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Sub-micron features from polymer-derived SiOC via imprint lithography
摘要： Silicon oxycarbide (SiOC) is a unique class of materials with great potential for facile manufacturing of complex shaped high temperature parts and devices. In this study, we examine the characteristics of micron-sized ridge and rod patterns of SiOC created by imprint lithography. Feature fidelity, shape change, and shrinkage are studied as a function of pyrolysis condition and feature size. All the features have acceptable surface fidelity under the pyrolysis conditions studied. However, pronounced rounding and flattening of patterned features are observed as the pyrolysis temperature increases or the feature size decreases. Based on the Kelvin and Gibbs-Thomson equations, we can predict the feature evolution and show that the feature rounding and flattening are due to surface diffusion and evaporation-condensation. As a result, the features also have more linear shrinkage than the bulk.
关键词： Shrinkage,Feature fidelity,Silicon oxycarbide,Rounding,Pyrolysis
更新于2025-09-23 15:23:52
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Luminescent silicon oxycarbide thin films obtained with monomethyl-silane by hot-wire chemical vapor deposition
摘要： The use of silicon-based materials can represent enormous advantages to develop optoelectronic devices. The preparation of luminescent silicon oxycarbide thin films deposited by the hot-wire CVD technique using monomethyl-silane as single and safer source of silicon and carbon atoms is here reported. The conditions for deposition that allow obtaining an intense emission on these thin films in a wide region of the visible spectrum at low deposition temperature without further thermal annealing are presented. When the oxygen flow rate was increased, a transition from silicon carbide to silicon oxycarbide was observed. X-ray diffraction confirms the presence of nanocrystalline material. Measurements showed that the origin of the photoluminescence may be to a combination of quantum confinement effects and defects in the silicon oxycarbide matrix, mainly those related to oxygen deficient centers and hydrogen and carbon-related defects. The obtained results are promising for the development of light emitting devices compatible with current technologies at low cost.
关键词： white luminescence,Silicon oxycarbide,HW-CVD,monomethyl-silane
更新于2025-09-23 15:21:21