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AN EXPLORATION INTO THE QUANTUM CONFINEMENT OF CTS/NATURAL DYE CORE- SHELL QUANTUM DOTS
摘要： In this work, we have presented a simple way of changing the confinement energies of Copper Tin Sulphide (CTS) quantum dots using natural dyes as shell material. Tetragonal CTS quantum dots in the size range of 1.7nm- 2.2nm, of bandgaps of 2.48eV and 5.0 eV were prepared by means of a green colloidal synthesis technique. These quantum dots were treated with natural dyes such as onion and beetroot skin dyes. Pelargonidin and Betanin (pigments of onion and beetroot skin dye respectively) formed hydrogen bonding with the capping agent, thus forming a shell around the CTS quantum dots. The change in confinement due to the effect of dye as shell was studied from absorption, photoluminescence and infrared spectroscopic techniques. The transitions occurring were analysed using a theoretical approach. CTS quantum dots, with its high transmittance in a wide range of wavelengths find promising applications in the buffer layer of solar cells.
关键词： Betanin,Copper tin sulphide,quantum dots,Pelargonidin,colloidal synthesis,quantum confinement
更新于2025-09-12 10:27:22
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Alloyed Ag2SexS1-x quantum dots with red to NIR shift: the band gap tuning with dopant content for energy harvesting applications
摘要： Alloyed quantum dots have pulled in a large consideration because of their fascination from visible to near infrared regime. In this work, quantum dots of alloyed Ag2SexS1-x (x = 0, 0.4, 0.6, 1.0) system are synthesized by making use of a simple intermediate temperature method. The structure and morphology of Ag2SexS1-x quantum dots are examined through X-ray diffraction, Fourier-transform infrared spectroscopy, transmission electron microscopy, and Raman spectroscopy. The X-ray diffraction data indicates monoclinic and orthorhombic structure of Ag2SexS1-x quantum dots. The size and composition controlled optical bandgap of Ag2SexS1-x quantum dots is meticulously looked into by Ultraviolet-Visible-Near Infrared absorption spectroscopy. The size of alloyed Ag2SexS1-x quantum dots varies from 3.5 nm to 4.8 nm. The bandgap of Ag2SexS1-x quantum dots has varied from 1.35 eV to 0.88 eV as calculated by Tauc plot. The observed values of bandgap indicate quantum confinement in two regimes-weak and strong confinement regimes. The results show that quantum confinement depends on both the size and composition of Ag2SexS1-x quantum dots. The alloying of Se to Ag2S has been confirmed using the Raman spectroscopy. These alloyed quantum dots might be reasonable for catching solar energy particularly from visible to NIR regime.
关键词： Alloyed Quantum Dots,Solar Energy,Quantum Confinement,Optical Band Gap
更新于2025-09-12 10:27:22
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Surface/edge functionalized boron nitride quantum dots: Spectroscopic fingerprint of bandgap modification by chemical functionalization
摘要： Promising properties of boron nitride nanomaterials such as their chemical, thermal, and mechanical stability have made them suitable materials in a various range of applications. However, their low electrical conductivity and wide bandgap, particularly in the case of boron nitride quantum dots (BNQDs), have given rise to severe limitations. Efforts on bandgap engineering through doping and surface functionalization have gained little success due to their high thermodynamic stability and inertness. Herein, we present a novel approach to functionalize BNQDs by hydroxyl, methyl, and amine functional groups aiming to adjust the electronic structure. The successful exfoliation is demonstrated by transmission electron microscopy, and surface functionalization is elaborated by FTIR and XPS. Modifications of the electronic and optical properties are shown by UV–Vis and PL measurements. The formation of two absorption edges in bandgaps of BNQDs due to the delocalizing of the Px and Pz orbitals as result of edge/surface passivating groups is demonstrated. Splitting of the main transition bandgap of bulk BN from 5.9 eV to two absorption edges for hydroxyl (2.3-3.6 eV), methyl (3.2-4.2 eV), and amine (3.1-4 eV) is shown. These findings offer a bandgap engineering approach for BNQDs, which can boost their applications in quantum emitters (nanophotonics) and photovoltaic devices.
关键词： Surface science,Nanoparticle semiconductor,Quantum confinement,Bandgap engineering
更新于2025-09-12 10:27:22
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Confinement Effects and Charge Dynamics in Zn <sub/>3</sub> N <sub/>2</sub> Colloidal Quantum Dots: Implications for QD-LED displays.
