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Photodetector with Controlled Relocation of Carrier Density Peaks: Concept and Numerical Simulation
摘要： Modern electronics faces the degradation of metal interconnection performance in integrated circuits with nanoscale feature dimensions of transistors. The application of constructively and technologically integrated optical links instead of metal wires is a promising way of the problem solution. Previously, we proposed the advanced design of an on-chip injection laser with an AIIIBV nanoheterostructure, and a functionally integrated optical modulator. To implement the efficient laser-modulator-based optical interconnections, technologically compatible photodetectors with subpicosecond response time and sufficient sensitivity are required. In this paper, we introduce the concept of a novel high-speed photodetector with controlled relocation of carrier density peaks. The device includes a traditional p-i-n photosensitive junction and an orthogonally oriented control heterostructure. The transverse electric field displaces the peaks of electron and hole densities into the regions with low carrier mobilities and lifetimes during the back edge of an optical pulse. This relocation results in the fast decline of photocurrent that does not depend on the longitudinal transport of electrons and holes. We develop a combined numerical model based on the Schrodinger-Poisson equation system to estimate the response time of the photodetector. According to the simulation results, the steep part of the photocurrent back edge has a duration of about 0.1 ps.
关键词： combined numerical model,high-speed AIIIBV optoelectronic devices,photodetector with controlled relocation of carrier density peaks,on-chip optical interconnections,Schrodinger-Poisson equation system
更新于2025-09-23 15:19:57
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Efficient photodiode-type photodetectors with perovskite thin films derived from MAPbI3 single-crystal precursor
摘要： Perovskite photosensitive layer plays an important role on the photoelectric properties of photodetector (PD). Here, precursor solution comprising methylammonium lead iodide (MAPbI3) single-crystal is applied to prepare perovskite film to enlarge the grain size of perovskite photosensitive layer and improve the detectivity of PD device. Compared with the traditional precursor solution composed of raw-materials (MAI+PbI2), perovskite film derived from MAPbI3 single-crystal precursor possesses high crystalline quality with large grain sizes, enhanced light absorption intensity and long carrier lifetime. Thus, the PD device based on perovskite photosensitive layer derived from MAPbI3 single-crystal precursor achieves an improved responsivity of 0.633 A W?1 and an optimized detectivity of 2.502×1011 Jones under 660 nm illumination with a light intensity of 1.25 mW cm?2 at ?0.4 V. This research highlights an innovative application of perovskite single-crystal for thin film devices.
关键词： perovskite,photosensitive layer,single-crystal precursor,photodetector
更新于2025-09-23 15:19:57
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Fabrication and Characterization of Ni-Doped ZnO Nanorod Arrays for UV Photodetector Application
摘要： In this work, the structure morphologies, lattices, and optical properties of zinc oxide (ZnO) nanorods (NRs) with various amounts of nickel (Ni) dopants were investigated and explored. The 100 nm ZnO seed layer was grown on the Corning glass substrate by the radio frequency (RF) magnetron sputtering technique, and the chemical bath deposition (CBD) method was used to grow NR arrays. It was found that the Ni concentration of the sample is 1.06 at% by EDX spectra examination. All the NRs exhibited a hexagonal wurtzite structure and preferentially grew along the c-axis on the substrate. Additionally, the ultraviolet (UV) photodetectors (PDs) with Ni-doped ZnO (NZO) NRs based on metal-semiconductor-metal (MSM) structure were fabricated through a photolithography process. Then, such a sample was annealed at 500 °C to obtain good performance and reduced oxygen vacancy (～560 nm). The results showed that the NZO NRs were with an excellent photosensitivity for UV PD applications and a faster rise/decay time than pure ZnO. Furthermore, with a 3 V applied bias and 380 nm UV illumination, the sensitivities of the fabricated ZnO PDs with different Ni contents (0, 4, and 8 mM) were 71.45, 393.04, and 238.75, respectively.
