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Crystallographically oriented porous ZnO nanostructures with visible-blind photoresponse: controlling the growth and optical properties
摘要： We have grown catalyst-free crystallographically oriented porous ZnO nanostructures by pulsed laser deposition (PLD) method. The deposition was performed in two stages for each sample. In the first stage, self-seeding of ZnO was performed on the quartz substrate, and the angle of deposition (seeding-angle) was varied. Thus, the growth of seeds is different here. In the second stage, the deposition was performed at a glancing angle (at 85?) for the fixed duration of time to grow the nanostructures. These PLD-grown nanostructures acquire highly oriented wurtzite structure. We find that the seeding-angle during the first stage is the determining deposition parameter which influences the growth and other properties of these nanostructures in a controllable manner. The variation in seeding-angle systematically tunes the crystallographic orientation and porosity, which in turn influences the visible-blindness and ultraviolet (UV) photoresponse of these nanonetworks. Here we report the growth of completely defect-free crystallographically oriented nanostructures with necessary porosity for application in visible-blind UV photodetection.
关键词： Crystalline ZnO,catalyst-free ZnO,glancing angle deposition (GLAD),seeding,pulsed laser deposition (PLD),nanostructures
更新于2025-11-21 11:03:13
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<i>C–V–f, G–V–f</i> and <i>Z″–Z′</i> Characteristics of <i>n</i> -Type Si/B-Doped <i>p</i> -Type Ultrananocrystalline Diamond Heterojunctions Formed via Pulsed Laser Deposition
摘要： n-Type Si/p-type B-doped ultrananocrystalline diamond heterojunction photodiodes were built using pulsed laser deposition at a heated substrate temperature of 550 °C. Following the capacitance–voltage–frequency (C–V–f) and conductance–voltage–frequency (G–V–f) plots, the series resistance (Rs) values at zero bias voltage were 154.41 Ω at 2 MHz and 1.72 kΩ at 40 kHz. Rs should be ascribed to Rs occurring in the metallic contact and the bulk resistance in the active layer. At 40 kHz, the interface state density (Nss) was 1.78 × 10^13 eV^?1 cm^?2 and dropped exponentially to 1.39 × 10^12 eV^?1 cm^?2 at 2 MHz. An assessed Nss occurring at the heterojunction interface was the cause of deterioration in the photo-detection properties. At different V values, the appearance of the real (Z') and imaginary (Z'') characteristic curves revealed single semicircles whose centers lay below the Z' axis. The magnitude of the curve was diminished with the increment of V. The particularities of Z''–Z' plots can be identified as an equivalent circuit model. The appropriate model included Rs, which was combined with the parallel circuit of resistance and constant phase element.
关键词： UNCD,Interface State Density,Series Resistance,PLD,Impedance
更新于2025-11-14 17:28:48
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Origin of Ferroelectricity in Epitaxial Si-doped HfO2 Films
摘要： HfO2-based unconventional ferroelectric (FE) materials were recently discovered and have attracted a great deal of attention in both academia and industry. The growth of epitaxial Si-doped HfO2 films has opened up a route to understand the mechanism of ferroelectricity. Here, we used pulsed laser deposition (PLD) to grow epitaxial Si-doped HfO2 films in different orientations of N-type SrTiO3 substrates. Using piezoforce microscopy, polar nanodomains can be written and read, and these domains are reversibly switched with a phase change of 180o. Films with different thicknesses displayed a coercive field Ec and a remnant polarization Pr of approximately 4～5 MV/cm and 8～32 μC/cm2, respectively. X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) results identified that the as-grown Si-doped HfO2 films have strained fluorite structures. The ABAB stacking mode of the Hf atomic grid observed by HRTEM clearly demonstrates that the ferroelectricity originates from the noncentrosymmetric Pca21 polar structure. Combined with soft X-ray absorption spectra (XAS), it was found that the Pca21 ferroelectric crystal structure manifested as O sublattice distortion by the effect of interface strain and Si dopant interactions, resulting in further crystal-field splitting as a nanoscaled ferroelectric ordered state.
