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Tuning the Emission Colors of Self-Assembled Quantum Dot Monolayers via One-Step Heat Treatment for Display Applications
摘要： Homogeneously self-assembled colloidal semiconductor quantum dot monolayers (QD-SAMs) over large areas are promising materials for thin film optoelectronic device applications, especially for display. Although tuning of emission colors from QDs is generally achieved during wet chemical synthesis and before monolayer formation, we propose in this study a simple and effective method to adjust emission colors after the formation of QD-SAMs by a simple one-step heat treatment. CdSe-based core/shell or core/double shell structured QDs (CdSe/ZnS, CdSe/CdZnS, and CdSe/CdS/ZnS) covered with an optimal set of hydrophobic ligands can form homogeneous and stable QD-SAMs at the air-water interface. The QD-SAMs are subsequently transferred onto hydrophobized glass substrates by the Langmuir-Schaefer (LS) method and thermally treated in air. We found a blueshift of more than 35 nm for the emission wavelength (red to green) by a thermal treatment at 280 °C for 150 min with CdSe/ZnS QD-SAMs. The color can be adjusted by changing the heating temperature and the treatment time. The wavelength shift is in the order of CdSe/ZnS(4L) > CdSe/ZnS(6L) = (CdSe/CdZnS) > (CdSe/CdS/ZnS). The energy dispersive X-ray (EDX) microanalysis of a single QD reveals that the blueshift is mainly caused by atomic diffusion-induced alloying of core/shell type QDs. The main problem of this method is the decreasing emission intensity caused by oxidation during the heat treatment; however, this problem can be solved by use of a SiO2 protective coating on the QD-SAMs. We believe that this simple technique is useful for manufacturing RGB-colored ultrathin QD-SAM films for QDs displays such as QD film display, QD color-filter display, and QD light emitting diode.
关键词： QD Display,Quantum dots,Color tuning,Self-assembled monolayer,atomic diffusion-induced alloying,Thermal treatment
更新于2025-09-23 15:19:57
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Immobilization of DNA on Quartz Crystal Microbalance Sensor Modified with Self-Assembled Monolayer of Thiol Derivative
摘要： In this study, we investigated the direct detection of DNA, without pretreatment, using a quartz crystal microbalance (QCM) sensor. This sensor is modified by a self-assembled monolayer of a thiol derivative that has an amino group as the terminal functional group. Contact angle values and the attenuated total reflectance Fourier transform infrared (ATR/FT-IR) spectra of the QCM sensors after immersion into an ethanol solution of thiol derivatives clearly showed that self-assembled monolayers of the derivatives were formed on the QCM sensors. Although QCM measurements using unmodified and carboxylic group-modified sensors could not detect DNA-Na salt, the sensor modified with amino groups could detect the DNA. This system can be used for the analysis of the interaction between DNA and DNA-binding proteins.
关键词： DNA,thiol derivative,quartz crystal microbalance,self-assembled monolayer
更新于2025-09-23 15:19:57
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Enhancing the stability of perovskite solar cells through functionalisation of metal oxide transport layers with self-assembled monolayers
摘要： A systematic study of the application of self-assembly monolayers (SAMs) onto electron and hole transporting layers for perovskite solar cells (PSCs) stability is reported. Cs0.05FA0.83MA0.17Pb(I0.87Br0.13)3 (FMC) perovskite films were deposited onto tin oxide (SnO2) and nickel oxide (NiOx) layers that were functionalized with ethylphosphonic acid (EPA) and 4-bromobenzoic acid (BBA) SAMs. X-ray diffractometry measurements were performed on these films shortly after they were deposited. The diffractograms agree with the positions reported in the literature for the crystal structure of the FMC. The results show that the deposition of SAMs on the metal oxide layers yields positive improvements in the FMC film stability and in the device stability when using FMC as the active layer. The work shows that by adopting SAMs, the long-term stability of PSCs cells under accelerated test conditions can be enhanced, and this provides one step on the way to making this technology a commercial reality.