关键词： nanorod arrays,photolithography process,chemical bath deposition,UV photodetector,Ni-doped ZnO
更新于2025-09-23 15:19:57
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High Sensitivity and Fast Response Self-Powered Solar-Blind Ultraviolet Photodetector with ?2-Ga2O3/Spiro-MeOTAD p-n Heterojunction
摘要： Solar-blind ultraviolet (UV) photodetectors are greatly desired in number of areas in terms of the military and civilian purposes, especially self-powered devices driven by the photovoltaic effect. Herein, a solar blind photodetector has been successfully achieved on a Spiro-MeOTAD/β-Ga2O3 organic-inorganic hybrid construction. The fabricated photodetector can operate with self-powered mode and show an obvious photodetection with a narrow spectrum region, exhibiting a high responsivity (65 mA/W) and a large external quantum efficiency (32％) under low power intensity (~1 μW/cm2) UV illumination, at zero bias. Fortunately, the device shows a fast temporal pulse response (τrise~2.98 μs and τdecay~28.49 μs), which is superior to the previously reported Ga2O3 based self-powered photodetectors. More importantly, the photodetector can operate stably and shows good repeatability. These excellent performances of device could be attributed to the pre-existing band alignment of the Ga2O3 and Spiro-MeOTAD, and are comparable to and/or even higher than those of other self-powered solar-blind UV photodetectors, which indicate that the design of device configuration based on a Ga2O3/Spiro-MeOTAD heterojunction is certified as an excellent candidate for high sensitivity, ultrafast response and self-powered photo-detecting device for solar-blind UV signal.
关键词： β-Ga2O3,Spiro-MeOTAD,photodetector,Solar-blind ultraviolet,self-powered,heterojunction
更新于2025-09-23 15:19:57
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Design of a Surface Plasmon Resonance-Enhanced ZnO Ultraviolet Photodetector Based on a Sub-wavelength Metal Grating Covered with a High-Refractive-Index Medium
摘要： To realize a surface plasmon resonance-enhanced zinc oxide (ZnO) ultraviolet photodetector based on a sub-wavelength metal grating, we take advantage of the sensitivity of the resonance condition of a sub-wavelength metal grating to the refractive index of the surrounding medium. We theoretically design a sub-wavelength Ag grating covered with a high-refractive-index medium layer and apply it to a ZnO ultraviolet photodetector. By optimizing the parameters (angle of incidence, grating period, grating spacing, grating thickness, high-refractive-index medium layer thickness, refractive index of the covering), the optical ?eld is localized at the interface of the sub-wavelength Ag grating and the ZnO thin ?lm; that is, surface plasmon resonance is realized within the device. Compared with the device without a high-refractive-index medium layer, the maximum absorption enhancement factor of the designed device can reach up to 108. This work will provide theoretical guidance to realize a surface plasmon resonance-enhanced ZnO ultraviolet photodetector with a sub-wavelength metal grating.
关键词： ultraviolet photodetector,ZnO,sub-wavelength metal grating,Surface plasmon resonance
更新于2025-09-23 15:19:57
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Photocarrier relaxation pathway in selenium quantum dots and its application for UV-Vis photodetecting
摘要： Chain-like materials have recently attracted significant attention due to their unique structure and outstanding electro-optical properties. However, the photocarrier dynamics and pathways in these materials that determine the electro-optical performances of the prepared devices have barely been touched. Herein, one typical chain-like materials e quantum dots (Se QDs) were prepared via a facile liquid phase exfoliation approach. The photocarrier dynamics in selenium quantum dots were systematically investigated via ultrafast transient absorption spectroscopy in the ultraviolet-visible regime. Four photocarrier decay pathways with different lifetime times were firstly detected, endues the elucidation and reconstruction of the energy schematic diagram of Se QDs. Thanks to the broadband photo-response and fast recovery time of Se QDs, a photoelectrochemical (PEC)-typed photodetector was proposed for the first time to our knowledge, demonstrating excellent photodetection properties. Considering the feasible fabrication method and clear photocarrier pathways, the excellent photocurrent density and stability of this photodetector undoubtedly guarantee the promising of selenium for advanced photonics devices.