摘要： Zinc nitride (Zn3N2) colloidal quantum dots are composed of non-toxic, low-cost and earth-abundant elements. The effects of quantum confinement on the optical properties and charge dynamics of these dots are studied using steady state optical characterization and ultrafast fluence-dependent transient absorption. The absorption and emission energies are observed to be size tunable, with the optical band gap increasing from 1.5 eV to 3.2 eV as the dot diameter decreased from 8.9 nm to 2.7 nm. Size dependent absorption cross sections (?? = 1.22 ± 0.02 ? 10-15 cm2 to 2.04 ± 0.03 ? 10-15 cm2), single exciton lifetimes (0.36 ± 0.02 ns to 0.65 ± 0.03 ns), as well as Auger recombination lifetimes of biexcitons (3.2 ± 0.4 ps to 5.0 ± 0.1 ps) and trions (20.8 ± 1.8 ps to 46.3 ± 1.3 ps) are also measured. The degeneracy of the conduction band minimum (?? = 2) is determined from the analysis of the transient absorption spectra at different excitation fluences. The performance of Zn3N2 colloidal quantum dots thus broadly matches that of established visible light emitting quantum dots based on toxic or rare elements, making them a viable alternative for QD-LED displays.
关键词： charge dynamics,zinc nitride,quantum confinement,QD-LED,quantum dots
更新于2025-09-11 14:15:04
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Nanoplatelet modulation in 2D/3D perovskite targeting efficient light-emitting diodes
摘要： Light-emitting diodes (LEDs) based on two-dimensional (2D) perovskite nanoplatelets exhibit high electroluminescence (EL) efficiency because of the quantum confinement effect, which increases electron–hole recombination to promote radiative emission. It is well-known that a 2D nanoplatelet structure (?n? = 1) is detrimental for luminescence efficiency due to possible thermal quenching of excitons at room temperature. Here, a simple strategy is developed to suppress growth of NMA2PbBr4 (?n? = 1) nanoplatelets by carefully tuning the precursor ratio of cesium bromide (CsBr), formamidinium bromide (FABr) and 1-naphthylmethylammonium bromide (NMABr). The sub-domain size of the perovskite crystal decreases as the long-chain ligand NMABr ratio increases, leading to enhanced photoluminescence quantum yields (PLQY) due to size confinement effect when the NMABr ratio is below 60%. Unfortunately, the NMA2PbBr4 component in 2D/3D perovskites also grows with increasing NMABr ratio, which results in poor EL efficiency. FABr incorporation can provide additional control over suppression of NMA2PbBr4 growth in 2D/3D perovskites. A compact and uniform perovskite film with reduced NMA2PbBr4 content achieves PLQY of ～61%. Benefiting from these features, a green perovskite LED yields current efficiency of 46.8 cd A?1 with an external quantum efficiency of 14.9%. This study paves a new way to modulate the crystal structure in perovskites via a simple and effective method for high-performance LEDs.
关键词： light-emitting diodes,perovskite,quantum confinement,electroluminescence,nanoplatelets
更新于2025-09-11 14:15:04
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Quantum Hall stripes in high-density GaAs/AlGaAs quantum wells
摘要： We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density (ne > 4 × 1011 cm?2) which is expected to favor QHS orientation along the unconventional (cid:2)1ˉ10(cid:3) crystal axis and along the in-plane magnetic ?eld B(cid:4). Surprisingly, we ?nd that at B(cid:4) = 0 QHSs in our samples are aligned along the (cid:2)110(cid:3) direction and can be reoriented only perpendicular to B(cid:4). These ?ndings suggest that high density alone is not a decisive factor for either abnormal native QHS orientation or alignment with respect to B(cid:4), while quantum con?nement of the 2DEG likely plays an important role.
关键词： quantum confinement,high carrier density,in-plane magnetic field,quantum Hall stripes,GaAs/AlGaAs quantum wells
更新于2025-09-09 09:28:46
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Applied Nanophotonics || Quantum confinement effects in semiconductors
摘要： Absorption and emission of light by atoms, molecules, and solids arise from electron transitions. Electron confinement phenomena in solids with restricted geometry like nanoparticles, nanorods, or nanoplatelets gives rise to the modification of optical absorption and emission spectra and transition probabilities in semiconductor nanostructures. These phenomena are direct consequences of the wave properties of electrons. In this chapter we describe size-dependent optical properties of semiconductor nanostructures related to quantum confinement.
