- 标题
- 摘要
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- 实验方案
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[IEEE 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Singapore (2018.7.16-2018.7.19)] 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Characterization of Bandgap Engineering on Operative Transistor Devices by Spectral Photon Emission
摘要： In modern IC technologies, it is very common to use germanium enriched silicon in order to increase field effect transistor (FET) channel carrier mobility for high performance. The germanium content modifies the effective semiconductor band gap EG. Thus, the bandgap energy EG is an important technology performance parameter. EG can be obtained in an LED-like operation of electronic devices, requiring forward biased p-n junctions. P-n junctions in FETs are source or drain to body diodes, usually grounded or reversely biased. This investigation applies a bias to the body that can trigger parasitic forward operation of the source/drain to body p-n junction in any FET. Spectral photon emission (SPE) is taken here as non-destructive in operative method to characterize engineered bandgaps transistor devices, while the device remains fully functional. Proving this technique with the nominal silicon bandgap on an (unstrained) 120nm technology FET, the characterization capability for bandgap engineering is successfully demonstrated using SiGe:C HBT. In IC technology, Ge enriched silicon is recently often used to increase channel carrier mobility. As a next step, 14/16nm p-type FinFET devices have been investigated by applying a bias voltage to the body and thereby activating one of the body/diffusion p-n junctions in forward bias. By measuring the spectral distribution of emission intensity through the backside of the operating device with an InGaAs detector, EG of the engineered bandgap can be determined in the FinFETs as well, in case of the investigated p-type FinFETs to 0.84 eV. This opens a new path for contactless fault isolation by quantitative local determination of bandgap engineering.
关键词： Bandgap engineering,body diode,heterojunction bipolar transistor,body bias voltage,contactless fault isolation,parasitic operation,FinFET,germanium,MOSFET,p-n junction,bandgap characterization,spectral photon emission,SiGe,HBT
更新于2025-09-04 15:30:14
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Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz
摘要： Sub-mm circuit design requires accurate on-wafer characterization of passive and active devices. In industry, characterization of these devices is often performed with off-wafer SOLT calibration. In this work, validity of this characterization procedure above 110 GHz is investigated by an exhaustive study of on-wafer and alumina off-wafer calibration using measurement and electromagnetic (EM) simulation up to 500 GHz. The EM simulation is performed at two different levels, first at the intrinsic level of the devices under test for reference and afterward up to the probe level to simulate different standards used in the off-wafer calibration or in the on-wafer calibration in presence of the probe. Further, EM simulation data is calibrated with the same procedures and tools that is used in the measurement; therefore, it includes the probe-to-substrate coupling. In addition, precise EM model of a commercial impedance standard substrate (ISS) is developed and used to perform the SOLT calibration. A good agreement is observed between measurement and EM modelling for the off-wafer calibration as well as for the on-wafer calibration. Results clearly highlights a limitation of alumina off-wafer methodology above 200 GHz for characterization of Silicon based technologies. Finally a discussion is given on the pros and cons of the off-wafer and on-wafer methodologies.
关键词： probe station,calibration,S-parameter measurement,TRL,THz,SiGe HBT,on-wafer,500 GHz,SOLT
更新于2025-09-04 15:30:14
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[IEEE 2018 48th European Microwave Conference (EuMC) - Madrid, Spain (2018.9.23-2018.9.27)] 2018 48th European Microwave Conference (EuMC) - A Full-Array-Grid-Compatible Wideband Tx/Rx Multipack Using Multifunctional Chips on GaN and SiGe
摘要： A next generation of RF sensor modules for multi-function AESA systems shall provide a combination of different operating modes, e.g. Radar, EW and Communications/Datalink within the same antenna frontend. Typical operating frequencies covering C-Band, X-Band and Ku-Band will require a bandwidth of > 10 GHz, here. As for the realisation of modern active electronically steered antennas (AESA) the Transmit/Receive (Tx/Rx) Modules have to match with geometry constraints a major challenge for these future multifunction RF sensor modules is given by the half-wavelength grid demand derived from the highest frequency with accordant need for grating lobe free Field of View. One key to overcome this geometry demand can be the reduction of the total MMIC chip area with a “high-level” integration of single chip based RF functions into new multifunctional MMICs realised in SiGe- and GaN-technology. Further channel width reduction can be achieved by realising Tx/Rx multipacks instead of single-channel Tx/Rx Modules.