关键词： Degradation study,Perovskite film,Self-assembly monolayer,Perovskites device,Temperature induced degradation,Light induced degradation
更新于2025-09-23 15:19:57
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Remarkable negative differential resistance and perfect spin-filtering effects of the indium triphosphide (InP <sub/>3</sub> ) monolayer tuned by electric and optical ways
摘要： Fully spin-polarized current and negative differential resistance (NDR) are two important electronic transport properties for spintronic nanodevices based on two-dimensional materials. Here, we describe both the electric and optical tuning of the spin-polarized electronic transport properties of the indium triphosphide (InP3) monolayer, which is doped with Ge atoms, by using quantum transport calculations. The spin degeneration of the InP3 monolayer is lifted due to the doping of Ge atoms. By applying a small bias voltage, a fully spin-polarized current can be obtained along both the armchair and zigzag directions. Moreover, a remarkable NDR is observed for the current along the zigzag direction, which shows a huge peak-to-valley ratio of 3.1 (cid:2) 103, while in the armchair direction, a lower peak-to-valley ratio of 5.5 is obtained. Alternatively, a fully spin-polarized photocurrent can also be generated under the illumination of linearly-polarized light by tuning either the photon energy or the polarization angle.
关键词： spin-polarized current,negative differential resistance,InP3 monolayer,quantum transport calculations,Ge doping,spintronic nanodevices
更新于2025-09-23 15:19:57
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Strained bubbles in van der Waals heterostructures as local emitters of photoluminescence with adjustable wavelength
摘要： The possibility to tailor photoluminescence (PL) of monolayer transition metal dichalcogenides (TMDCs) using external factors such as strain, doping and external environment is of significant interest for optoelectronic applications. Strain in particular can be exploited as a means to continuously vary the bandgap. Micrometer-scale strain gradients were proposed for creating ‘artificial atoms’ that can utilize the so-called exciton funneling effect and work, for example, as exciton condensers. Here we describe room-temperature PL emitters that naturally occur whenever monolayer TMDC is deposited on an atomically flat substrate. These are hydrocarbon-filled bubbles which provide predictable, localized PL from well-separated submicron areas. Their emission energy is determined by the built-in strain controlled only by the substrate material, such that both the maximum strain and the strain profile are universal for all bubbles on a given substrate, i.e., independent of the bubble size. We show that for bubbles formed by monolayer MoS2, PL can be tuned between 1.72 to 1.81 eV by choosing bulk PtSe2, WS2, MoS2 or graphite as a substrate and its intensity is strongly enhanced by the funneling effect. Strong substrate-dependent quenching of the PL in areas of good contact between MoS2 and the substrate ensures localization of the luminescence to bubbles only; by employing optical reflectivity measurements we identify the mechanisms responsible for the quenching. Given the variety of available monolayer TMDCs and atomically flat substrates and the ease of creating such bubbles, our findings open a venue for making and studying the discussed light-emitting ‘artificial atoms’ that could be used in applications.
关键词： photoluminescence,exciton funneling,monolayer transition metal chalcogenides,excitons,strain engineering
更新于2025-09-19 17:15:36
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Integral monolayer-scale featured digital-alloyed AlN/GaN superlattices using hierarchical growth units
摘要： Acquiring AlN/GaN digital alloys with matching coherent lattices, atomically sharp interfaces, and negligible compositional fluctuations remains a challenge. In this work, the nature and formation mechanism of the constituent elements of AlN and GaN atomic layers growth was examined by first-principle calculations and experimental demonstration. Basing on the calculated formation enthalpies, we developed a hierarchical growth method wherein AlN and GaN growth units are digitally stacked layer by layer through metal organic vapor-phase epitaxy, which involves the growth sequence instantaneously to control chemical potentials of the hierarchical growth units under different atmospheres. High-resolution X-ray diffraction and transmission electron microscopy confirmed that the hierarchical GaN and AlN growth units of digital-alloyed AlN/GaN structures had coherent lattices, abrupt interfaces, and integral monolayers at the atomic scale. The cathodoluminescence properties featured with single emission, combining with theoretical results, demonstrated that the capability of electronic energies via the digital-alloyed AlN/GaN superlattices. These results provide a basis toward the realization of other digital-alloyed nitride semiconductors.
