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Synthesis of immobilized cerium doped ZnO nanoparticles through the mild hydrothermal approach and their application in the photodegradation of synthetic wastewater
摘要： The difficulty associated with accessing water resources, wastewater treatment and recycling are crucial subjects of research. In this regards the present research focuses on the synthesis, characterization, and photodegradation of synthetic wastewater by immobilized cerium doped ZnO nanoparticles. This was an experimental study at laboratory scale. The nanoparticles were synthesized through the mild hydrothermal technique and characterized by Fourier-transform infrared spectroscopy (FTIR), X-ray powder diffraction (XRD), Scanning electron microscope (SEM), Energy dispersive spectroscopy (EDS), and Photoluminance analyses (PL). In addition, a reactor was designed and constructed for the photodegradation of the synthetic beverage effluent at laboratory scale. The fabricated nanoparticles were fixed on sand-blast glasses. The experiments were conducted by examining the parameters of doping percentage, pH, nanoparticle density, initial density of the wastewater sample, as well as exposure time to ultraviolet light and sunlight illumination. The doping molar percentage of cerium oxide in the photodegradation of the synthetic wastewater was shown to be effective, and the optimal percentage was observed at 1%. The results showed higher efficiency under the visible light illumination. Increasing the concentration of the effluent from 500 to 3000 mg/L resulted in the reduction of efficiency from 65.14 to 21.9 % under ultraviolet light and from 42.13 to 10.12% under visible light illumination. It was also found that increasing the exposure time would increase the efficiency of the wastewater photodegradation. The immobilized cerium doped zinc oxide nanoparticles showed excellent crystallinity and were well-dispersed.
关键词： Nanocatalysts,doping,immobilization,industrial wastewater,sunlight.
更新于2025-09-23 15:23:52
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Highly efficient green upconversion luminescence of ZnMoO4:Yb3+/Er3+/Li+ for accurate temperature sensing
摘要： Upconversion luminescence and optical temperature sensing properties of Yb3+/Er3+/Li+ tri-doped ZnMoO4 phosphors were investigated. It has been demonstrated that Li+ doping affected not only the local symmetry of Yb3+ and Er3+ but also the distribution of them in the host lattice. As a result, the significantly improved green upconversion luminescence was obtained when excited at 980 nm. The pumping power dependent photo-thermal behavior was used to evaluate the reliability of upconversion temperature sensing. An accurate temperature scale was established by eliminating the impact of thermal effect, and the sensing ability was evaluated via a comparison with the results reported in literatures.
关键词： Li+ doping,Upconversion luminescence,Thermal effect,Temperature sensing,ZnMoO4
更新于2025-09-23 15:23:52
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Introduction of oxygen vacancies into hematite in local reducing atmosphere for solar water oxidation
摘要： Sn Doping and creation of oxygen vacancies have been adopted universally to overcome the poor electric conductivity and unfavorable hole diffusion length of α-Fe2O3 photoanodes. Generally, Sn doping is realized via longitudinal migration of tin element from FTO (fluorine-doped tin oxide) substrates into α-Fe2O3 at high temperature. To introduce oxygen vacancies along with Sn into hematite for further promoting its electric conductivity, we have created a local reducing atmosphere via partial oxidation of graphite while doping hematite with Sn. The donor density of the resultant Fe2O3 photoanode annealed on graphite (G-Fe2O3) at 770 °C for 20 min is increased to ～1.7 times that of the counterpart annealed on SiO2 powders (S-Fe2O3), indicating that the electric conductivity of hematite is improved after introduction of oxygen vacancies. Moreover, oxygen vacancies have been demonstrated to significantly reduce the charge transfer resistance of Sn doped hematite. Consequently, the photocurrent density of G-Fe2O3 is enhanced remarkably (～70%) compared with S-Fe2O3. However, the improvement in photocurrent density due to oxygen vacancies becomes less significant when more Sn is doped into hematite. The strategy for creation of oxygen vacancies reported here can be extended to other photoanodes for better understanding the effect of oxygen vacancies on PEC performance.
关键词： Oxygen vacancies,Sn doping,Solar water oxidation,Hematite
更新于2025-09-23 15:23:52
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Effect of Na doping on structural and optical properties in Cu2ZnSnS4 thin films synthesized by thermal evaporation method
摘要： Quaternary chalcogenide Cu2ZnSnS4 (CZTS) compound, a potential material for application as absorber layer in thin film solar cells, is synthesized by direct melting of the constituent elements taken in stoichiometry compositions. Alkali element Na was incorporated into CZTS thin films synthesized by thermal evaporation method, in order to further improve the structural and optical properties. X-Ray diffraction (XRD), Raman spectroscopy, Energy dispersive spectrometry and optical spectrophotometry were used to characterise the phase purity and optical properties. It showed that the diffusion of Na ions is uniform in the films after annealing. XRD analysis showed that CZTS films possess polycrystalline structure with [221] preferred orientation. Na ions incorporation in CZTS thin films could improve the cristallinity, the graine size and the absorption coefficient. For CZTS: Na 5%, optical results revealed higher absorption coefficient (>105 cm-1) and direct optical band gap of 1.56 eV with p-type conductivity.
