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A New Hands-on Course in Characterization of Wide Bandgap Devices
摘要： As wide bandgap (WBG) devices and applications move from niche to mainstream, a new generation of engineers trained in this area is critical to continue the development of the field. This paper introduces a new hands-on course in characterization of WBG devices, which is an emerging and fundamental topic in WBG-based techniques. First, the lecture-simulation-experiment format based course structure and design considerations, such as safety, are presented. Then the necessary facilities to support this hands-on course are summarized, including classroom preparation, software tools, and laboratory equipment. Afterward, the detailed course implementation flow is presented to illustrate the approach of close interaction among lecture, simulation, and experiment to maximize students’ learning outcomes. Finally, grading for students and course evaluation by students are discussed with the findings and potential improvements highlighted. Detailed course materials are provided via potenntial.eecs.utk.edu/WBGLab for educational use.
关键词： electrical engineering education,power electronics,hands-on training,WBG devices
更新于2025-09-23 15:23:52
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A review of the most recent progresses of state-of-art gallium oxide power devices
摘要： Until very recently, gallium oxide (Ga2O3) has aroused more and more interests in the area of power electronics due to its ultra-wide bandgap of 4.5–4.8 eV, estimated critical field of 8 MV/cm and decent intrinsic electron mobility limit of 250 cm2/(V·s), yielding a high Baliga’s figures-of-merit (FOM) of more than 3000, which is several times higher than GaN and SiC. In addition to its excellent material properties, potential low-cost and large size substrate through melt-grown methodology also endows β-Ga2O3 more potential for future low-cost power devices. This article focuses on reviewing the most recent advances of β-Ga2O3 based power devices. It will be starting with a brief introduction to the material properties of β-Ga2O3 and then the growth techniques of its native substrate, followed by the thin film epitaxial growth. The performance of state-of-art β-Ga2O3 devices, including diodes and FETs are fully discussed and compared. Finally, potential solutions to the challenges of β-Ga2O3 are also discussed and explored.
关键词： power electronics,power devices,gallium oxide
更新于2025-09-23 15:22:29
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A Hybrid MMC-Based Photovoltaic and Battery Energy Storage System
摘要： This paper proposes a new configuration and its control strategy for a modular multilevel converter (MMC)-based photovoltaic (PV)-battery energy storage (BES) system. In the MMC-based PV-BES system, each PV submodule is interfaced from its dc side with multiple PV generators using isolated dual active bridge (DAB) dc-dc converters. One BES system is embedded into each arm of the converter and is connected to the dc port of the associated BES submodule using multiple isolated DAB converters. The embedded BES systems are used to smooth the output power of the PV generators and limit the rate of change of the power delivered to the host grid. Moreover, they enable compensation of power mismatches between the arms and legs of the system by exchanging power with the arms of the converter. The paper then proposes a hybrid power mismatch elimination strategy using a combination of power exchange with the arms of the converter and internal power flow control of the MMC. The proposed hybrid power mismatch elimination strategy employs BES systems and differential currents to compensate power mismatches and transfer power between the arms and legs of the converter, respectively. The effectiveness of the proposed power smoothing technique using the embedded BES systems and hybrid power mismatch elimination strategy is demonstrated using time-domain simulations conducted on a switched model of the PV-BES system in PSCAD/EMTDC software environment.
关键词： control,modular multilevel converter,power electronics,battery energy storage,photovoltaic,power mismatch,Differential current,energy conversion,integration
更新于2025-09-23 15:22:29
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Regional Manufacturing Cost Structures and Supply Chain Considerations for SiC Power Electronics in Medium Voltage Motor Drives
摘要： With the growth in wide bandgap (WBG) semiconductors, specifically Silicon Carbide (SiC), the technology has matured enough to highlight a need to understand the drivers of manufacturing cost, regional manufacturing costs, and plant location decisions. Further, ongoing research and investment, necessitates analytical analysis to help inform development of wide bandgap technologies. The paper explores the anticipated device, module, and motor drive cost at volume manufacturing. It additionally outlines the current regional contributors to the supply chain and proposes how the base models can be used to evaluate the cost reduction potential of proposed research advances.
关键词： Wide bandgap,Supply chain,SiC,Wide-band gap,Wideband gap,Techno-economic,WBG,bottoms-up,Medium voltage,Motor drive,Wide band-gap,Analysis,Power electronics,Cost model
更新于2025-09-23 15:22:29
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[IEEE IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society - D.C., DC, USA (2018.10.21-2018.10.23)] IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society - Controller-Hardware-in-the-Loop Testbed for Fast-Switching SiC-Based 50-kW PV Inverter
摘要： The recent advent of wide bandgap power semiconductor devices will lay the path for future power converters. These devices provide the advantage of high switching speed and lower losses. The high cost and high switching speeds of these devices provide a challenge in the development and validation of the fast-switching inverter controls with accuracy comparable to that of a hardware setup. In this paper, a field programmable gate array (FPGA) real-time simulator-based controller-hardware-in-the-loop (CHIL) testbed is used to verify the low-level and advanced inverter controls for fast-switching wide bandgap-based photovoltaic string inverter. The paper also includes development of the CHIL testbed, which is run at a time step of 500 ns in order to implement 20-kHz switching frequency. The developed CHIL testbed is validated through experimental results from a three-phase, 50-kW, 480-VLLrms SiC device-based inverter.
