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Phosphorus incorporation into graphitic material via hot pressing of graphite oxide and triphenylphosphine
摘要： It was shown, that the treatment of graphite oxide (GO) at a temperature of 1000 °C and a static pressure of 500 bar recovers the graphene layers. Addition of triphenylphosphine to GO helps in removal of oxygen during the treatment and allows introducing ca. 0.7 at% of phosphorus in the product. Most phosphorus atoms are bonded with oxygen as the 31P nuclear magnetic resonance spectrum showed. An analysis of the X-ray photoelectron P 2p spectrum additionally found the components corresponding to CeP and PeP bonding. Assembling of phosphorus atoms into nanometer clusters was con?rmed by transmission electron microscopy. Raman spectroscopy and electrical conductivity measurements revealed the n-type doping of graphitic material through the incorporation of phosphorus.
关键词： Triphenylphosphine,XPS,Phosphorus doping,NMR,Hot pressing,Graphite oxide
更新于2025-09-23 15:23:52
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Structural characterization and emission properties of phosphorus-doped NCD films
摘要： Phosphorus-doped NCD films were grown on n-type silicon substrate by plasma-enhanced CVD with H2, CH4, and PH3 gas mixture for cold cathode application. The structure properties were characterized by Raman spectroscopy with a green laser of 532 nm at room temperature, scanning electron microscope, transmission electron microscope, and electron energy-less spectroscopy. Grown films show a good conductivity and have a typical structure with a combination of sp3 diamond gains with size around 20-100 nm and sp2 grain boundaries. The electron emission properties were characterized as comparing with single crystal, NCD film, and tip-array NCD. The tip-array NCD shows good emission properties with lower threshold electric filed and higher saturation current.
关键词： Structural characterization,Nano crystal diamond (NCD),PECVD,electron emitter,Phosphorus doping
更新于2025-09-23 15:21:21
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Photocatalytic solar fuel production and environmental remediation through experimental and DFT based research on CdSe-QDs-coupled P-doped-g-C3N4 composites
摘要： Solar energy harvesting and conversion into useful chemical energy with the aid of semiconductor photocatalysts is a promising technique to solve both energy and environmental issues. This work reports a successful synthesis of CdSe quantum dots (QDs) modified phosphorus doped g-C3N4 (P-CN) for advanced photocatalytic applications. Phosphorus doping and structural coupling with CdSe QDs are shown to significantly extend visible-light response of g-C3N4 up to 700 nm. The optimized sample 4CdSe/P-CN demonstrates enhanced visible-light driven overall water splitting activities for H2 and O2 evolution i.e. 113 and 55.5 μmol.h?1.g?1, respectively, as well as very high photocatalytic CO2 to CH4 conversion efficiency (47 μmol.h?1.g?1). It also exhibit higher activity (78 %) for 2,4-dichlorophenol degradation as compared to pristine CN-sample. Combined photoluminescence, transient/single wavelength photocurrent, photoelectrochemical, and coumarin fluorescence spectroscopy demonstrate that 4CdSe/P-CN nanocomposite exhibit enhanced charge separation efficiency which is responsible for improved visible light catalytic activities. Our work thus provide a new strategy to design low-cost and sustainable photocatalysis with wide visible-light activity for practical overall water splitting and CO2 reduction applications.
关键词： Expending visible-light response,g-C3N4,Phosphorus doping,Solar fuel,CdSe quantum dots
更新于2025-09-23 15:21:01
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N-type doping of Ge by P spin on dopant and pulsed laser melting
摘要： N-type doping of Ge based on spin on dopant sources and pulsed laser melting has been proposed as an alternative to the use of complex and expensive techniques such as ion-implantation or molecular beam epitaxy. Optimization of the n+/p junction has been carried out with a KrF laser (of 22 ns pulse duration) by studying the effect of different laser fluences and the number of pulses. The diffusion profiles, sheet resistance, carrier density and mobility have been determined by secondary ion mass spectrometry and Van der Pauw–Hall measurements. By properly selecting the range of laser energy density and number of pulses, a high level of activation (>1019 cm?3) with good mobility (350–450 cm2 V?1 s?1) and low sheet resistance (<50 Ω/,) has been achieved. In addition, the good crystalline quality of the samples has been confirmed by high-resolution x-ray diffraction measurements, demonstrating the viability of such a low-cost manufacturing process for next generation Ge-based devices.