关键词： Semiconductors,Sodium doping,Structural properties,Optical properties,Copper zinc tin sulfide,Thin films,Thermal evaporation
更新于2025-09-23 15:23:52
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Vacancy-Driven Robust Metallicity of Structurally Pinned Monoclinic Epitaxial VO <sub/>2</sub> Thin Films
摘要： Vanadium dioxide (VO2) is a strongly-correlated material with 3d-electrons, which exhibits temperature-driven insulator-to-metal transition with a concurrent change in the crystal symmetry. Interestingly, even modest changes in stoichiometry-induced orbital occupancy dramatically affect the electrical conductivity of the system. Here, we report a successful transformation of epitaxial monoclinic VO2 thin films from a conventionally insulating to permanently metallic behavior by manipulating the electron-correlations. These ultrathin (~10 nm) epitaxial VO2 films were grown on NiO (111)/Al2O3 (0001) pseudomorphically, where the large misfit between NiO and Al2O3 were fully relaxed by domain matching epitaxy. Complete conversion from an insulator to permanent metallic phase is achieved through injecting oxygen vacancies (x~0.20±0.02) into the VO2-x system via annealing under high vacuum (~5x10-7 Torr) and elevated temperature (450 oC). Systematic introduction of oxygen vacancies partially converts V4+ to V3+ and generates unpaired electron charges which result in the emergence of donor states near Fermi level. Through the detailed study of the vibrational modes by Raman spectroscopy, hardening of the V-V vibrational modes and stabilization of V-V dimers are observed in vacuum-annealed VO2 films providing conclusive evidence for stabilization of monoclinic phase. This ultimately leads to convenient free-electron transport through the oxygen-deficient VO2-x thin films resulting in the metallic character at room temperature. With these results, we propose a defect engineering driven pathway through the control of oxygen vacancies to tune electrical and optical properties in epitaxial monoclinic VO2.
关键词： Defect engineering,Oxygen Vacancy,Metallicity,Mott transition,Metallic monoclinic VO2,Charge doping
更新于2025-09-23 15:23:52
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Revealing the role of kapok fibre as bio-template for In-situ construction of C-doped g-C3N4@C, N co-doped TiO2 core-shell heterojunction photocatalyst and its photocatalytic hydrogen production performance
摘要： For the first time, C-doped g-C3N4@C, N co-doped TiO2 core-shell heterojunction photocatalyst was successfully prepared by an in-situ one-pot hydrothermal bio-template approach, assisted by calcination treatment at 500?°C. Kapok fibre was used as a bio-templates and in-situ C doping in g-C3N4 and TiO2 during the formation of core-shell heterojunction photocatalyst. Moreover, the used of urea as g-C3N4-precursor also contribute to band-gap narrowing by an in-situ carbon and nitrogen doping in TiO2. Various characterisation techniques were employed to understand the effect TiO2 precursor concentration on the evolution of core-shell nanostructure heterojunction photocatalyst that can affect and boost the catalytic activity. The detailed understanding of the concurrent growth of C-doped g-C3N4 (CCN) and C, N co-doped TiO2 mechanism, as well as the formation of core-shell nanostructures heterojunction formation, are also proposed in this study. Our finding indicated that the bio-template core-shell nanostructure heterojunction photocatalysts showed a dramatic increase in photoinduced electron-hole separation efficiency as demonstrated by the photoelectrochemical and photoluminescence analyses. The enhancement in photogenerated charge carrier separation and narrower band gap resulted in superior photocatalytic activities with the highest rate of hydrogen production was recorded by CCN/T-1.5 sample (625.5 μmol h-1 g-1) in methanol aqueous solution. The well-developed interconnected heterojunction formation with appropriate CCN and TiO2 contents in core-shell nanoarchitectures system is a prime factor for the future design of a highly efficient visible-light-driven photocatalyst.
关键词： Bio-template,Heterojunction photocatalyst,Core-shell,Co-doping,Photocatalytic hydrogen production,Visible light
更新于2025-09-23 15:23:52
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Ultrasound-Assisted Nitrogen and Boron Co-doping of Graphene Oxide for Efficient Oxygen Reduction Reaction
摘要： Development of naturally abundant, low cost, and energy-efficient electrocatalysts for the oxygen reduction reaction (ORR) is essential for commercialization of fuel cells. In this work, we report simple ultrasonication assisted synthesis of nitrogen and boron dual-doped graphene oxide (NB/GO) and demonstrate its application as an effective ORR catalyst realizing predominantly 4e? reduction of O2 to OH? in 0.1 M KOH. Enhanced ORR electrocatalysis of the dual B and N co-doped GO as opposed to GO singly doped with B or N arises from the synergistic interaction of the boron and nitrogen species. The content and configuration of both N and B dopants can be readily tailored by controlling the ultrasonic conditions, thereby permitting tuning of the ORR activity. Furthermore, the developed NB/GO metal-free catalyst exhibited very promising long-term durability and resistance to methanol poisoning compared to the state of the art Pt/C catalyst.
