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[IEEE 2019 IEEE High Power Diode Lasers and Systems Conference (HPD) - Coventry, United Kingdom (2019.10.9-2019.10.10)] 2019 IEEE High Power Diode Lasers and Systems Conference (HPD) - High-power 1.5μm laser diodes for LIDAR applications
摘要： The development of high-power, high-efficiency 3.5 μm band lasers is crucial for various applications in optoelectronics, including medical diagnostics, environmental monitoring, and defense systems. This paper presents a novel approach to enhancing the performance of these lasers through the use of advanced semiconductor materials and innovative device architectures. Our experimental results demonstrate significant improvements in output power and efficiency, paving the way for next-generation optoelectronic devices.
关键词： semiconductor materials,device architectures,high-power,3.5 μm band lasers,high-efficiency,optoelectronics
更新于2025-09-16 10:30:52
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The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts
摘要： We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface.
关键词： detector,THz region,graphene,terahertz radiation,graphene nanoribbons,optoelectronics
更新于2025-09-16 10:30:52
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Model for electroluminescence in single-walled carbon nanotube field effect transistor under transverse magnetic field
摘要： Electroluminescence spectrum and radiative recombination rate of short channel single-walled carbon nanotube field effect transistor in presence of transverse magnetic field is calculated by using non-equilibrium Green’s function method. Significant enhancement in radiative recombination rate and red shift in electroluminescence spectrum are observed with increase in the strength of magnetic field. The band gap suppression estimated from energy position resolved local density of states calculation plays a dominant role in transport mechanism under the influence of external magnetic field. The tuning of electroluminescence spectrum of single-walled carbon nanotube by transverse magnetic field can be employed as nanoscale optical source in next generation optoelectronic and photonic devices.
关键词： electroluminescence,single-walled carbon nanotube,optoelectronics,radiative recombination rate,plasmonics,field effect transistor
更新于2025-09-16 10:30:52
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Growth of Ultrathin Ternary Teallite (PbSnS2) Flakes for Highly Anisotropic Optoelectronics
摘要： Two-dimensional (2D) ternary materials have gained significant attention because of their additional degree of freedom stemming from the variable stoichiometry. However, the research on 2D ternary materials is still in the early stage because of the difficulty of synthesizing them. Here, ultrathin PbSnS2 flakes are synthesized via chemical vapor deposition (CVD) assisted by salt and a molecular sieve with thickness down to ~2.4 nm. Adding salt and a molecular sieve results in lowering of the melting point of metal precursors and uniformly distributed source vapors in the reaction system, respectively. Impressively, 2D PbSnS2 flake shows giant anisotropic mobility (marmchair/mzigzag = 1.78) and responsivity (Rzigzag/Rarmchair = 1.25). The employment of salt and a molecular sieve in the CVD process for successful synthesis of ultrathin PbSnS2 flakes may provide a new platform for the design of other 2D ternary materials.
关键词： ternary materials,anisotropic optoelectronics,PbSnS2,chemical vapor deposition,2D materials
更新于2025-09-16 10:30:52
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High-Temperature Analysis of GaN-based Blue LEDs for Future Power Electronic Applications
摘要： Commercial gallium-nitride-based blue light-emitting diodes (LEDs), primarily fabricated for lighting applications, are evaluated at high temperatures (up to 700 K) for possible integration as an optocoupler emitter in high-density power electronic modules. The temperature- and injection-current-dependent internal quantum efficiency and current-voltage characteristics of the blue LEDs are studied. The internal quantum efficiency (IQE) is extracted integrated electroluminescence (EL) intensity at different temperatures using the ABC model. The presented method helps evaluate the optimized injection current density to achieve minimum deviation in LED IQE at a broader range of operating temperatures. As per the ABC model, the LED can operate at 700 K with an IQE of 58.50% when it operates at a current density of 2A/cm2. The results show that for a temperature range of 77 – 700 K, the minimum deviation of IQE occurs when the injected current density is between 1 to 10 A/cm2. Normalized external quantum efficiency (EQE) of the device at different temperatures were also extracted using the ABC model.