关键词： digital-alloyed AlN/GaN superlattices,integral monolayer-scale,hierarchical growth units
更新于2025-09-19 17:15:36
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Eighteen functional monolayer metal oxides: wide bandgap semiconductors with superior oxidation resistance and ultrahigh carrier mobility
摘要： Layered metal oxides have emerged as an up-and-comer in the family of two-dimensional materials due to their natural abundance, intrinsic bandgap, and chemical inertness. Based on first-principles calculations, we systematically investigated the atomic structures, energetic stability, and electronic properties of 18 monolayer metal oxides. All these monolayer metal oxides are predicted to be energetically favorable with negative formation energies in the range of -4.27 to -0.47 eV per atom, suggesting good experimental feasibility for synthesis of these monolayer metal oxides. Monolayer metal oxides exhibit superior oxidation resistance, and possess modest to wide bandgaps (1.22–6.48 eV) and high carrier mobility (especially up to 8540 cm2 V?1 s?1 for the InO monolayer), thereby rendering these low-dimensional materials promising candidates for carrier transport. Also, a pronounced in-plane anisotropy for the carrier mobility with a longitudinal/horizontal ratio as large as 115 is revealed for the monolayer metal oxides. These 2D metal oxides exhibit notable absorption in the ultraviolet range with the absorption coefficient >10? cm?1. The combined novel properties of these monolayer metal oxides offer a wide range of opportunities for advanced electronic and optoelectronic applications.
关键词： two-dimensional materials,optoelectronics,monolayer metal oxides,bandgap,carrier mobility,oxidation resistance
更新于2025-09-19 17:15:36
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A WSe <sub/>2</sub> vertical field emission transistor
摘要： We report the first observation of a gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on a SiO2/Si substrate. Ni contacted WSe2 monolayer back-gated transistors, under high vacuum, exhibit n-type conduction and drain-bias dependent transfer characteristics, which are attributed to oxygen/water desorption and drain induced Schottky barrier lowering, respectively. The gate-tuned n-type conduction enables field emission, i.e. the extraction of electrons by quantum tunnelling, even from the flat part of the WSe2 monolayers. Electron emission occurs under an electric field ～100 V μm?1 and exhibits good time stability. Remarkably, the field emission current can be modulated by the back-gate voltage. The first field-emission vertical transistor based on the WSe2 monolayer is thus demonstrated and can pave the way to further optimize new WSe2 based devices for use in vacuum electronics.
关键词： WSe2,field emission,monolayer,transistor,vacuum electronics
更新于2025-09-19 17:15:36
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Atypical Defect-Mediated Photoluminescence and Resonance Raman Spectroscopy of Monolayer WS2
摘要： Defects play an indispensable role in tuning the optical properties of two-dimensional(2D) materials. Herein, we study the influence of defects on the photoluminescence (PL) and resonance Raman spectra of as-grown monolayer(1L) WS2. Increasing the density of defects significantly lowers the excitonic binding energy by up to 110 meV. These defect-modified excitonic binding energies in1L-WS2 strongly mediate the Raman resonance condition, resulting in unexpected Raman intensity variations in the LA(M), 2LA(M) and phonon modes. The sample with the highest density of defects exhibits an almost temperature independent resonance in different Raman modes at low temperature, while the samples with low densities of defects exhibit clear resonance with decreasing temperature. This study will further increase our understanding of the role of defects in resonance Raman spectroscopy and of the phonon-exciton interaction in 1L-WS2.
关键词： photoluminescence,defects,excitonic binding energy,resonance Raman spectroscopy,monolayer WS2
更新于2025-09-19 17:15:36
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Laser annealing towards high-performance monolayer MoS2 and WSe2 field effect transistors
摘要： The transition metal dichalcogenides (TMDCs) have been intensively investigated as one of promising nanoelectronic and optoelectronic materials. However, the pervasive adsorbates on the surface of monolayer TMDCs, including oxygen and water molecules from the ambient environments, predominately degrade the device performance, thus hindering the precise applications. In this work, we report the effect of laser irradiation on the transport and photoresponse of monolayer MoS2 and WSe2 devices, and this laser annealing process is demonstrated as one straightforward approach to remove the physically adsorbed contaminations. Compared with vacuum pumping and in-situ thermal annealing treatments, the field-effect transistors after the laser annealing show more than one order of magnitude higher on-state current, and no apparent degradation of device performance at low temperature. The mobility of monolayer WSe2 devices can be enhanced by 3-4 times, and for single-layered MoS2 devices with the commonly used SiO2 as the back-gate, the mobility increases by 20 times, reaching 37 cm2 ? V?1 ? s?1. The efficient cleaning effect of the laser annealing is also supported by the reduction of channel and contact resistances revealed by the transmission line experiment. Further, the enhanced photocurrent by a factor of 10 has been obtained in the laser annealed device. These findings pave the way for the high-performance monolayer TMDCs-based electronic and optoelectronic devices with the clean surface and intrinsic properties.
关键词： TMDCs,monolayer MoS2,photoresponse,field-effect transistors,laser annealing,monolayer WSe2
更新于2025-09-19 17:13:59