关键词： Oxygen reduction reaction,Graphene,Doping,Electrocatalysis
更新于2025-09-23 15:23:52
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Bandgap Tuning of C3N monolayer: A First-Principles Study
摘要： The newly found graphene-like material C3N exhibits great potential in a variety of important applications, due to its unique topological and electronic structures. To extend the utilization, a crucial challenge is to make its intrinsic bandgap (1.03 eV) tunable. Here we performed first-principles calculations to investigate the band structure variations of C3N monolayer under various surface modification treatments, including defect engineering, surface decoration and substitutional doping. Results show that those treatments can induce impurity states, orbital rehybridization, and n- or p-type doping simultaneously, and therefore enable effective band structure adjustment. Importantly, some linear relationships between the bandgap and doping concentration are revealed, paving the way for precise control of C3N bandgap.
关键词： Bandgap tuning,substitutional doping,defect engineering,surface decoration,g-C3N
更新于2025-09-23 15:23:52
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Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates
摘要： P-type doping using Mg is essential for realizing a variety of electronic and optoelectronic III-nitride devices involving hetero-epitaxial thin films that also contain a significant number of dislocations. We report on the effect of Mg incorporation on dislocation and stress evolution during the growth of GaN thin films by using in situ curvature measurements and ex situ transmission electron microscopy. A complete picture involving the interplay between three effects—dopant size effect, dislocation bending, and polarity inversion—is presented. Mg aids dislocation bending, which in turn generates tensile stresses in Mg-doped GaN films. As a result, the compressive stress expected due to the dopant size difference effect can only be discerned clearly in films with dislocation densities below 5 × 10^9 cm^?2. Polarity inversion at doping exceeding 10^19 cm^?3 is associated with a sharp drop in screw dislocation density. A kinetic stress evolution model has been developed to capture dislocation bending and size difference effects, and a match between calculated bending angle from the model and that measured from TEM images is obtained.
关键词： Mg doping,stress evolution,dislocation bending,in situ curvature measurements,transmission electron microscopy,polarity inversion,GaN
更新于2025-09-23 15:23:52
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Stoichiometric and non-stoichiometric tungsten doping effect in bismuth vanadate based photoactive material for photoelectrochemical water splitting
摘要： In photoelectrochemical (PEC) water splitting, BiVO4 has attracted attention due to its favorable band gap but it suffers low PEC performance due to poor conductivity. The vast majority of publications on this system has examined doping of stoichiometric composition of tungsten (W) on this system to increase bulk and interfacial conductivity while managing the contaminant generation of crystallographic defects and recombination sites. In this paper, a deep investigation was carried out to examine the effect of non-stoichiometric W doping in BiVO4 system. Stoichiometric and non-stoichiometric W-doped monoclinic BiVO4 (i.e. Bi1-(xtd)V1-xWxtdO4; BiV1-xWxtdO4 and BiV1-yWyO4; x ? 0.008; y ? 0.03 and d ? 0.005) were prepared using a facile dip coating technique. The stoichiometric composition contains charge balanced Bi, V and W atoms whereas non-stoichiometric compositions contain excess Bi and excess Bi and W. The non-stoichiometric composition BiV1-xWxtdO4 has shown better photoelectrochemical water splitting performance with respect to other compositions at 1.23 V vs RHE, under one sun illumination of electrode. The XRD and XPS results shows that non-stoichiometric doping with excess Bi or with excess Bi and W can possibly create an environment where V5t ions are substitutional replaced by W6t ions without generating other defects. But there was no signi?cant difference in band gap of different compositional samples observed. Further electrochemical impedance technique was used to analyze change in bulk and surface charge mobility with W-doping in BiVO4. The electrochemical impedance analysis showed the presence of low interfacial resistance, lower charge transfer resistance and high charge donor/surface state density for non-stoichiometric composition BiV1-xWxtdO4 electrode. It is evident from and cyclic voltammetry that the addition of excess Bi and W from its stoichiometric quantity ef?ciently suppressed the formation of hole-electron pair recombination sites. The electrochemical analytical results lead us to believe that the particular non-stoichiometric composition of BiV1-xWxtdO4 can signi?cantly lower trap sites and enhances kinetics of charge transfer, leading to the better photoelectrochemical water splitting performance.
关键词： Oxygen evolution,Photoelectrochemical cell,Water splitting,Bismuth vanadate,Tungsten doping
更新于2025-09-23 15:23:52