关键词： HRTEM,PLD,XRD,Ferroelectricity,PFM,XAS,Epitaxial Si-doped HfO2 thin films,N-type SrTiO3 substrates
更新于2025-11-14 17:04:02
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Laser synthesis of iron nanoparticle for Fe doped hydroxyapatite coatings
摘要： Thin films of iron doped hydroxyapatite have been prepared by nanosecond Pulsed Laser Deposition (PLD). The composite target used for the deposition has been obtained by mixing commercial hydroxyapatite powder with iron-based nanoparticles produced by femtosecond laser ablation in liquid (LAL) (4% of iron nanoparticles). In fact, LAL technique allows to obtain metallic nanostructures without any toxic chemicals and reagents, with a green approach that is crucial for application in biological and medical technologies. Films have been prepared with substrate temperature growing from room temperature (RT) to 500 °C. The effect of deposition temperature on morphology, composition and structural properties of coatings has been investigated. Films deposited at higher temperature result dense and crystalline, they present microscale and nanoscale structures, an average surface roughness of 0.3 μm and magnetic properties suitable for biomedical applications.
关键词： PLD,Iron doped hydroxyapatite,Laser ablation in liquid,Regenerative orthopedic applications
更新于2025-09-23 15:23:52
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Highly Conductive and Transparent AZO Films Fabricated by PLD as Source/Drain Electrodes for TFTs
摘要： Aluminum-doped ZnO (AZO) has huge prospects in the field of conductive electrodes, due to its low price, high transparency, and pro-environment. However, enhancing the conductivity of AZO and realizing ohmic contact between the semiconductor and AZO source/drain (S/D) electrodes without thermal annealing remains a challenge. Here, an approach called pulsed laser deposition (PLD) is reported to improve the comprehensive quality of AZO films due to the high energy of the laser and non-existence of the ion damage. The 80-nm-thick AZO S/D electrodes show remarkable optical properties (transparency: 90.43%, optical band gap: 3.42 eV), good electrical properties (resistivity: 16 × 10?4 ?·cm, hall mobility: 3.47 cm2/V·s, carrier concentration: 9.77 × 1020 cm?3), and superior surface roughness (Rq = 1.15 nm with scanning area of 5 × 5 μm2). More significantly, their corresponding thin film transistor (TFT) with low contact resistance (RSD = 0.3 M?) exhibits excellent performance with a saturation mobility (μsat) of 8.59 cm2/V·s, an Ion/Ioff ratio of 4.13 × 106, a subthreshold swing (SS) of 0.435 V/decade, as well as good stability under PBS/NBS. Furthermore, the average transparency of the unpatterned multi-films composing this transparent TFT can reach 78.5%. The fabrication of this TFT can be suitably transferred to transparent arrays or flexible substrates, which is in line with the trend of display development.
关键词： PLD,TFT,AZO,transparency,source/drain electrodes
更新于2025-09-23 15:23:52
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AIP Conference Proceedings [Author(s) 4TH ELECTRONIC AND GREEN MATERIALS INTERNATIONAL CONFERENCE 2018 (EGM 2018) - Bandung, Indonesia (27–28 July 2018)] - The enhancement of the corrosion protection of 304 stainless steel using Al2O3 films by PLD method
摘要： The enhancement of the corrosion protection of 304 stainless steel using Al2O3 films by PLD method. In this manuscript, we are using PLD to reduce the corrosion rate of the stainless steel 304 in hydrochloric acid with the concentration of 1 M and the immersion time of 4 minutes at room temperature. This method opens prospects to use the enhanced stainless steel for many electronics and manufacturing applications.