关键词： Tx/Rx Module,Wideband,SiGe,Multifunctional,GaN
更新于2025-09-04 15:30:14
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[IEEE 2018 48th European Microwave Conference (EuMC) - Madrid, Spain (2018.9.23-2018.9.27)] 2018 48th European Microwave Conference (EuMC) - A Scalable Dual-Polarized 256-Element Ku-Band SATCOM Phased-Array Transmitter with 36.5 dBW EIRP Per Polarization
摘要： This paper presents a Ku-band dual-polarized transmit phased-array with 256-elements spaced λ/2 apart at 14 GHz in the x and y directions. The design is based on 64 silicon quad-core transmit chips with 8 channels, and these chips are used to feed a 2x2 quad antennas with dual polarizations. The output P1dB per channel is 12 dBm at 14 GHz. The silicon core-chips are flipped directly on a 12-layer low-cost printed circuit board (PCB) with stacked patch antennas and Wilkinson dividers. The 256-element phased-array results in a measured EIRP of 64.5 dBm and 66.5 dBm at P1dB and Psat, respectively, at normal incidence, per polarization. Measured patterns show a scan region of ±60° in E- and H-planes with low sidelobes and near-ideal patterns. The design achieves a cross polarization level < -27 dB up to ±45° and < -23 dB at ±60° scan angle, in both planes. The array is scalable to allow the construction of large-scale phased-arrays (1024 elements or more). To our knowledge, this represents state-of-the-art in Ku-band transmit phased-arrays in terms of integration level making it suitable for a low-cost mobile Ku-band SATCOM terminal.
关键词： silicon,phased arrays,transmit,SATCOM,antenna,beamforming,Ku-Band,PCB,14 GHz,SiGe,flip-chip
更新于2025-09-04 15:30:14
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34-GBd Linear Transimpedance Amplifier for 200-Gb/s DP-16-QAM Optical Coherent Receivers
摘要： High spectral ef?ciency offered by the coherent optical communication links makes them attractive for the next-generation optical communication links. Using advanced modulation schemes such as dual-polarization quadrature-amplitude modulation (DP-QAM) data rates beyond 200 Gb/s can be achieved. A key component of such links is the wide-bandwidth and high-linearity coherent optical receiver. In this paper, we present a fully differential (FD) optical receiver architecture consisting of a variable-gain transimpedance ampli?er (VG-TIA) followed by a VG ampli?er (VGA). The proposed optical receiver employs a dual-feedback automatic gain control (AGC) loop that controls both the front-end VG-TIA and the following VGA to achieve both low-noise and high-linearity operation. A new photodiode (PD) dc current cancellation scheme is developed and implemented for the full differential front-end TIA. A prototype dual-TIA chip is fabricated in a 0.13-μm SiGe BiCMOS process. The presented TIA achieves 20-pA/√Hz input-referred noise (IRN) density, 27-GHz, 3-dB bandwidth, and 1.5% total harmonic distortion (THD) at 1-mApp input PD current and 500-mVpp output voltage swing. This enables the 34-GBd operation with the bit error rate (BER) of 10?10 and 5.4 × 10?4 using DP-QPSK and DP-16-QAM formats at optical signal-to-noise ratios (OSNRs) of 25 and 30 dB, respectively, demonstrating the 100- and 200-Gb/s single wavelength optical coherent receiver operation. The dual-TIA chip occupies an area of 1.4 mm × 1.6 mm and consumes 313 mW per channel at 34 GBd from a 3.3-V supply.
关键词： dual-polarization (DP)-QPSK,Automatic gain control (AGC),coherent optical communication link,coherent optical receiver,silicon photonics,Linear transimpedance ampli?er (TIA),SiGe,DP-16-quadrature-amplitude modulation (QAM)
更新于2025-09-04 15:30:14
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[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - A Multipurpose 76 GHz Radar Transceiver System for Automotive Applications Based on SiGe MMICs
摘要： In this paper a SiGe chipset for automotive applications in the band around 76 GHz is presented. The first MMIC contains a VCO at a frequency of 38 GHz for LO generation. The second MMIC encloses a complete transceiver at 76 GHz. The main goal of this work is to create a first functional version of a VCO and an one channel transceiver MMIC. With these MMICs it will be possible to build up multipurpose radar systems with a variable number of transceivers, to construct MIMO architectures. What makes this system innovative is the fact, that it is able to handle broader signals than know systems. Furthermore it isn’t limited to one modulation scheme. It is possible to transmit and receive any signal form with platforms build out of these chips. The VCO MMIC achieves a tuning frequency range of 5 GHz with a center frequency of 35 GHz. It consumes 152 mW from a 3.3 V supply. The transceiver MMIC is fully functional and achieves a saturated output power of 9.5 dBm drawing 570 mW from a 3.3 V supply.
