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Graphene quantum dots enhanced ToF-SIMS for single-cell imaging
摘要： Time-of-flight secondary ion mass spectrometry (ToF-SIMS) has shown promising applications in single-cell analysis owing to its high spatial resolution molecular imaging capability. One of the main drawbacks hindering progress in this field is the relatively low ionization efficiency for biological systems. The complex chemical micro-environment in single cells typically causes severe matrix effects, leading to significant signal suppression of biomolecules. In this work, we investigated the signal enhancement effect of graphene quantum dots (GE QDs) in ToF-SIMS analysis. A × 160 magnification of ToF-SIMS signal for amiodarone casted on glass slide was observed by adding amino-functionalized GE QDs (amino-GE QDs), which was significantly higher than adding previously reported signal enhancement materials and hydroxyl group-functionalized GE QDs (hydroxyl-GE QDs). A possible mechanism for GE QD-induced signal enhancement was proposed. Further, effects of amino-GE QDs and hydroxyl-GE QDs on amiodarone-treated breast cancer cells were compared. A significant signal improvement for lipids and amiodarone was achieved using both types of GE QDs, especially for amino-GE QDs. In addition, ToF-SIMS chemical mapping of single cells with better quality was obtained after signal enhancement. Our strategy for effective ToF-SIMS signal enhancement holds great potential for further investigation of drug metabolism pathways and the interactions between the cell and micro-environment.
关键词： Signal enhancement,Single-cell analysis,Graphene quantum dots,Time-of-flight secondary ion mass spectrometry
更新于2025-11-14 15:32:45
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Low temperature platinum chemical vapor deposition on functionalized self-assembled monolayers
摘要： The reaction pathways of Pt CVD using (COD)PtMe2 – xClx (x = 0, 1, 2) have been investigated on functionalized self-assembled monolayers (SAMs) as models for organic substrates. Residual gas analysis for (COD)PtMe2 and (COD)PtMeCl is consistent with the loss of methyl radicals as the initial step in deposition, while for (COD)PtCl2, the first step is the loss of a chlorine radical. It is further shown using x-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry that the deposition process leads to chemical damage of the SAM layer and little Pt deposition. Using this understanding, it is demonstrated that the Pt CVD rate can be controlled using a radical trap. In the presence of 1,4-cyclohexadiene, a well-known alkyl radical trap, Pt deposition was increased by 5× to 10×, creating a room-temperature effective Pt CVD process.
关键词： time-of-flight secondary ion mass spectrometry,x-ray photoelectron spectroscopy,Pt CVD,chemical vapor deposition,self-assembled monolayers,radical trap
更新于2025-09-23 15:21:01
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Investigating the Effects of Chemical Gradients on Performance and Reliability within Perovskite Solar Cells with TOF-SIMS
摘要： Time-of-flight secondary-ion mass spectrometry (TOF-SIMS), a powerful analytical technique sensitive to all components of perovskite solar cell (PSC) materials, can differentiate between the various organic species within a PSC absorber or a complete device stack. The ability to probe chemical gradients through the depth of a device (both organic and inorganic), with down to 100 nm lateral resolution, can lead to unique insights into the relationships between chemistry in the absorber bulk, at grain boundaries, and at interfaces as well as how they relate to changes in performance and/or stability. In this review, the technique is described; then, from the literature, several examples of how TOF-SIMS have been used to provide unique insight into PSC absorbers and devices are covered. Finally, the common artifacts that can be introduced if the data are improperly collected, as well as methods to mitigate these artifacts are discussed.
关键词： perovskite solar cells,time-of-flight secondary-ion mass spectrometry,performance,degradation
更新于2025-09-23 15:19:57
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Epitaxial n++-InGaAs ultra-shallow junctions for highly scaled n-MOS devices
摘要： High electron mobility III-V semiconductors like InGaAs are excellent candidates for sub-10 nm n-metal-oxide-semiconductor (nMOS) devices. One of the critical challenges in downscaling III-V devices is achieving low-resistance contacts by forming low-defect, ultra-shallow junctions < 9 nm in depth, with n-type dopant concentrations above 1019 cm?3. In the current study, we combine time-of-flight secondary ion mass spectrometry (ToF-SIMS) depth profile analysis, atomic force microscopy (AFM) imaging, and high-resolution transmission electron microscopy (HR-TEM) to determine the optimal doping strategy for growing Si-doped n++-In0.25Ga0.75As ultra-shallow junctions by molecular beam epitaxy. We test three different approaches to doping: homogeneous co-deposition, single δ-layer (continuous) doping, and triple δ-layer (pulsed) doping. We demonstrate the formation of technologically suitable n++-In0.25Ga0.75As junctions 5–7 nm deep, grown under As-rich conditions with a single δ-layer at temperatures as low as 400 °C. These junctions have peak Si concentrations between 6 × 1019 and 1 × 1020 cm?3 and high crystal quality. The surface self-organizes into smooth ripples or mounds, up to a peak dopant concentration of ~2 × 1020 cm-3. Above this value, enhanced diffusion of Si and In due to a large population of Ga vacancies increases lattice strain in the semiconductor epilayer, triggering a transition from 2D growth to 3D growth and the formation of In0.85Ga0.15As clusters on the surface.
关键词： Time-of-flight secondary ion mass spectrometry,Indium gallium arsenide,Semiconductor growth,Ultra-shallow junctions,Self-organization,Solid-state diffusion
更新于2025-09-19 17:13:59