关键词： PLD,corrosion,Al2O3 films,304 stainless steel
更新于2025-09-23 15:23:52
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Temperature Dependent Electrical Transport Properties of High Carrier Mobility Reduced Graphene Oxide Thin Film Devices
摘要： We confirm variable electrical transport properties of high mobility reduced graphene oxide (RGO) thin films fabricated by pulse laser deposition. The temperature dependent (5K–350K) four terminal electrical transport property measurements range hopping and thermally activated transport mechanism of the charge carriers at low (5K–210K) and high temperature (210K–350K) regions, respectively. The calculated localization length, the density of states near the Fermi level (EF), hopping energy, and Arrhenius energy gap provide useful information to explain the excellent electrical properties of the RGO films. Hall mobility measurement confirms p-type characteristics of the thin films. The charge carrier Hall mobility can be engineered by tuning the growth parameters, and the measured maximum mobility was 1596 cm2v-1s-1. The optimization of the improved electrical property is well supported by structural properties such as the defect density, average size of sp2 clusters and degree of reduction, which were investigated by Raman spectroscopy and X-ray diffraction analysis.
关键词： PLD,variable range hopping,and Raman spectroscopy,hall mobility,Reduced graphene oxide,localization length
更新于2025-09-23 15:22:29
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Investigation of local geometrical structure, electronic state and magnetic properties of PLD grown Ni doped SnO2 thin films
摘要： We have investigated the ferromagnetic behavior, electronic states and local geometrical structure of Ni (2 and 10 at %) doped SnO2 thin films. The films were successfully fabricated with the help of pulsed laser deposition (PLD) technique on Si (100) substrate under ultrahigh vacuum (UHV) condition. X-ray diffraction (XRD) results revealed the single phase character of SnO2 rutile lattice structure with P42/mnm space group. The inclusion of Ni ions into SnO2 matrix induced oxygen vacancy (Vo), enhanced the distortion in octahedral local symmetry and reduced the oxidation state of the host Sn4+ (SnO2) to Sn3+ (Sn2O3) these details have been estimated by Raman scattering, Near edge X-ray absorption fine structure (NEXAFS) spectra at Ni L3,2 and O K edges. Further quantitative details on the local geometrical structure around Ni ions were obtained via fitting the experimental Fourier transforms EXAFS spectra |X(R)| with FEFF6 code. The magnetization measurements performed at room temperature (RT) infers that the observed magnetic behavior of the films seems to be relevant to the same crystal growth condition (UHV) and might not be limited directly to the Ni dopant concentrations. The FM signal and the role of surface defects have been discussed based spin-split impurity band difference in the saturation moments even with increase the Ni content. Hence, the similarity in Ni doped SnO2 films displayed ferromagnetic (FM) signal, and there was no significant Ferromagnetism etc. percolation mechanism.
关键词： surface defects,XANES spectra,SnO2 nanostructured thin film,PLD,local symmetry,XRD,NEXAFS
更新于2025-09-23 15:22:29
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Characterisation of AlN nano thin films prepared by PLD
摘要： Aluminium nitride (AlN) nano thin films have been prepared by pulsed laser deposition (PLD) in this paper. The microstructure and grain size of the nano thin films were characterised by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results showed that the PLD conditions such as laser fluence, ambient pressure and substrate temperature influence the thickness, morphology and grain size of the nano thin films obviously, i.e. the surface of the nano thin films becomes rough while the grain size increases with increasing the laser fluence, ambient pressure and substrate temperature. In addition, there exists a preferred orientation growth in the thin films.
关键词： microstructure,pulsed laser deposition (PLD),aluminium nitride,grain size,Nano thin films
更新于2025-09-23 15:22:29
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Structural and dielectric properties of PLD grown BST thin films
摘要： Thin films of Barium Strontium Titanate (BaSrTiO3, BST) have been deposited on platinised silicon substrate using pulsed laser deposition (PLD) technique. The effect of growth pressure and temperature during the film deposition on the crystallization and dielectric behaviour of the BST films has been studied. The effect of plume dynamics due to variation in deposition parameters present inside the deposition chamber has also been investigated. The dielectric constant of the BST thin film deposited under variable deposition pressures increases with increase in deposition temperature at a frequency of 1 MHz. The BST thin film deposited at 1.33 × 10?4 bar and 800 °C substrate temperature exhibits high dielectric constant (≈475) with 65% tunability which can be efficiently exploited for the realization of tunable resonators and filters.
关键词： Barium Strontium Titanate,BST,PLD,tunability,dielectric properties
更新于2025-09-23 15:21:21