关键词： broadband photo-response,photocarrier dynamics,ultrafast transient absorption spectroscopy,selenium quantum dots,photoelectrochemical photodetector
更新于2025-09-23 15:19:57
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Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors
摘要： Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.
关键词： nanowire,III-V semiconductor,infrared photodetector
更新于2025-09-23 15:19:57
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Development and characterization of TlGaSe2 thin film-based photodetector for visible-light photodetector applications
摘要： In current work a thermal evaporation technique has been employed to fabricate the thin films from the grown TlGaSe2 single crystal and investigated. X-ray diffraction study revealed the formation of polycrystalline films of monoclinic crystal system. The crystallite size was estimated to be 11 nm. Atomic force and scanning electron microscopy studies shows the nanocrystalline film fabrication and the size of grain was estimated. Optical study shows that the grown film is about 55% transparent in 800–1500 nm region and possess a sharp absorption edge. The direct energy gap of TlGaSe2 films was estimated around 2.31 eV. The photo current of the fabricated TlGaSe2 photodetector increases about 6 times compare to dark when exposed under 5 mW/cm2 illumination. The fabricated detector possesses high external quantum efficiency of 158% and also the detectivity reached to 5.16 ? 1010 at V ? 10 V. The on/off behaviour of the device was also studied and found that the response time for growth and decay is 88 ms and 90 ms, respectively.
关键词： A. Thin film,D. optical properties,C. X-ray diffraction,B. thermal evaporation,D. electrical properties,D. photodetector
更新于2025-09-23 15:19:57
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Organic-inorganic hybrid heterostructures towards long-wavelength photodetectors based on InGaZnO-Polymer
摘要： Organic-inorganic hybrid heterostructures have attracted considerable attentions due to their wide application in electronics and optoelectronics. In this study, a high-performance red light photodetector based on organic-inorganic heterostructure was successfully fabricated after a systematical optimization in material and device constitution. The conjugated polymer (P(PDI-BDT-O)) with narrow band gap used as light absorber was combined with a layer of indium gallium zinc oxide (IGZO) to construct a bi-layered phototransistor achieving a high mobility as well as high photoresponsivity. Benefiting from both the high absorption coefficient of the polymer over a wide range of wavelength and the perfect matching of band level between polymer and IGZO, the device exhibits an ultrahigh photoresponsivity (212 A/W) and specfic detectivity (2 ? 1012 Jones) for red light at the wavelength of 633 nm. These results demonstrate the great potential of organic-inorganic heterostructures in the application of long-wavelength photodetectors.
关键词： Conjugated polymer,Oxide semiconductor,Organic-inorganic heterostructures,Red light photodetector
更新于2025-09-23 15:19:57
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Novel Self-Powered Photodetector with Binary Photoswitching Based on SnS <sub/><i>x</i> </sub> /TiO <sub/>2</sub> Heterojunctions
摘要： Binary photoresponse characteristics can realize the optical signal processing and logic operations. The UV photodetectors (PDs) with SnSx nanoflakes and TiO2 nanorod arrays (NRs) show a novel binary photoswitching behavior (change in current from positive to negative) by manipulating the light wavelength without external power source, utilizing the interfacial recombination of the photogenerated carriers in the type-I SnSx/TiO2 heterojunctions. The enhanced responsivity (R*) and detectivity and fast photoresponse time for self-powered SnSx/TiO2 PDs can be achieved by adjusting the phase ratio of SnS and SnS2 nanoflakes. The binary photoswitching in the self-powered UV PDs can be applied in the encrypted optical signal processing and imaging in some special conditions without external bias.
关键词： self-powered photodetector,SnSx/TiO2,binary photoresponse,heterojunctions
更新于2025-09-23 15:19:57