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Structural and Electrical Investigation of Cobalt-Doped NiOx/Perovskite Interface for Efficient Inverted Solar Cells
摘要： Inorganic hole-transporting materials (HTMs) for stable and cheap inverted perovskite-based solar cells are highly desired. In this context, NiOx, with low synthesis temperature, has been employed. However, the low conductivity and the large number of defects limit the boost of the e?ciency. An approach to improve the conductivity is metal doping. In this work, we have synthesized cobalt-doped NiOx nanoparticles containing 0.75, 1, 1.25, 2.5, and 5 mol% cobalt (Co) ions to be used for the inverted planar perovskite solar cells. The best e?ciency of the devices utilizing the low temperature-deposited Co-doped NiOx HTM obtained a champion photoconversion e?ciency of 16.42%, with 0.75 mol% of doping. Interestingly, we demonstrated that the improvement is not from an increase of the conductivity of the NiOx ?lm, but due to the improvement of the perovskite layer morphology. We observe that the Co-doping raises the interfacial recombination of the device but more importantly improves the perovskite morphology, enlarging grain size and reducing the density of bulk defects and the bulk recombination. In the case of 0.75 mol% of doping, the bene?cial e?ects do not just compensate for the deleterious one but increase performance further. Therefore, 0.75 mol% Co doping results in a signi?cant improvement in the performance of NiOx-based inverted planar perovskite solar cells, and represents a good compromise to synthesize, and deposit, the inorganic material at low temperature, without losing the performance, due to the strong impact on the structural properties of the perovskite. This work highlights the importance of the interface from two di?erent points of view, electrical and structural, recognizing the role of a low doping Co concentration, as a key to improve the inverted perovskite-based solar cells’ performance.
关键词： hole transport material,inverted planar perovskite solar cell,perovskite morphology,Co-doped NiOx,electrical conductivity
更新于2025-09-23 15:21:01
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Rare earth ions doped NiO hole transport layer for efficient and stable inverted perovskite solar cells
摘要： Hole transport layer plays a critical role in achieving high performance and stable inverted perovskite solar cells (PSCs). Doping has been proved to be an effective strategy to modify the electrical and optical properties of semiconductor oxides. Herein, rare earths (REs: Ce, Nd, Eu, Tb, and Yb) elements are systemically doped into the NiOx hole transport layer (HTL) via a simple solution-based method. The results demonstrate that the REs doping could considerably modify the compactness, conductivity, and band alignment of the NiOx HTL, leading to the highly improved permanence of the inverted PSCs. The PSCs using 3% Eu:NiOx HTL yielded the optimum power conversion efficiency of 15.06%, relatively improved 23.4% compared with the PSC using pristine NiOx HTL (12.20%). It also demonstrated much better long time stability. The improved photovoltaic properties of the device can be attributed to the more efficient charge extraction and suppressed interfacial recombination rate by the introduction of appropriate REs in the NiOx HTL. This work indicates that RE doping is a very effective and promising strategy to achieve adjustable hole extraction material for high and stable inverted PSCs.
关键词： Rare earth ions,Perovskite solar cells,Doped NiOx film,Inverted planar structure
更新于2025-09-19 17:13:59
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Effects of interfacial energy level alignment on carrier dynamics and photovoltaic performance of inverted perovskite solar cells
摘要： Metal doping is an efficient method for optimizing NiOx as hole transport material in the inverted perovskite solar cells, which can contribute to the optimization of the interfacial energy level alignment, while the underlying influencing mechanism on the charge carrier dynamics and device performance needs to be further elucidated. In this work, NiOx films with modulated energy levels are obtained via Li doping and examined by ultraviolet photoelectron spectrometer. The effects of the energy level alignment of NiOx on the carrier transfer and recombination dynamics are elucidated by transient photovoltage/photocurrent and transient fluorescence dynamics. The Li doping can significantly shift the valence band of NiOx downward, and the 4% Li content endows NiOx with the optimal energy level matching with perovskite and the best charge separation/transfer ability, which can be confirmed through the photoluminescence results. The corresponding device possesses superior photovoltaic parameters with the champion power conversion efficiency of 17.34%, 37% higher than device based on pure NiOx. The results highlight that proper metal doping can optimize the energy level of the hole transport material to well match the perovskite, thus efficiently promoting charge separation and inhibiting charge recombination, which leads to the enhancement of the device performances.
关键词： Li-doped NiOx,Inverted perovskite solar cell,Charge transport/recombination dynamics,Energy level alignment
更新于2025-09-19 17:13:59