1：Experimental Design and Method Selection:

The study uses impedance spectroscopy to analyze frequency-dependent characteristics of ferroelectric thin films. An equivalent circuit model is employed to represent the bulk and interface parts of the capacitor.

2：Sample Selection and Data Sources:

Pt/Pb(Zr0.52Ti0.48)O3/Pt thin film capacitors were fabricated on Pt/Ti/SiO2/Si substrates using the sol-gel process. Samples were measured at various switching cycles from pristine to 10^7 cycles.

3：52Ti48)O3/Pt thin film capacitors were fabricated on Pt/Ti/SiO2/Si substrates using the sol-gel process. Samples were measured at various switching cycles from pristine to 10^7 cycles. List of Experimental Equipment and Materials:

3. List of Experimental Equipment and Materials: Spin coater for film deposition, hot plate for baking, conventional furnace for annealing, e-beam evaporator for top electrode deposition, Radiant Technologies Precision LC II ferroelectric tester for P-V loop measurements, Agilent E4980A LCR meter for impedance spectroscopy.

4：Experimental Procedures and Operational Workflow:

Films were spin-coated, baked, and annealed. Top electrodes were deposited. P-V loops and impedance measurements were performed with varying frequencies from 20 Hz to 2 MHz and an AC voltage amplitude of 50 mV.

5：Data Analysis Methods:

Data were fitted to an equivalent circuit model using parameters from Cole-Cole plots. Statistical analysis of circuit parameters (capacitance, CPE parameters, resistance) was conducted at different switching stages.