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High-performance PZT-based Stretchable Piezoelectric Nanogenerator
摘要： Stretchable piezoelectric nanogenerators (SPNG) are highly desirable for power supply of flexible electronics. Piezoelectric composite material is the most effective strategy to render piezoelectric nanogenerators stretchable. However, the generated output performance is unsatisfactory due to the low piezoelectric phase proportion. Here we demonstrate a high-performance Pb(Zr0.52Ti0.48)O3 (PZT) -based stretchable piezoelectric nanogenerator (HSPG). The proposed HSPG exhibits excellent output performance with a power density of ~81.25μW/cm3, dozens of times higher than previously reported results. Mixing technique, instead of conventional stirring technology, is used to incorporate PZT particles into solid silicone rubber. The filler distribution homogeneity in matrix is thus remarkably improved, allowing higher filler composition. The PZT proportion in composite can be increased to 92wt% with satisfactory stretchability of 30%. Based on the excellent electrical and mechanical properties, the proposed HSPG can be attached to human body to harvest body kinetic energy with multiple deformation modes. The obtained energy can be used to operate commercial electronics or be stored into a capacitor. Therefore, our HSPG has great potential application in powering flexible electronics.
关键词： energy harvesting,PZT,Piezoelectric composite,stretchable nanogenerator
更新于2025-11-21 11:18:25
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Thinning ferroelectric films for high-efficiency photovoltaics based on the Schottky barrier effect
摘要： Achieving high power conversion efficiencies (PCEs) in ferroelectric photovoltaics (PVs) is a longstanding challenge. Although recently ferroelectric thick films, composite films, and bulk crystals have all been demonstrated to exhibit PCEs >1%, these systems still suffer from severe recombination because of the fundamentally low conductivities of ferroelectrics. Further improvement of PCEs may therefore rely on thickness reduction if the reduced recombination could overcompensate for the loss in light absorption. Here, a PCE of up to 2.49% (under 365-nm ultraviolet illumination) was demonstrated in a 12-nm Pb(Zr0.2Ti0.8)O3 (PZT) ultrathin film. The strategy to realize such a high PCE consists of reducing the film thickness to be comparable with the depletion width, which can simultaneously suppress recombination and lower the series resistance. The basis of our strategy lies in the fact that the PV effect originates from the interfacial Schottky barriers, which is revealed by measuring and modeling the thickness-dependent PV characteristics. In addition, the Schottky barrier parameters (particularly the depletion width) are evaluated by investigating the thickness-dependent ferroelectric, dielectric and conduction properties. Our study therefore provides an effective strategy to obtain high-efficiency ferroelectric PVs and demonstrates the great potential of ferroelectrics for use in ultrathin-film PV devices.
关键词： power conversion efficiency,Schottky barrier effect,ferroelectric photovoltaics,PZT ultrathin film,depletion width
更新于2025-11-14 17:28:48
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Effects of repetitive polarization switching on the coercive voltage of Pt/Pb(Zr0.52Ti0.48)O3/Pt thin films analyzed using impedance spectroscopy
摘要： We investigated the effect of repetitive switching of polarization on the ferroelectric Pt/Pb(Zr0.52Ti0.48)O3/Pt thin film capacitor by using impedance spectroscopy. From the Cole-Cole plot, the equivalent circuit is described as a combination of the bulk part (a capacitor), the interface part (the constant phase element (CPE), and a parallelly-connected resistor). The circuit parameters were analyzed at various stages of switching. An early increase and a subsequent decrease of the bulk capacitance may represent the wake-up and fatigue phenomena, respectively. The change in the interface part was characterized by an increase in resistance and the growth of n, the exponent of CPE, which may have come from a reduction of defects and the diminished inhomogeneity in the interfacial layer, respectively. The change in the resistance and the coefficient of the CPE in the interface part collectively resulted in an increase in the interfacial impedance. The coercive voltage, which may have intrinsically increased due to the repetitive switching, was even larger as a result of the increased interfacial impedance.
