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Self-driven all-inorganic perovskite microplatelet vertical Schottky junction photodetectors with a tunable spectral response
摘要： Wavelength-selective perovskite photodetectors (PDs) have many applications in optoelectronic field, such as machine vision, imaging and full-color display. However, the instability of organo-inorganic hybrid perovskite material severely limits the commercialization of perovskite-based PDs. In this work, a more stable all-inorganic perovskite, CsPbBr(3-x)Clx (x = 0, 1, 2, 3) microplatelets (MPs), were employed to fabricate Schottky PDs with a simple vertical structure of ITO/MP/Au. The optimized CsPbBr3 MP Schottky PDs exhibit rapid response speed (75 μs) and very low dark current (2 pA) at zero bias. Meanwhile, the device shows a high on/off ratio (>106), a large specific detectivity (>1012 Jones) and linear dynamic range (LDR = 137 dB) with excellent thermal and long-term stability. Furthermore, a tunable spectral response covering from the ultraviolet to visible range is also demonstrated. These results provide a simple avenue to realize self-driven and spectral tunable all-inorganic perovskite Schottky PDs with good stability.
关键词： all-inorganic perovskite,high temperature tolerance,tunable spectral response,vertical structure Schottky photodetector,weak-light sensitivity
更新于2025-09-23 15:19:57
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Monolithic Plasmonic Waveguide Architecture for Passive and Active Optical Circuits
摘要： Guided-wave plasmonic circuits are promising platforms sensing, interconnection, and quantum applications in the subdiffraction regime. Nonetheless, the loss-confinement trade-off remains a collective bottleneck for plasmonic-enhanced optical processes. Here, we report a unique plasmonic waveguide architecture that can alleviate such trade-off and improve the efficiencies of plasmonic-based emission, light-matter-interaction, and detection simultaneously. Specifically, record experimental attributes such as normalized Purcell factor approaching 104, 10 dB amplitude modulation with <1 dB insertion loss and fJ-level switching energy, and photodetection sensitivity and internal quantum efficiency of ?54 dBm and 6.4% respectively have been realized within our amorphous-based, coupled-mode plasmonic structure. The ability to support multiple optoelectronic phenomena while providing performance gains over existing plasmonic and dielectric counterparts offers a clear path toward reconfigurable, monolithic plasmonic circuits.
关键词： plasmonics,epsilon-near-zero,field-effect modulator,Purcell factor,Schottky photodetector
更新于2025-09-19 17:13:59
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CMOS-Compatible Titanium Nitride for On-Chip Plasmonic Schottky Photodetectors
摘要： Here, we propose a waveguide-integrated plasmonic Schottky photodetector (PD) operating based on an internal photoemission process with a titanium nitride plasmonic material. The theoretically examined structure employs an asymmetric metal?semiconductor?metal waveguide configuration with one of the electrodes being gold and the second being either gold, titanium, or titanium nitride. For the first time, we measured a Schottky barrier height of 0.67 eV for titanium nitride on p-doped silicon, which is very close to the optimal value of 0.697 eV. This barrier height will enable photodetection with a high signal-to-noise ratio when operating at a wavelength of 1550 nm. In addition to the measured optical properties of high absorption losses and reasonably large real part of the permittivity that are desired for this type of PD, titanium nitride is also compatible with easy integration on existing complementary metal?oxide?semiconductor technology. The use of titanium nitride results in a shorter penetration depth of the optical mode into the metal when compared to Ti, which in turn enhances the probability for transmission of hot electrons to the adjacent semiconductor, giving rise to an enhancement in responsivity.
关键词： titanium nitride,internal photoemission,CMOS-compatible,waveguide-integrated plasmonic Schottky photodetector,signal-to-noise ratio
更新于2025-09-16 10:30:52