring. Meanwhile, the internal coupling between two modified SRLRs can be controlled separately by using two geometrical parameters. Consequently, the proposed dual-band BPF can achieve independent control of both the midband frequencies and the bandwidths of its two passbands. Moreover, a wideband CM suppression is realized by a combined use of an appropriately selected feeding structure and a frequency discrepancy technique. A fourth-order dual-band differential BPF is designed with two passbands operating at 2.325 and 4.900 GHz, respectively. The filter is fabricated using HTS YBCO thin films on a MgO substrate. Good agreement between the simulated and measured frequency responses are observed, verifying well the proposed structure and design method.
关键词： Bandpass filter (BPF),square ring loaded resonator (SRLR),high-temperature superconducting (HTS),differential,dual-band
更新于2025-09-09 09:28:46
-
Experimental framework for evaluation of the thermodynamic and kinetic parameters of metal-oxides for solar thermochemical fuel production
摘要： The two-step metal oxide redox cycle is a promising and thermodynamically attractive means of solar fuel production. In this work, we describe the development of a high-temperature tubular reactor in which the fundamental thermodynamic and kinetic behaviour of thermochemical materials can be readily assessed. This reactor system is capable of operating at temperatures up to 1873 K, total pressures ranging from vacuum to ambient, and oxygen partial pressures (pO2) as low as 10-29 atm. Compared to off-the-shelf systems like thermogravimetric analyzers (TGA) or indirect conductivity-based measurement systems, this system has three inherent benefits: (1) the flexibility to control the sample morphology (e.g. powder, packed bed, reticulated porous ceramic, or pellet), (2) the potential for a well-developed and characterized flow, and (3) the ability to readily customize the system on demand (e.g. easy integration with a steam generator to control and operate at very low pO2). The reactor system and experimental methods were validated by performing isothermal relaxation experiments with undoped ceria, wherein the sample environment was rapidly altered by stepwise changes in the delivered H2O vapor concentration, and comparing measured oxygen nonstoichiometries with accepted data available in the literature. Data was measured at temperatures from 1173-1473 K and pO2 from 4.54×10-18-1.02×10-9 atm. The measured equilibrium data displayed strong agreement with the literature and the expected trends were preserved. Kinetic data was extracted by first transforming reactant concentrations measured downstream of the reaction zone using a tanks-in-series mixing model to account for gas dispersion. Next, a mechanistic kinetic model distinguishing surface and bulk species concentrations was fit to the data to extract pertinent thermodynamic and kinetic parameters. The model assumed a two-step reaction mechanism mediated by the formation of an intermediate hydroxyl species on the surface. Activation energies and defect formation enthalpies and entropies for the forward and reverse reactions were found to be in good agreement with previous modelling efforts, providing further validation of the use of this system to explore thermodynamic and kinetic behaviour of emerging thermochemical materials.
关键词： thermodynamic and kinetic parameters,undoped ceria,solar fuel production,metal oxide redox cycle,high-temperature tubular reactor
更新于2025-09-09 09:28:46
-
[ASME ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems - San Francisco, California, USA (Monday 27 August 2018)] ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems - Assessment of Damage Progression in Automotive Electronics Assemblies Subjected to Temperature and Vibration
摘要： Electronics in automotive underhood environments is used for a number of safety critical functions. Reliable continued operation of electronic safety systems without catastrophic failure is important for safe operation of the vehicle. There is need for prognostication methods, which can be integrated, with on-board sensors for assessment of accrued damage and impending failure. In this paper, leadfree electronic assemblies consisting of daisy-chained parts have been subjected to high temperature vibration at 5g and 155°C. Spectrogram has been used to identify the emergence of new low frequency components with damage progression in electronic assemblies. Principal component analysis has been used to reduce the dimensionality of large data-sets and identify patterns without the loss of features that signify damage progression and impending failure. Variance of the principal components of the instantaneous frequency has been shown to exhibit an initial damage progression, increasing trend during the attaining a maximum value and decreasing prior to failure. The unique behavior of the instantaneous frequency over the period of vibration can be used as a health-monitoring feature for identifying the impending failures in automotive electronics. Further, damage progression has been studied using Empirical Mode Decomposition (EMD) technique in order to decompose the signals into Independent Mode Functions (IMF). The IMF’s were investigated based on their kurtosis values and a reconstructed strain signal was formulated with all IMF’s greater than a kurtosis value of three. PCA analysis on the reconstructed strain signal gave better patterns that can be used for prognostication of the life of the components.
