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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Reliability Investigation of 4H-SiC MOSFET Based on TCAD Simulation
摘要： The reliability of 4H-SiC MOSFET was investigated based on TCAD simulation. The results shown that the leakage current was increased with the increment of ambient temperature while the breakdown voltage almost kept constant. Localized electric field focalizing indicated that a local breakdown region was located between P-base and JFET region. Significantly, the SiC MOSFET would be damaged from metal electrodes melting and gate oxide breaking down under short-circuit condition owing to localized hotspot.
关键词： TCAD,hotspot,reliability,4H-SiC MOSFET
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - 4H-SiC Junction Barrier Schottky Diodes and Power MOSFETs with High Repetitive UIS Ruggedness
摘要： A test procedure for repetitive unclamped inductive switching (R-UIS) is presented and the results are reported for state-of-the-art 4H-SiC Schottky barrier diodes (SBDs) and MOSFETs. The energies at failure are 8.3, 8.9, and 10.3 J/cm2 for SBD parts rated to 700, 1200, and 1700 V, respectively. The cumulative thermal effects are intentionally weak for this evaluation, and under these conditions the energies to failure are less than 10% lower for repetitive than single-pulse UIS. 1200 V / 40 mΩ MOSFET parts were stressed with 100 mJ pulses and the integrity of the gate oxide was assessed with a TDDB test. The times to failure for fresh and stressed parts are effectively the same. Tests on parts from several SiC device suppliers showed that high R-UIS ruggedness is a major differentiator of Microsemi’s SiC technology.
关键词： Schottky diode,unclamped inductive switching,4H-SiC,MOSFET,TCAD
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Impact of SiC MOSFET on PV Inverter
摘要： This paper investigates the possibility of improving power density of three-phase grid inverter by adopting SiC MOSFET. Static and dynamic characteristics of trench gate SiC MOSFET, planar gate SiC MOSFET and Si IGBT are compared. The efficiency performance of planar gate SiC MOSFET inverter, trench gate SiC MOSFET inverter and Si IGBT inverter are estimated and compared with increased switching frequency. Finally, these results are verified with 10 kW inverter prototypes.
关键词： trench gate SiC MOSFET,efficiency,planar gate SiC MOSFET,power density,three-phase grid inverter
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 18th International Power Electronics and Motion Control Conference (PEMC) - Budapest, Hungary (2018.8.26-2018.8.30)] 2018 IEEE 18th International Power Electronics and Motion Control Conference (PEMC) - Impact of the Different Parasitic Inductances on the Switching Behavior of SiC MOSFETs
摘要： This paper experimentally investigates into the effects of parasitic inductances on the switching performance of a SiC MOSFET halfbridge. As the switching dynamics of wide-bandgap power semiconductors are by magnitudes larger compared to silicon devices, the parasitic elements in the switching cell become increasingly important, as they limit the current and voltage slopes and cause oscillations. A thorough understanding of those effects is necessary for the design of highly efficient and integrated next-generation power electronic converters. An implementation method to realize cheap and well-reproducible variable inductors in the nanohenry range is presented. Furthermore, a test PCB equipped with SiC MOSFETs is built and double pulse experiments are carried out under the variation of all relevant inductances in the switching cell. The results are analyzed with respect to the switching performance and differences between the switching transients of Si and SiC devices are demonstrated and explained with respect to the parasitic elements.
关键词： switching performance,power electronics,parasitic inductances,double pulse experiments,SiC MOSFET
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Parasitic Capacitors' Impact on Switching Performance in a 10 kV SiC MOSFET Based Converter
摘要： In a converter based on 10 kV SiC MOSFETs, major sources of parasitic capacitance are the anti-parallel junction barrier schottky (JBS) diode, heat sink, and load inductor. A half bridge phase leg test setup is built to investigate these parasitic capacitors’ impact on the switching performance at 6.25 kV. Generally these parasitic capacitors slows down both turn-on and turn-off transient and can cause significant increase in switching energy loss. The impact of the parasitic capacitor in the load inductor is analyzed, which has either very short wire or long wire in series. Switching performance of the phase leg with two different thermal designs are compared to investigate the impact of the parasitic capacitor due to the heat sink. The large parasitic capacitor due to the large drain plate of discrete 10 kV SiC MOSFET for heat dissipation can result in 44.5% increase in switching energy loss at low load current.
关键词： 10 kV SiC MOSFET,parasitic capacitor,switching performance
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Surge current capability of SiC MOSFETs in AC distribution systems
摘要： Whereas short circuit current and time ratings for power converter applications are often stated by SiC device manufacturers, surge current capability for AC electrical apparatus applications are rarely available. This paper present the experimental validation of surge current capability of selected SiC devices for low voltage AC distribution system applications. Because AC electrical apparatus, such as relays, contactors, and circuit breakers, have a different set of system parameters and requirements compared to traditional power converter applications, power semiconductor devices need to be validated from a different point of view. In fact, robustness to inductive short circuit currents, inrush currents, short and long time overload are some of the basic requirements for the utilization of WBG devices for these applications. In this paper, we compare the performance of different SiC MOSFETs under different types of AC waveform conditions.
关键词： semiconductor device characterization,temperature measurement,solid state circuit breaker,WBG semiconductor devices,overload capability,surge current,SiC MOSFET,electrical apparatus
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Avalanche rugged 1200 V 80 m Ω SiC MOSFETs with state-of-the-art threshold voltage stability
摘要： 1200 V 80 m? SiC MOSFETs were developed for 150 mm wafer mass production. Avalanche ruggedness was confirmed by measuring the failure distribution in unclamped inductive switching (UIS) for five wafers. The high voltage blocking reliability was verified by running 1000hr high temperature reverse bias tests for totally 770 devices without failures. The process conditions were optimized for gate oxide integrity and to minimize threshold voltage (VTH) drift both during positive and negative bias stress. Significant reductions of extrinsic defects in the gate oxide breakdown distributions were obtaine d using optimize d process conditions for both product die s and NMO S capacitors. State -of-the -art VTH stability was ve rified by transient measurements of VTH drift during gate bias stress for packaged 80 m? SiC MOSFETs.
关键词： gate oxide integrity,avalanche ruggedness,SiC MOSFET,bias temperature instability
更新于2025-09-04 15:30:14