关键词： Impedance spectroscopy,Wake-up,Coercive voltage,PZT,Fatigue
更新于2025-11-14 17:28:48
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Internal-field-dependent low-frequency piezoelectric energy harvesting characteristics of in situ processed Nb-doped Pb(Zr,Ti)O3 thin-film cantilevers
摘要： Piezoelectric thin-film-based cantilevers have been investigated for higher energy-harvesting performance with simplified processing steps. Here, a simple in situ film deposition process of heavily Nb-doped lead zirconate titanate (PZT) films, which does not require annealing and poling, has been demonstrated to verify the possibility of use of the resultant films as energy-harvesters specifically for low frequency vibrating sources. The in situ domain formation of the films during the deposition was demonstrated from the apparent shifts of the capacitance-electric field curves, indicating the presence of internal electric fields. The so-called imprint behavior was found to be directly related to the performance of piezoelectric energy harvesting. As an optimal example, 12 mol% Nb-doped cantilever harvesters that showed the largest imprint behavior exhibited the best values of ~19.1 GPa figure-of-merit and ~1436 mWcm?3g?2 power density, which are competitive compared to other reported values.
关键词： Thin films,Cantilevers,Piezoelectric energy harvesting,Nb-doping,PZT
更新于2025-09-23 15:23:52
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PZT/PZT and PZT/BiT Composite Piezo-Sensors in Aerospace SHM Applications: Photochemical Metal Organic + Infiltration Deposition and Characterization
摘要： The composition of fine-ground lead zirconate-titanate powder Pb(Zr0.52Ti0.48)O3, suspended in PZT and bismuth titanate (BiT) solutions, is deposited on the curved surface of IN718 and IN738 nickel-based super alloy substrates up to 100 μm thickness. Photochemical metal organic and infiltration techniques are implemented to produce smooth, semi-dense, and crack-free random orientated thick piezoelectric films as piezo-sensors, free of any dopants or thickening polymers. Every single layer of the deposited films is heated at 200 °C with 10 wt.% excess PbO, irradiated by ultraviolet lamp (365 nm, 6 watt) for 10 min, pyrolyzed at 400 °C, and subsequently annealed at 700 °C for one hour. This process is repeated successively until reaching the desired thickness. Au and Pt thin films are deposited as the bottom and top electrodes using evaporation and sputtering methods, respectively. PZT/PZT and PZT/BiT composite films are then characterized and compared to similar PZT and BiT thick films deposited on the similar substrates. The effect of the composition and deposition process is also investigated on the crystalline phase development and microstructure morphology as well as the dielectric, ferroelectric, and piezoelectric properties of piezo-films. The maximum remnant polarization of Pr = 22.37 ± 0.01, 30.01 ± 0.01 μC/cm2, the permittivity of εr = 298 ± 3, 566 ± 5, and piezoelectric charge coefficient of d33 = 126, 148 m/V were measured versus the minimum coercive field of Ec = 50, 20 kV/cm for the PZT/PZT and PZT/BiT thick films, respectively. The thick film piezo-sensors are developed to be potentially used at frequency bandwidth of 1–5 MHz for rotary structural health monitoring and also in other industrial or medical applications as a transceiver.
关键词： piezoelectric sensor,structural health monitoring,PZT/BiT,composite,characterization,sol-gel PMOD deposition,infiltration,aerospace structure,PZT/PZT,thick film
更新于2025-09-23 15:22:29
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A distributed parametric model of Brinson shape memory alloy based resonant frequency tunable cantilevered PZT energy harvester
摘要： This paper presents, an analytical model of piezoelectric vibration energy harvester consists of Brinson shape memory alloy (SMA) plate which can tune the resonant frequency. As the energy harvester should be tuned to excitation frequency in order to drive the maximum power, the temperature of SMA is varied to tune the natural frequency of the composite beam. In addition to SMA it also consists of piezoelectric layer and substructure layer. Using Euler–Bernoulli beam assumption, the expressions for frequency response of voltage, current and power outputs with temperature are obtained. From parametric study, it is observed that the tuning of natural frequency is 25–26%, for first three modes of vibration in short and open circuit conditions.
关键词： PZT,Energy harvester,Shape memory alloy,Tunable,Cantilever
更新于2025-09-23 15:22:29
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[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Biaxial Strain based Performance Modulation of Negative-Capacitance FETs
摘要： In this work, we report device simulations conducted to study the performance of biaxially strained ferroelectric-based negative capacitance FETs (NCFETs). We adopted PbZr0.5Ti0.5O3 (PZT) and HfO2 as ferroelectric materials and applied biaxial strain using the first-principles method. It was found that PZT and HfO2 show different trends in the negative capacitance (NC) region under biaxial strain. Biaxial strain strongly affects the NC of PZT, whereas HfO2 is not as susceptible to biaxial strain as PZT. When no strain is applied, HfO2-based NCFETs exhibit a better performance than PZT-based NCFETs. However, the subthreshold slope and ON-state current are improved in the case of PZT-based NCFETs when the compressive biaxial strain is increased, whereas the performance of HfO2-based NCFETs is slightly degraded. In particular, the negative drain-induced barrier lowering and negative differential resistance vary considerably when compressive strain is applied to PZT-based NCFETs.
