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- 2018
- Display Metrology
- dSiPM
- Quanta Image Sensor
- CMOS
- QIS
- Complementary Metal Oxide Semiconductor
- Digital Silicon Photo-Multiplier
- Single Photon Avalanche Diode
- SPAD
- Optoelectronic Information Science and Engineering
- The University of Edinburgh
- STMicroelectronics Imaging Division
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Effect of conduction band potential on cocatalyst-free plasmonic H <sub/>2</sub> evolution over Au loaded on Sr <sup>2+</sup> -doped CeO <sub/>2</sub>
摘要： There is little information on the effect of the conduction band (CB) position on plasmonic hydrogen (H2) formation under visible light irradiation over gold (Au) nanoparticles supported on semiconductors because there were no appropriate materials for which the CB position gradually changes. In this study, we analyzed the flatband potential of strontium ion (Sr2+)-doped cerium(IV) oxide (CeO2:Sr) and found that the CB position gradually shifted negatively from +0.031 V to ?1.49 V vs. NHE with an increase in the Sr2+ mole fraction. Plasmonic photocatalysts consisting of Au nanoparticles, CeO2:Sr and a platinum (Pt) cocatalyst were prepared and characterized by using X-ray diffraction, UV-vis spectroscopy, and transmission electron spectroscopy. Photocatalytic reaction under visible light irradiation revealed that H2 was produced over Au nanoparticles supported on CeO2:Sr having the CB potential of ?0.61 V vs. NHE and that the negative limit of the CB position for electron injection from Au nanoparticles existed between ?0.61 V and ?1.49 V vs. NHE. We found that Au/CeO2:Sr plasmonic photocatalysts also produced H2 without the aid of a Pt cocatalyst due to the sufficiently negative potential of electrons injected into the CB of CeO2:Sr.
关键词： hydrogen evolution,visible light irradiation,gold nanoparticles,plasmonic photocatalysts,strontium-doped cerium oxide
更新于2025-11-19 16:51:07
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Preparation of La<sub>0.9</sub>Sr<sub>0.1</sub>Ga<sub>0.8</sub>Mg<sub>0.2</sub>O<sub>3</sub> Film by Pulse Laser Deposition (PLD) Method on Porous Ni–Fe Metal Substrate for CO<sub>2</sub> Electrolysis
摘要： Preparation of metal supported La0.9Sr0.1Ga0.8Mg0.2O3 (LSGM) thin film cell for CO2 electrolysis was studied and by using selective reduction method of NiO–NiFe2O4, it was found that porous Ni–Fe(9:1) based substrate with ca.30% porosity was successfully prepared without large volume change resulting in the successful preparation of LaGaO3 dense thin film on metal substrate. By using Ce0.8Sm0.2O2 (SDC) thin film, Ni diffusion from Ni–Fe substrate was prevented. CO2 electrolysis was performed on the prepared LSGM/SDC on Ni–Fe porous substrate. When Sm0.5Sr0.5CoO3 (SSC) anode was prepared by screen print method using SSC powder, sintering of SSC powder was significantly occurred resulting in the large IR loss and overpotential. In contrast, when SSC anode layer was deposited by PLD (30 min) after LSGM/SDC layer deposition, tight contact between SSC anode and LSGM electrolyte film was obtained and the large CO2 electrolysis current of 3 and 0.5 A/cm2 were achieved at 973 and 773 K, respectively. Impedance analysis suggests that increased CO2 electrolysis current was obtained by decreased IR loss and electrode overpotential.
关键词： LaGaO3 thin film,CO2 electrolysis,metal support,solid oxide electrolysis cell
更新于2025-11-19 16:51:07
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Dual Function of Graphene Oxide for Assisted Exfoliation of Black Phosphorus and Electron Shuttle in Promoting Visible and Near-Infrared Photocatalytic H2 Evolution
摘要： The search for suitable photocatalysts with broadband absorption in visible and near-infrared (NIR) region is recognized as one of the most challenging issues on solar energy utilization. Black phosphorous (BP) is demonstrated as an effective visible and NIR activated material in solar energy conversion. However, traditional liquid exfoliation yield is low and the rigid structure and insoluble properties of pristine BP hinder its high-yield of hybridization. Herein, a new and stable noble-metal-free ternary photocatalyst molybdenum disulfide (MoS2)-BP/graphene oxide (GO) was constructed for splitting water to H2, showing dual functions of GO in synthetic and photocatalytic processes. Under visible-NIR light irradiation, the H2 evolution rates of MoS2-BP/GO was enhanced to 3.47 μmol h-1. Rapid electron injection efficiency from excited BP to GO and to MoS2 was confirmed by femtosecond transient absorption spectroscopy. This study provides new insight into the design of nanomaterials, and offers a noble-metal-free protocol with noble-metal-free.