关键词： high temperature vibration,prognostication,Empirical Mode Decomposition,spectrogram,kurtosis,automotive electronics,principal component analysis
更新于2025-09-09 09:28:46
-
Gallium Oxide || Ga2O3-based gas sensors
摘要： β-Ga2O3 has recently gained a lot of interest for applications in solar-blind deep ultraviolet (UV) detectors and high-power electronics at elevated temperatures. The interest stems from its intrinsic material properties, such as wide-bandgap nature (4.9 eV) and high breakdown electric field. β-Ga2O3 can also serve as a reactive oxide layer, sensitive to a wide variety of gases, especially at high temperatures in harsh environments. Many β-Ga2O3-based gas sensors have been reported recently [1–20]. In this chapter, the gas sensing mechanism and the sensing characteristics of β-Ga2O3 are reviewed. First, the material properties of β-Ga2O3 are reviewed for a clear understanding of surface reactions at oxide surfaces with various gas molecules. The crystal structure of β-Ga2O3 and the surface atomic configurations of 201 and (010)-oriented β-Ga2O3 are investigated. The wet and dry etching characteristics and the metal contact properties of 201 and (010) β-Ga2O3 single crystals are discussed for a broad range of device applications. Recent reports of β-Ga2O3-based hydrogen sensors are discussed, and the hydrogen sensing properties of 201 and (010) β-Ga2O3 single crystals are compared for enhanced hydrogen detection.
关键词： crystal structure,β-Ga2O3,high-temperature applications,wet and dry etching,Ohmic contact,gas sensors,hydrogen sensors
更新于2025-09-09 09:28:46
-
Charge-stripe crystal phase in an insulating cuprate
摘要： High-temperature (high-Tc) superconductivity in cuprates arises from carrier doping of an antiferromagnetic Mott insulator. This carrier doping leads to the formation of electronic liquid-crystal phases. The insulating charge-stripe crystal phase is predicted to form when a small density of holes is doped into the charge-transfer insulator state, but this phase is yet to be observed experimentally. Here, we use surface annealing to extend the accessible doping range in Bi-based cuprates and realize the lightly doped charge-transfer insulating state of the cuprate Bi2Sr2CaCu2O8+x. In this insulating state with a charge transfer gap on the order of ~1 eV, our spectroscopic imaging scanning tunnelling microscopy measurements provide strong evidence for a unidirectional charge-stripe order with a commensurate 4a0 period along the Cu–O–Cu bond. Notably, this insulating charge-stripe crystal phase develops before the onset of the pseudogap and formation of the Fermi surface. Our work provides fresh insight into the microscopic origin of electronic inhomogeneity in high-Tc cuprates.
关键词： spectroscopic imaging scanning tunnelling microscopy,electronic inhomogeneity,cuprates,charge-stripe crystal phase,high-temperature superconductivity
更新于2025-09-09 09:28:46
-
A 4H-SiC BJT as a Switch for On-chip Integrated UV Photodiode
摘要： This paper presents the design, fabrication and characterization of a 4H-SiC n-p-n bipolar junction transistor as a switch controlling an on-chip integrated p-i-n photodiode. The transistor and photodiode share the same epitaxial layers and topside contacts for each terminal. By connecting the collector of the transistor and the anode of the photodiode, the photo current from the photodiode is switched off at low base voltage (cut-off region of the transistor) and switched on at high base voltage (saturation region of the transistor). The transfer voltage of the circuit decreases as the ambient temperature increases (2 mV/?C). Both the on-state and off-state current of the circuit have a positive temperature coef?cient and the on/off ratio is >80 at temperature ranged from 25 ?C to 400 ?C. It is proposed that the on/off ratio can be increased by ～1000 times by adding a light blocking layer on the transistor to reduce light induced off-state current in the circuit.