关键词： optical absorption,semiconductors,nanostructures,emission spectra,Quantum confinement
更新于2025-09-09 09:28:46
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A Scanning Tunneling Microscopy Study of Monolayer and Bilayer Transition-Metal Dichalcogenides Grown by Molecular-Beam Epitaxy
摘要： This review presents an account of some recent scanning tunneling microscopy and spectroscopy (STM/S) studies of monolayer and bilayer transition-metal dichalcogenide (TMD) films grown by molecular-beam epitaxy (MBE). In addition to some intrinsic properties revealed by STM/S, defects such as inversion domain boundaries and point defects, their properties and induced effects, are presented. More specifically, the quantum confinement and moiré potential effects, charge state transition, quasi-particle interference and structural phase transition as revealed by STM/S are described.
关键词： transition-metal dichalcogenides,quantum confinement,structural phase transition,molecular-beam epitaxy,moiré potential,quasi-particle interference,scanning tunneling microscopy,charge state transition
更新于2025-09-09 09:28:46
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Nanowires for energy: A review
摘要： Semiconductor nanowires (NWs) represent a new class of materials and a shift from conventional two-dimensional bulk thin films to three-dimensional devices. Unlike thin film technology, lattice mismatch strain in NWs can be relaxed elastically at the NW free surface without dislocations. This capability can be used to grow unique heterostructures and to grow III-V NWs directly on inexpensive substrates, such as Si, rather than lattice-matched but more expensive III-V substrates. This capability, along with other unique properties (quantum confinement and light trapping), makes NWs of great interest for next generation optoelectronic devices with improved performance, new functionalities, and reduced cost. One of the many applications of NWs includes energy conversion. This review will outline applications of NWs in photovoltaics, thermoelectrics, and betavoltaics (direct conversion of solar, thermal, and nuclear energy, respectively, into electrical energy) with an emphasis on III-V materials. By transitioning away from bulk semiconductor thin films or wafers, high efficiency photovoltaic cells comprised of III-V NWs grown on Si would improve performance and take advantage of cheaper materials, larger wafer sizes, and improved economies of scale associated with the mature Si industry. The thermoelectric effect enables a conversion of heat into electrical power via the Seebeck effect. NWs present an opportunity to increase the figure of merit (ZT) of thermoelectric devices by decreasing the thermal conductivity (j) due to surface phonon backscattering from the NW surface boundaries. Quantum confinement in sufficiently thin NWs can also increase the Seebeck coefficient by modification of the electronic density of states. Prospects for III-V NWs in thermoelectric devices, including solar thermoelectric generators, are discussed. Finally, betavoltaics refers to the direct generation of electrical power in a semiconductor from a radioactive source. This betavoltaic process is similar to photovoltaics in which photon energy is converted to electrical energy. In betavoltaics, however, energetic electrons (beta particles) are used instead of photons to create electron-hole pairs in the semiconductor by impact ionization. NWs offer the opportunity for improved beta capture efficiency by almost completely surrounding the radioisotope with semiconductor material. Improving the efficiency is important in betavoltaic design because of the high cost of materials and manufacturing, regulatory restrictions on the amount of radioactive material used, and the enabling of new applications with higher power requirements.
关键词： photovoltaics,light trapping,nanowires,quantum confinement,thermoelectrics,lattice mismatch,betavoltaics,III-V materials,semiconductor,energy conversion
更新于2025-09-09 09:28:46
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Photoluminescence from GaAs nanostructures
摘要： The confinement properties of semiconductor nanostructures have promising potential in technological application. The main objective of this study is to describe the dependence of Photoluminescence (PL) intensity on different parameters like temperature, excitation wavelength, time and photon energy of GaAs quantum dots (QDs). The model equations are numerically analyzed and simulated with matlab and FORTRAN codes. The experimental fitted values and physical properties of materials are used as data source for our simulation. The result shows that at low temperature the peak is quite sharp, as temperature increases the PL intensity decreases and get quenched at particular thermal energy.
关键词： quantum confinement,Photoluminescence (PL) intensity,GaAs quantum dots,nanostructures,thermal quenching energy
更新于2025-09-04 15:30:14