关键词： visible and NIR,hydrogen evolution,graphene oxide,black phosphorous,noble-metal-free
更新于2025-11-19 16:51:07
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A Label-Free Fluorescent DNA Machine for Sensitive Cyclic Amplification Detection of ATP
摘要： In this study, a target recycled ampli?cation, background signal suppression, label-free ?uorescent, enzyme-free deoxyribonucleic acid (DNA) machine was developed for the detection of adenosine triphosphate (ATP) in human urine. ATP and DNA fuel strands (FS) were found to trigger the operation of the DNA machine and lead to the cyclic multiplexing of ATP and the release of single stranded (SS) DNA. Double-stranded DNA (dsDNA) was formed on graphene oxide (GO) from the combination of SS DNA and complementary strands (CS(cid:48)). These double strands then detached from the surface of the GO and in the process interacted with PicoGreen dye resulting in amplifying ?uorescence intensity. The results revealed that the detection range of the DNA machine is from 100 to 600 nM (R2 = 0.99108) with a limit of detection (LOD) of 127.9 pM. A DNA machine circuit and AND-NOT-AND-OR logic gates were successfully constructed, and the strategy was used to detect ATP in human urine. With the advantage of target recycling ampli?cation and GO suppressing background signal without ?uorescent label and enzyme, this developed strategy has great potential for sensitive detection of different proteins and small molecules.
关键词： cyclic ampli?cation,ATP detection,DNA machine,label-free ?uorescence,graphene oxide,logic gate
更新于2025-11-19 16:46:39
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Influence of bath temperatures on physical and electrical properties of potentiostatically deposited Cu2O thin films for heterojunction solar cell applications
摘要： In the present work, the influence of bath temperatures on structural, morphological, vibrational, optical, electrical and photo response properties of the electrochemically deposited cuprous oxide (Cu2O) thin films on fluorine doped tin oxide substrate is extensively investigated with the help of X-ray diffraction (XRD), scanning electron microscopy (SEM), Micro Raman spectroscopy, photo luminescence (PL) spectroscopy, UV–visible spectroscopy, LCR measurement, Keithley 4200 semiconductor characterization system respectively. XRD patterns reveal that the deposited Cu2O films have cubic structure grown along the preferential (111) orientation and the film deposited at 40 °C shows better crystalline nature when compared at 55 and 70 °C. The micro structural properties of films such as crystallite size (D), dislocation density (δ), micro strain (ε) and stacking fault probability (α) were calculated and discussed in detail. SEM displays a well-defined three side pyramid shaped morphology for the film deposited at 40 °C. Micro Raman and PL spectra reveal the film deposited at 40 °C by being better crystalline at a higher acceptor concentration. UV–Visible study shows that the optical energy band gap increases from 2.05 to 2.17 eV with an increase in bath temperature from 40 to 70 °C. The frequency-temperature dependence of impedance analysis shows a higher electrical conductivity for a film deposited at 40 °C compared to other bath temperatures. I-V measurement illustrates a good photoconductivity response for Cu2O thin film deposited at 40 °C compared to films deposited at 55 and 70 °C.
关键词： Micro Raman spectroscopy,X-ray diffraction,Photoconductivity,Cuprous oxide,Pyramid shape
更新于2025-11-19 16:46:39
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Investigation of sol-gel and nanoparticle-based NiOx hole transporting layer for high-performance planar perovskite solar cells
摘要： We conduct a comprehensive study on and comparison of sol-gel and nanoparticles (NPs)-based nickel oxide hole-transporting layer (HTL) for high-performance planar perovskite solar cells (PSCs). The characteristics and film properties of sol-gel and NPs were systemically investigated using ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and photoluminescence (PL), and its effect on device-performance was also examined using J-V characteristics, quantum-efficiency, and the VOC dependence of the light intensity. Through this comparison of two types of HTL and their device-performances, these studies can provide sufficient and robust information for nickel oxide-based PSCs, and furthermore, the overall results and discussions can be useful for high-performance PSCs.
关键词： Nickel oxide,Planar perovskite solar cells,Hole transporting layer,Sol-gel,Nanoparticles
更新于2025-11-19 16:46:39
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Electrical conductivity and conduction mechanisms in (Na <sub/>0.5</sub> Bi <sub/>0.5</sub> TiO <sub/>3</sub> ) <sub/>1?x</sub> (BiScO <sub/>3</sub> ) <sub/>x</sub> (0.00 ≤ <i>x</i> ≤ 0.25) solid solutions
摘要： The electrical properties of (Na0.5Bi0.5TiO3)1-x(BiScO3)x (NBT-BS, 0.00 ≤ x ≤ 0.25) solid solutions are established by ac impedance spectroscopy and electromotive force transport number measurements. The bulk conductivity decreases with increasing BS incorporation but the oxide-ion transport number remains high (≥0.85) over a wide compositional range 0.00 ≤ x ≤ 0.15 and drops to ≈0.7 for x ≥ 0.20. NBT-BS solid solutions can only present either predominant oxide-ion conduction or mixed ionic-electronic conduction behaviour, indicating that oxide-ion conduction cannot be fully eliminated by incorporation of BS. This is in contrast from our previous study where incorporation of ≈7% BiAlO3 (BA) can fully suppress the oxide-ion conduction in NBT. The conductivity–composition relationships of NBT-BS solid solutions are attributed to a competing effect from lattice expansion, which enlarges the channel for oxygen ion migration, with trapping between B-site acceptor ions, Sc'Ti, and oxygen vacancies, V??O, which decreases oxygen ion migration. Comparisons between NBT-BS, NBT-BA and NBT-BiGaO3 (BG) solid solutions suggest that small acceptor ions on the B-site are more effective in trapping oxygen vacancies and consequently more effective to suppress the oxide-ion conduction and thus reduce dielectric loss at elevated temperatures.