关键词： quantum efficiency,high-density power module,electroluminescence,optocoupler,high-temperature optoelectronics,galvanic isolation
更新于2025-09-12 10:27:22
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The Importance of p-Doping for Quantum Dot Laser on Silicon Performance
摘要： p-type modulation doping of the quantum dot active region is known to improve high temperature and dynamic performance of quantum dot lasers. These improvements are critical to realizing commercially relevant quantum dot devices on silicon and are shown to enable continuous wave operation over 100?C, nearly complete insensitivity to optical feedback, and orders of magnitude improvement in device reliability relative to unintentionally doped active regions. Also described is a spectrally resolved analysis of the effect of p-modulation doping on the optical gain revealing anomalous behavior that explains the high characteristic temperatures commonly observed in literature for similar devices on native substrate.
关键词： Integrated optoelectronics,photonics,quantum dots,semiconductor lasers
更新于2025-09-12 10:27:22
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Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness
摘要： Driven by tensile strain, GaAs quantum dots (QDs) self-assemble on In0.52Al0.48As(111)A surfaces lattice-matched to InP substrates. In this study, we show that the tensile-strained self-assembly process for these GaAs(111)A QDs unexpectedly deviates from the well-known Stranski-Krastanov (SK) growth mode. Traditionally, QDs formed via the SK growth mode form on top of a flat wetting layer (WL) whose thickness is fixed. The inability to tune WL thickness has inhibited researchers’ attempts to fully control QD-WL interactions in these hybrid 0D-2D quantum systems. In contrast, using microscopy, spectroscopy, and computational modeling, we demonstrate that for GaAs(111)A QDs, we can continually increase WL thickness with increasing GaAs deposition, even after the tensile-strained QDs (TSQDs) have begun to form. This anomalous SK behavior enables simultaneous tuning of both TSQD size and WL thickness. No such departure from the canonical SK growth regime has been reported previously. As such, we can now modify QD-WL interactions, with future benefits that include more precise control of TSQD band structure for infrared optoelectronics and quantum optics applications.
关键词： wetting layer,quantum dots,tensile strain,Stranski-Krastanov growth,optoelectronics
更新于2025-09-12 10:27:22
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Pt Nanoclusters Sandwiched between Hexagonal Boron Nitride and Nanographene as van der Waals Heterostructures for Optoelectronics
摘要： We report on the formation of nanoscopic heterostructures composed of the semimetal graphene, the metal platinum, and the insulator hexagonal boron nitride (h-BN). Both graphene and h-BN are chemically inert 2D materials with similar geometric but different electronic properties. Between these materials, a Pt nanoparticle array was encapsulated. Thereby, the h-BN/Rh(111) nanomesh served as a template for a well-ordered array of Pt nanoclusters, which were overgrown with graphene, forming single nano-heterostructures. We investigated this process in situ by high-resolution, synchrotron radiation-based XPS, and NEXFAS. The nanographene layers proofed tight against CO under the tested conditions. These nano-heterostructures could find a possible application in optoelectronics or as data storage material. At the same time, our approach represents a new route for the synthesis of nanographene.
关键词： nanoclusters,optoelectronics,hexagonal boron nitride,nanographene,data storage,graphene,platinum
更新于2025-09-12 10:27:22
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Towards High Throughput Texturing of Polymer Foils for Enhanced Light Trapping in Flexible Perovskite Solar Cells using Roll‐to‐roll Hot Embossing
摘要： In this work, a high throughput method is presented to texture polymer foils by roll-to-roll hot embossing with the objective of increasing the substrate haze factor. Triple cation perovskite solar cells were deposited onto these structured substrate showing an efficiency increase up to 15 % (relative) compared to the reference flat device, due to an enhanced light absorption.
关键词： flexible optoelectronics,perovskite solar cells,roll-to-roll hot embossing,direct laser interference patterning,light trapping
更新于2025-09-12 10:27:22
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[IEEE 2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Erlagol (Altai Republic), Russia (2019.6.29-2019.7.3)] 2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Development of Technology Formation of the Optical Waveguide Structures Based on InP by Plasma Etching
摘要： The paper presents the process development results of plasma etching of InP-based structures in inductively coupled plasma in the Cl2/Ar gas mixture with the addition of N2 and O2. Etching was performed on silicon nitride mask. Dependences of process parameters influence on the etching rate, profile and surface roughness of formed elements are shown. Elements of optical waveguide structures were fabricated, using developed etching process.
关键词： indium phosphide,plasma etching,Optoelectronics
更新于2025-09-12 10:27:22