关键词： strain,negative capacitance FETs,ferroelectrics,density functional theory,HfO2,PZT
更新于2025-09-23 15:22:29
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Additional phase transition in a PbZr <sub/>0.87</sub> Ti <sub/>0.13</sub> O <sub/>3</sub> single crystal
摘要： PbZr1-xTixO3 (PZT) ceramics are one of the most known and widely used piezoelectric materials. In order to understand the origin of the high piezoelectricity it is essential to also understand its phase diagram. Many recent papers reported on the modification of PZT phase diagram based on ceramic experimental data. This is due to difficulties to get good quality single crystal samples. We have succeeded in getting a good quality single crystal with x= 0.13. Based on temperature changes of elastic properties we confirmed the existence of additional phase transition appearing in the PbZr0.87Ti0.13O3. The temperature dependence of the elastic properties was investigated by means of piezoelectric measurements and Brillouin light scattering. We discussed the correlation between anomalies of the elastic properties found in these measurements, and suggested that, except for the two well-known phase transitions, these anomalies point to another phase transition below Tc. The structure and symmetry of this crystal have been tested with use of the x-ray diffraction at the room temperature.
关键词： x-ray diffraction,phase transitions,elastic properties,piezoelectricity,PZT single crystals
更新于2025-09-23 15:22:29
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Integrated graphene/ferroelectric based plasmonic random access memory (P-RAM)
摘要： Using ferroelectric domains in lead zirconate titanate (PZT: PbZr0.3Ti0.7O3), we propose and simulate a graphene/ferroelectric-based integrated plasmonic random access memory (P-RAM). The proposed P-RAM poses bistable behavior between two transmission levels when the polarization of the ferroelectric film is switched via tuning an applied bias. Simulation results show that when a voltage applied to a 500-nm long P-RAM is swept from ?1.5 V to +6 V and vice versa, the possible extinction ratio is about 18 dB. This integrated P-RAM, operating at a wavelength of 7 μm, can be used as a memory by measuring two distinct levels of transmission. The proposed integrated memory device, also functioning as a latching plasmonic switch, does not require any external unit for generating the required plasmonic wave. In the ON state, the wavelength of the plasmonic mode prorating across the memory unit is ~156 nm. Its corresponding propagation length (~5.57 μm) is longer than two-and-a-half times the entire P-RAM length. This proposed integrated P-RAM of footprint 2 μm2 that does not suffer from coupling loss is a promising device for applications in the storage of information and the development of future plasmonic chips. To obtain the presented numerical results, we solve the full Maxwell equations, by the 3D finite element method (FEM), using the COMSOL multiphysics.
关键词： Ferroelectric,plasmonic random access memory,Graphene,lead zirconate titanate (PZT)
更新于2025-09-23 15:21:01
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Preparation and characterization of lead zirconate titanate thin films grown by RF magnetron sputtering for pyroelectric infrared detector arrays
摘要： One of the challenges in fabricating pyroelectric infrared (PIR) detector arrays using microelectromechanical system (MEMS) technique lies in finding an optimal growth method of sensing thin films. In this study, lead zirconate titanate (PbZr0.3Ti0.7O3, PZT) thin films were successfully prepared on Pt/TiO2/Si3N4/SiO2/Si substrates by RF magnetron sputtering. The structure, morphology and electrical properties of the films annealed at different temperatures were investigated. PZT thin films deposited at a working pressure of 3.0 Pa with an Ar/O2 gas flow ratio of 80/20 and annealed at 700 °C exhibited smooth surface and excellent dielectric, ferroelectric and pyroelectric properties. The dielectric constant and the loss tangent of the films are 500 and 0.018 at 1 kHz, respectively. The remnant polarization (Pr) and the coercive field (Ec) of the films are 33 μC cm?2 and 42 kV cm?1, respectively. The pyroelectric coefficient of the films is 0.033 μC cm?2 K?1. The value of the figure of merit of detectivity (FD) of PZT thin films reaches up to 1.29 × 10?5 Pa?1/2, which indicates that the films have met the requirements for sensitive layers utilized in pyroelectric infrared detector arrays.
关键词： RF magnetron sputtering,Pyroelectric infrared detector arrays,PZT thin films
更新于2025-09-23 15:21:01