关键词： photodiode,switch,BJT,4H-SiC,UV,high temperature
更新于2025-09-08 13:48:38
-
Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices
摘要： Temperature-dependent threshold voltage (Vth) stability is a significant issue in the practical application of semi-conductor power devices, especially when they are undergoing a repeated high-temperature operation condition. The Vth analytical model and its stability are dependent on high-temperature operations in wide-bandgap gallium nitride (GaN)-based high electron mobility transistor (HEMT) devices that were investigated in this work. The temperature effects on the physical parameters—such as barrier height, conduction band, and polarization charge—were analysed to understand the mechanism of Vth stability. The Vth analytical model under high-temperature operation was then proposed and developed to study the measurement temperatures and repeated rounds dependent on Vth stability. The validity of the model was verified by comparing the theoretical calculation data with the experimental measurement and technology computer-aided design (TCAD) simulation results. This work provides an effective theoretical reference on the Vth stability of power devices in practical, high-temperature applications.
关键词： high-temperature operation,gallium nitride (GaN),analytical model,high electron mobility transistors (HEMTs),threshold voltage (Vth) stability
更新于2025-09-04 15:30:14
-
High-temperature high pressure synthesis of monoclinic Y2O3
摘要： In this work, synthesis of cubic Y2O3 by calcining yttrium based coordination polymer (Y-CP) which were obtained by microwave-assisted method was reported. Monoclinic Y2O3 was obtained by treating the cubic Y2O3 under high temperature high pressure (HTHP) on a large volume cubic multi-anvil high pressure apparatus. The effect of temperature on the preparation was studied. The morphology and crystal phase of all samples have been characterized by the scanning electron microscope (SEM), X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR) spectra. What more, the photoluminescence (PL) property of the Y2O3: Eu3+ sample was investigated. This method can be used to prepare other rare earth oxide with various phase.
关键词： Coordination polymer,luminescence,Y2O3,high temperature high pressure,Phase transformation
更新于2025-09-04 15:30:14
-
Semiconducting polymer blends that exhibit stable charge transport at high temperatures
摘要： Although high-temperature operation (i.e., beyond 150°C) is of great interest for many electronics applications, achieving stable carrier mobilities for organic semiconductors at elevated temperatures is fundamentally challenging. We report a general strategy to make thermally stable high-temperature semiconducting polymer blends, composed of interpenetrating semicrystalline conjugated polymers and high glass-transition temperature insulating matrices. When properly engineered, such polymer blends display a temperature-insensitive charge transport behavior with hole mobility exceeding 2.0 cm2/V·s across a wide temperature range from room temperature up to 220°C in thin-film transistors.
关键词： semiconducting polymer blends,charge transport,thermal stability,high-temperature operation,organic semiconductors
更新于2025-09-04 15:30:14
-
Modeling and Experimental Analysis on the Temperature Response of AlN-Film Based SAWRs
摘要： The temperature responses of aluminum nitride (AlN) based surface acoustic wave resonator (SAWR) are modeled and tested. The modeling of the electrical performance is based on a modified equivalent circuit model introduced in this work. For SAWR consisting of piezoelectric film and semiconducting substrate, parasitic parameters from the substrate is taken into consideration for the modeling. By utilizing the modified model, the high temperature electrical performance of the AlN/Si and AlN/6H-SiC based SAWRs can be predicted, indicating that a substrate with a wider band gap will lead to a more stable high temperature behavior, which is further confirmed experimentally by high temperature testing from 300 K to 725 K with SAWRs having a wavelength of 12 μm. Temperature responses of SAWR’s center frequency are also calculated and tested, with experimental temperature coefficient factors (TCF) of center frequency being ′29 ppm/K and ′26 ppm/K for the AlN/Si and AlN/6H-SiC based SAWRs, which are close to the predicted values.
关键词： equivalent circuit modeling,aluminum nitride,surface acoustic resonators,high temperature response
更新于2025-09-04 15:30:14