关键词： germanium,spin on dopant,phosphorus doping,semiconductors,pulsed laser melting
更新于2025-09-19 17:13:59
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AIP Conference Proceedings [AIP Publishing 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Fes, Morocco (25–27 March 2019)] 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Impact of the thermal budget of the emitter formation on the pFF of PERC+ solar cells
摘要： We develop processes for advanced phosphorus doping profiles in order to reduce the emitter saturation current density Jo,e of industrial bifacial PERC+ solar cells. With an in-situ oxidation, which takes place in the POCl3 furnace in between the deposition and the drive-in step, the surface concentration was lowered from 3 × 1020 cm-3 to 1.7 × 1020 cm-3. With an additional ex-situ oxidation, which takes place after the phosphorus silicate glass is removed, the phosphorus surface concentration was further reduced to 3 × 1019 cm- 3. The decreased phosphorus surface concentration drastically reduces Jo,e from 106 fA/cm2 down to 22 fA/cm2. The reduced Jo,e increases the implied open circuit voltage up to 712 mV of unmetallized PERC+ test structures and the Voc of PERC+ solar cells up to 678 mV and efficiencies up to 21.8%. However, our solar cell analysis reveals for the first time, that with increasing thermal budget of the applied POCl3 and oxidation recipes the pseudo fill factor (pFF) decreases by up to 1.5%. This corresponds to an efficiency loss of approximately 0.5%abs. We analyse the pFF loss based on different lifetime test structures representing the emitter or the bulk of the PERC+ solar cell. From the lifetime measurements we calculate I-V curves representing the implied fill factor (iFF) of the different parts of the PERC+ solar cell as well as a combined one for the whole cell, which compares well to the measured pFF. The iFF values clearly show that the pFF is mainly limited by wafer bulk material. However, also the iFF values of the emitter slightly decrease with increasing thermal budget.
关键词： in-situ oxidation,phosphorus doping profiles,pseudo fill factor,ex-situ oxidation,emitter saturation current density,PERC+ solar cells,thermal budget
更新于2025-09-12 10:27:22
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Size-dependent phosphorus doping effect in nanocrystalline-Si-based multilayers
摘要： Doping in Si nanocrystalline (Si NCs) is currently an interesting issue since it can modulate electronic structures of Si NCs and consequently affect the electric and optical properties. However, it has been reported that doping in Si NCs is quite difficult due to the self-purification effect and the locations of dopants such as phosphorus (P) and boron (B), as well as the influences of dopants on physical properties is still unclear. In the present work, the P-doped Si NCs/SiO2 multilayers with various dot sizes (2–20 nm) were fabricated. It is found that the electronic properties are enhanced significantly after doping. However, for P-doped samples, the conductivity is size-dependent and reduces with decreasing the dot size, which can be attributed to the reduction of activated carrier concentration in the film with small dot size. Moreover, we find P dopants can induce deep-level for sample with small size of 2 nm, and a sub-band near infrared light emission near 1250 nm is detected. The possible mechanism are discussed briefly.
关键词： Si nanocrystals,Luminescence,Phosphorus doping,Electronic performance,Size dependence
更新于2025-09-11 14:15:04
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Phosphorus-doped isotype g-C3N4/g-C3N4: an efficient charge transfer system for photoelectrochemical water oxidation
摘要： Constructing isotype g-C3N4/g-C3N4 heterojunction is an approach to improve the efficiency of g-C3N4 towards solar-assisted oxidation of water. Such functional configuration can effectively overcome the intrinsic drawback of rapid charge recombination of g-C3N4. Here, a modified g-C3N4, with homogeneous phosphorus doping, is prepared in this work through a phosphide-involved gas phase reaction. The resulting P-g-C3N4 displays altered electronic structure, including upshifted band edge potential, narrowed band gap and improved electronic conductivity. These features allow P-g-C3N4 as an outstanding candidate to form isotype junction with pristine g-C3N4. As expected, the accelerated charge separation and migration in target junction is validated by various measurements. The isotype g-C3N4/P-g-C3N4 heterojunction achieves a optimized photocurrent as high as 0.3 mA·cm-2 at 1.23 V vs RHE (AM 1.5G, 100 mW·cm-2), representing 8-fold’s enhancement compared with pristine g-C3N4. The present strategy for constructing g-C3N4-based isotype heterojunction networks is found effective for large-scale manufacturing.
关键词： phosphorus doping,g-C3N4,charge transfer,isotype heterojunction,photoelectrochemical
更新于2025-09-10 09:29:36
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Solution combustion synthesis and characterization of phosphorus doped TiO2–CeO2 nanocomposite for photocatalytic applications
摘要： Phosphorus doped TiO2-CeO2 nanocomposite (P-TiO2-CeO2) was synthesized by solution combustion method. The prepared sample has been heated at di?erent temperatures and characterized by X-ray di?raction (XRD), scanning electron microscopy (SEM), UV–vis absorption spectra, X-ray photoelectron spctroscopy (XPS). XRD analysis reveals the retarded phase transition by increased thermal stability due to phosphorus doping. FE-SEM shows the porous structure of the sample. The absorption edge of the P/TiO2-CeO2 nanocomposite exhibits redshift with increasing heating temperature with its value around 2.93 eV, 2.90 eV and 2.89 eV at 400 °C, 500 °C and 600 °C respectively. From the observed P2p XPS peak, it is con?rmed that the doped phosphorus enters substitutionally into Ce4+/Ti4+ site, which can play an important role in the photocatalytic activity of the sample. The binding energy of Ti 2p XPS peak increases slightly from 458.5 eV to 458.8 eV due to interaction between titanium and cerium.
关键词： Phosphorus doping,TiO2,CeO2,XPS,TiO2-CeO2 nanocomposite
更新于2025-09-04 15:30:14