关键词： transport number,electrical conductivity,solid solutions,sodium bismuth titanate,oxide-ion conduction,conduction mechanisms,impedance spectroscopy,BiScO3
更新于2025-11-14 17:28:48
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Manufacturing of All Inkjet-Printed Organic Photovoltaic Cell Arrays and Evaluating their Suitability for Flexible Electronics
摘要： The generation of electrical energy depending on renewable sources is rapidly growing and gaining serious attention due to its green sustainability. With fewer adverse impacts on the environment, the sun is considered as a nearly infinite source of renewable energy in the production of electrical energy using photovoltaic devices. On the other end, organic photovoltaic (OPV) is the class of solar cells that offers several advantages such as mechanical flexibility, solution processability, environmental friendliness, and being lightweight. In this research, we demonstrate the manufacturing route for printed OPV device arrays based on conventional architecture and using inkjet printing technology over an industrial platform. Inkjet technology is presently considered to be one of the most matured digital manufacturing technologies because it offers inherent additive nature and last stage customization flexibility (if the main goal is to obtain custom design devices). In this research paper, commercially available electronically functional inks were carefully selected and then implemented to show the importance of compatibility between OPV material stacks and the device architecture. One of the main outcomes of this work is that the manufacturing of the OPV devices was accomplished using inkjet technology in massive numbers ranging up to 1500 containing different device sizes, all of which were deposited on a flexible polymeric film and under normal atmospheric conditions. In this investigation, it was found that with a set of correct functional materials and architecture, a manufacturing yield of more than 85% could be accomplished, which would reflect high manufacturing repeatability, deposition accuracy, and processability of the inkjet technology.
关键词： inkjet technology,flexible electronics,organic photovoltaics,Indium Tin Oxide (ITO) free solar cells
更新于2025-11-14 17:28:48
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Low temperature fabrication of high quality gate insulator in metal-oxide-semiconductor capacitor using laser annealing
摘要： This paper reports the fabrication of a high quality gate oxide for metal-oxide-semiconductor field effect transistors using a continuous wave blue laser. A thin Zr metal layer was inserted between the dielectric and substrate to increase laser absorption and reduce the interface layer. A simulation of laser irradiation showed that metal layer insertion induces a significant increase in temperature during laser annealing compared to the dielectric without a metal layer. The laser annealed capacitor with a 1 nm-thick Zr metal layer showed superior electrical characteristics, such as high capacitance, low leakage current, low fixed charge density and low interface state density. Based on these results and the economic advantage of blue laser diodes, this technique can be a solution for low temperature processes, such as monolithic 3-dimensional integration, where low temperature processes are required.
关键词： 445 nm wavelength,Zirconium oxide,scavenging effect,laser anneal,blue,MOSCAP,continuous wave,visible laser
更新于2025-11-14 17:28:48
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Reduction of Bias and Light Instability of Mixed Oxide Thin-Film Transistors
摘要： Despite their potential use as pixel-switching elements in displays, the bias and light instability of mixed oxide semiconductor thin-film transistors (TFTs) still limit their application to commercial products. Lack of reproducible results due to the sensitivity of the mixed oxides to air exposure and chemical contamination during or after fabrication hinders any progress towards the achievement of stable performance. Consequently, one finds in literature several theories and mechanisms, all justified, but most of them conflict despite being on the same subject matter. In this study, we show that under an optimized fabrication process, which involves the in situ passivation of a mixed oxide semiconductor, we can reduce the bias and light instability of the mixed-oxide semiconductor TFTs by decreasing the semiconductor thickness. We achieve a negligible threshold voltage shift under negative bias combined with light illumination stress when the mixed oxide semiconductor thickness is around three nanometers. The improvement of stability in the thin mixed-oxide semiconductor TFTs is due to a reduced number of oxygen-vacancy defects in the bulk of the semiconductor, as their total number decreases with decreasing thickness. Under the optimized fabrication process, bulk, rather than interfacial defects, thus seem to be the main source of the bias and light instability in mixed oxide TFTs.
关键词： oxide,stability,thin film transistor
更新于2025-11-14 17:28:48