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Nanomolded buried light-scattering (BLiS) back-reflectors using dielectric nanoparticles for light harvesting in thin-film silicon solar cells
摘要： The article presents a nanoparticle-based buried light-scattering (BLiS) back-re?ector design realized through a simpli?ed nanofabrication technique for the purpose of light-management in solar cells. The BLiS structure consists of a ?at silver back-re?ector with an overlying light-scattering bilayer which is made of a TiO2 dielectric nanoparticles layer with micron-sized inverted pyramidal cavities, buried under a ?at-topped silicon nanoparticles layer. The optical properties of this BLiS back-re?ector show high broadband and wide angular distribution of diffuse light-scattering. The ef?cient light-scattering by the buried inverted pyramid back-re?ector is shown to effectively improve the short-circuit-current density and ef?ciency of the overlying n-i-p amorphous silicon solar cells up to 14% and 17.5%, respectively, compared to the reference ?at solar cells. A layer of TiO2 nanoparticles with exposed inverted pyramid microstructures shows equivalent light scattering but poor ?ll factors in the solar cells, indicating that the overlying smooth growth interface in the BLiS back-re?ector helps to maintain a good ?ll factor. The study demonstrates the advantage of spatial separation of the light-trapping and the semiconductor growth layers in the photovoltaic back-re?ector without sacri?cing the optical bene?t.
关键词： light management,nanomolding,inverted pyramids,thin-?lm solar cells,nanoparticles,photovoltaics
更新于2025-09-23 15:19:57
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Preparation of Hybrid Molybdenum Disulfide/Single Wall Carbon Nanotube–n-Type Silicon Solar Cells
摘要： Carbon nanotube/silicon (CNT/Si) heterojunction solar cells represent one new architecture for photovoltaic devices. The addition of MoS2 to the devices is shown to increase the e?ciency of the devices. Two structures are explored. In one case, the single wall carbon nanotubes (SWCNTs) and MoS2 ?akes are mixed to make a hybrid, which is then used to make a ?lm, while in the other case, a two layer system is used with the MoS2 deposited ?rst followed by the SWCNTs. In all cases, the solar cell e?ciency is improved largely due to signi?cant increases in the ?ll factor. The rise in ?ll factor is due to the semiconducting nature of the MoS2, which helps with the separation of charge carriers.
关键词： molybdenum disul?de (MoS2),single wall carbon nanotubes (SWCNTs),thin ?lm,solar cells
更新于2025-09-16 10:30:52
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High-efficiency CIGS solar cell by optimization of doping concentration, thickness and energy band gap
摘要： In this paper, the performance of copper-indium-gallium-diselenide Cu(In,Ga)Se2 solar cell, with ZnO window layer, ZnSe bu?er layer, CIGS absorber layer and InGaP re?ector layer was studied. The study was performed using the TCAD Silvaco simulator. The e?ects of grading the band gap of CIGS absorber layer, the various thicknesses and doping concentrations of di?erent layers have been investigated. By optimizing the solar cell structure, we have obtained a maximum open circuit voltage of 0.91901 V, a short circuit current density of 39.89910 mA/cm2, a ?ll factor (FF) of 86.67040% and an e?ciency of 31.78% which is much higher than the values for similar CIGS solar cells reported so far.
关键词： e?ciency,CIGS,optimization,TCAD Silvaco,Thin ?lm solar cells
更新于2025-09-16 10:30:52
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Engineering of effective back-contact barrier of CZTSe: Nanoscale Ge solar cells – MoSe2 defects implication
摘要： Using temperature-dependent measurements and device modeling, we systematically study the e?ective back-contact barrier of CZTSe devices to improve the property of the back-contact interface. By comparing with CZTSe devices with various nanoscale Ge con?gurations, CZTSe nanoscale Ge bi-layers devices show the improved power conversion e?ciency by 1.1%. DC magnetron sputtering is used to fabricate CZTSe: nanolayer Ge devices. Critical device parameters are characterized to understand the impact of nanoscale Ge ?lms on the back-contact device characteristics. Based on empirical results, modeling is performed for the in?uence of MoSe2 defects on the e?ective back-contact barrier. Analysis of experimental results of Ge bi-layers devices with the improved back-contact barrier makes a good agreement with modeling and Sentaurus TCAD simulation at the 95% con?dence-level. The conversion e?ciency of CZTSe: nanoscale Ge bi-layers devices is improved up to 8.3%.
关键词： Schottky barrier,Thin ?lm solar cells,CZTSe,Kesterite,Back-contact,Ge nanolayer
更新于2025-09-12 10:27:22
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Magnetron sputtered Sb2Se3-based thin films towards high performance quasi-homojunction thin film solar cells
摘要： Sb2Se3 is a promising candidate for environment-friendly and cost-e?ciently thin ?lm photovoltaics thanks to its material advantages and superior optoelectronic properties. However, it has intrinsically low electrical conductivity, which leads to unsatisfactory device performance and limited scope of applications. Herein, we demonstrated an e?ective strategy of electrical conductivity-induced Sb2Se3-based photovoltaic performance improvement. Three Sb2Se3-based targets with chemical composition of Sb2Se3, Sb2Se3.3 and Sb2(Se0.9I0.1)3 have been ?rstly prepared by using high-temperature melting technique. Then the high-quality thin ?lms can be obtained through an e?ective Radio Frequency (RF) magnetron sputtering process. A novel Sb2Se3 quasi-homojunction thin ?lm solar cell was fabricated for the ?rst time and the highest power conversion e?ciency reaches already a highly interesting 2.65%. The combined features of unique quasi-homojunction device structure and advantageous full-vacuum preparation process further demonstrated its attractive potential for thin ?lm photovoltaic applications.
关键词： Sb2Se3,Quasi-homojunction,Magnetron sputtering,Thin ?lm solar cells,Electrical conductivity
更新于2025-09-12 10:27:22
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Degradation of Mg-doped zinc oxide buffer layers in thin film CdTe solar cells
摘要： Cadmium Sulphide is the conventional n-type bu?er layer used in thin ?lm Cadmium Telluride solar cells. It is well known that Cadmium Sulphide causes optical losses and sulphur di?uses into the absorber during high temperature activation. Sputter-deposited Mg-doped ZnO (MZO) has been shown to be an attractive bu?er layer for Cadmium Telluride solar cells due to its transparency and tuneable band gap. It is also stable to high temperature processing and avoids di?usion of elements into the cadmium telluride absorber during the cadmium chloride activation treatment. However, degradation is observed in solar cells incorporating MZO bu?er layers. Analysis of the MZO ?lm surface potential has revealed signi?cant ?uctuations in the thin ?lm work function once the layer is exposed to the atmosphere following deposition. These ?uctuations are attributed to the high reactivity to water vapour of the MgO contained in the MZO ?lms. This has been analysed using X-ray Photoelectron Spectroscopy to determine corresponding changes in the surface chemistry. The Zinc Oxide component is relatively stable, but the analysis shows that MgO forms a Mg(OH)2 layer on the MZO surface which forms a secondary barrier at the MZO/CdTe interface and/or at the interface between MZO and the Fluorine-doped SnO2. This a?ects the Fill Factor and as a consequence it degrades the conversion e?ciency.
关键词： Surface contamination,Degradation,Thin ?lm solar cells,Cadmium telluride,Magnesium-doped zinc oxide,Hydroxide,Bu?er
更新于2025-09-11 14:15:04