关键词： radar,MMICs,fully autonomous driving,SiGe bipolar ICs,VCOs
更新于2025-09-04 15:30:14
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[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - A Gain-Boosted 52–142 GHz Band-Pass Distributed Amplifier in O.13μm SiGe Process with f<inf>max</inf> of 210GHz
摘要： A band-pass gain-boosted distributed amplifier is proposed. The amplifier achieves a bandwidth of 90 GHz at center frequency of 97 GHz and operates up to frequencies as high as 0.67fmax of the transistors. A novel gain-boosted cascode structure as well as band-pass transmission lines are employed to significantly boost the bandwidth and the highest operation frequency of the amplifier. The amplifier shows an average gain of 14.4 dB from 52 GHz to 142 GHz in a 0.13-μm SiGe process with fmax of 210 GHz.
关键词： bandpass amplifiers,gain boosting,distributed amplifiers,millimeter-wave silicon RFICs,maximum oscillation frequency (fmax),SiGe
更新于2025-09-04 15:30:14
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[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - High Linearity 57–66 GHz SiGe Receiver for Outdoor Point-to-Point Communication
摘要： Fully integrated receiver in a superhetrodyne architecture covering the entire 60 GHz frequency range (57-66 GHz) was designed and fabricated in 0.12 μm SiGe technology. The receiver chip includes an image-reject low-noise amplifier (LNA), RF-to-IF mixer, RF variable attenuator, IF variable gain amplifier, quadrature IF-to-baseband de-modulators, tunable baseband filter, phase-locked loop (PLL), and x3 frequency multiplier. The receiver chip achieve maximum gain of 65 dB, 5 dB minimum noise figure, better than 2 dBm IIP3 at high linearity mode, with >75 dB dynamic range, and consumes 630 mW.
关键词： V-Band,SiGe BiCMOS,receiver,mm-Wave integrated circuits,60 GHz
更新于2025-09-04 15:30:14
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[IEEE 2018 15th European Radar Conference (EuRAD) - Madrid, Spain (2018.9.26-2018.9.28)] 2018 15th European Radar Conference (EuRAD) - Performance Evaluation of a 220–260 GHz LO Tunable BPSK/QPSK Wireless Link in SiGe HBT Technology
摘要： This paper reports on characterization and performance evaluation of a 1-m 220-260 GHz tunable carrier wireless link with highly-integrated direct-conversion quadrature TX/RX modules implemented in 0.13μm SiGe HBT technology with ft/fmax of 350/550 GHz. Under limited IF bandwidth constraints of 15 GHz, the maximum achieved data rates for BPSK/QPSK modulation schemes are 35 Gbps with an EVM of 28.9 % and 65 Gbps with an EVM of 31.5 %, respectively. It is further found that the current link performance is not limited by the AWGN-related SNR but mainly affected by the RF front-end imperfections related to large operation bandwidth.
关键词： on-chip lens-integrated antenna,direct conversion quadrature receiver,SiGe HBT,THz communication
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) - San Diego, CA, USA (2018.10.15-2018.10.17)] 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) - A 6 kV ESD-Protected Low-Power 24 GHz LNA for Radar Applications in SiGe BiCMOS
摘要： This paper presents a low-power, ESD-protected 24 GHz single-ended input to differential output single-stage cascode LNA in In?neon’s SiGe BiCMOS technology. The proposed circuit uses bridged T-coils as loads to provide an inductive voltage divider for impedance transformation and extend the bandwidth. To reduce power consumption, the circuit operates from a low supply voltage of 1.5 V. Therefore, to compensate for reduced linearity the circuit uses a multi-tanh doublet. At the center frequency of 24 GHz the ampli?er offers a gain of 12 dB and a noise ?gure of 2.6 dB including the on-chip input balun. The circuit exhibits a competitive linearity of ?10 dBm input-referred 1dB compression point at 24 GHz. The LNA consumes 18 mA from a single 1.5 V supply. The ESD hardness has been investigated using an HBM pulse generator. The circuit exhibits a 6 kV HBM hardness at the input RF pin. The chip size including the pads is 0.49 mm2.
关键词： low-power,radar applications,ESD-protected,SiGe BiCMOS,LNA,24 GHz
更新于2025-09-04 15:30:14