关键词： controller hardware-in-the-loop,high switching frequency,SiC devices,power electronics converters,advanced grid-support functions
更新于2025-09-23 15:22:29
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Picosecond-Range Avalanche Switching of Bulk Semiconductors Triggered by Steep High-Voltage Pulses
摘要： Experimental observation and numerical simulations of sub-nanosecond avalanche switching of Si and ZnSe bulk semiconductor structures initiated by high-voltage pulses with steep (dU/dt > 10 kV/ns) ramp are reported. The measured switching time is ～100 ps. The switching is sustainable and repetitive and has negligible jitter. Comparison of the experimental and numerical results suggests that after switching, the whole volume of the structure is uniformly ?lled with nonequilibrium electron–hole plasma.
关键词： semiconductor lasers,Power electronics,pulse-power system switches
更新于2025-09-23 15:21:21
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High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions
摘要： This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology barriers preventing SiC power devices from performing to their fullest ability were identified. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were described, and the concept for a novel SiC power module was discussed.
关键词： wide bandgap,3D packaging,high power density,power electronics,wire bondless
更新于2025-09-23 15:21:01
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High-selectivity bandpass filter using six pairs of quarter-wavelength coupled lines
摘要： We present a 16-channel readout integrated circuit (ROIC) with nanosecond-resolution time to digital converter (TDC) for pixelated Cadmium Telluride (CdTe) gamma-ray detectors. The pixel array ROIC is the proof of concept of the pixel array readout ASIC for positron-emission tomography (PET) scanner, positron-emission mammography (PEM) scanner, and Compton gamma camera. The electronics of each individual pixel integrates an analog front-end with switchable gain, an analog to digital converter (ADC), configuration registers, and a 4-state digital controller. For every detected photon, the pixel electronics provides the energy deposited in the detector with 10-bit resolution, and a fast trigger signal for time stamp. The ASIC contains the 16-pixel matrix electronics, a digital controller, five global voltage references, a TDC, a temperature sensor, and a band-gap based current reference. The ASIC has been fabricated with TSMC m mixed-signal CMOS technology and occupies an area of mm. The TDC shows a resolution mm of 95.5 ps, a precision of 600 ps at full width half maximum W. In acquisition (FWHM), and a power consumption of mode, the total power consumption of every pixel is W. An equivalent noise charge (ENC) of at maximum gain and negative polarity conditions has been measured at room temperature.
关键词： positron emission tomography,low-power electronics,semiconductor radiation detectors,application specific integrated circuits,gamma-ray detectors,Analog-digital conversion,energy resolution
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Doped Layer Characterization Using Accurate Optical Modelling of Mid-Infrared Spectrometry
摘要： We present a 16-channel readout integrated circuit (ROIC) with nanosecond-resolution time to digital converter (TDC) for pixelated Cadmium Telluride (CdTe) gamma-ray detectors. The pixel array ROIC is the proof of concept of the pixel array readout ASIC for positron-emission tomography (PET) scanner, positron-emission mammography (PEM) scanner, and Compton gamma camera. The electronics of each individual pixel integrates an analog front-end with switchable gain, an analog to digital converter (ADC), con?guration registers, and a 4-state digital controller. For every detected photon, the pixel electronics provides the energy deposited in the detector with 10-bit resolution, and a fast trigger signal for time stamp. The ASIC contains the 16-pixel matrix electronics, a digital controller, ?ve global voltage references, a TDC, a temperature sensor, and a band-gap based current reference. The ASIC has been fabricated with TSMC m mixed-signal CMOS technology and occupies an area of mm. The TDC shows a resolution mm of 95.5 ps, a precision of 600 ps at full width half maximum W. In acquisition (FWHM), and a power consumption of mode, the total power consumption of every pixel is W. An equivalent noise charge (ENC) of at maximum gain and negative polarity conditions has been measured at room temperature.
关键词： positron emission tomography,low-power electronics,application speci?c integrated circuits,semiconductor radiation detectors,gamma-ray detectors,Analog-digital conversion,energy resolution
更新于2025-09-23 15:21:01
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Wafer Scale Graphene Field Effect Transistors on Thin Thermal Oxide
摘要： In this study, we present the feasibility to fabricate back-gated graphene field-effect transistors (GFETs) on 10 nm thermal SiO2 substrate. Here, we compare the mobility of graphene devices at different locations of the transferred CVD graphene. We observed that there is a n-type doping of the graphene devices with Dirac points within ± 0.5 V from an ideal value of 0 V. The downscaling of the back-gate dielectric thickness reduces the operating voltage range, commonly required for low power electronics, and the devices are stable during operation in air under ambient conditions. The extracted contact resistance is comparable to the earlier reports found in literature and this provides a feasibility to fabricate low power futuristic graphene based nanoelectronics.
关键词： CVD graphene,n-type doping,thermal SiO2,mobility,Dirac points,low power electronics,field-effect transistors,graphene,contact resistance
更新于2025-09-23 15:21:01