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Facile synthesis of tin monosulfide nanosheets via physical vapour deposition and their near-infrared photoresponse
摘要： Two-dimensional layered materials (TDLMs), such as tin sulfide (SnS2), have attracted significant attention due to their vast potential applications in the fields of electronics, optoelectronics, energy conversion, and storage. Tin monosulfide (SnS) is an intrinsic p-type semiconductor in the family of TDLMs. Further explorations of SnS requires the development of efficient synthesis techniques. Here, we report SnS nanosheets grown via a physical vapour deposition (PVD) approach. The morphology was characterized using Raman spectroscopy, scanning electron microscopy (SEM), and atomic force microscopy (AFM). These SnS nanosheets exhibit a square shape with a smooth surface having an average lateral size of 7 μm and a thickness of 12 nm. No impurities were observed in the SnS nanosheets. Furthermore, photodetectors based on such SnS nanosheets were fabricated. The results show that the as-grown SnS has an excellent photo-response performance for an 850-nm laser with a high responsivity of 1604 AW-1, an external quantum efficiency of 2.34 × 105% and a detectivity of 3.42 × 1011 jones, which are larger than those values reported for previous SnS-based photodetectors. Moreover, the rise and fall times are 7.6 and 29.9 ms, respectively. Our work provides a strategy to obtain high-purity and ultrathin SnS while indicating that SnS has a great potential in applications for near-infrared photodetectors.
关键词： near-infrared photoresponse,tin monosulfide,nanosheets,physical vapour deposition
更新于2025-09-11 14:15:04
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Solution-processed Zn <sub/><i>x</i> </sub> Cd <sub/> 1- <i>x</i> </sub> S Buffer Layers for Vapor Transport Deposited SnS Thin-film Solar Cells: Achieving High Open-circuit Voltage
摘要： As an alternative buffer material to CdS, ZnxCd1-xS buffer layers for vapor-transport-deposited SnS thin-film solar cells (TFSCs) were fabricated using the successive ionic layer adsorption and reaction (SILAR) method. Varying the Zn-to-Cd ratio resulted in a series of ZnxCd1-xS thin films with controllable bandgaps in the range of 2.40–3.65 eV. The influence of the Zn-to-Cd ratio on the cell performance was investigated in detail. The Zn0.34Cd0.66S buffer layer was found to be the optimal composition for SnS TFSCs, and a record open-circuit voltage (Voc) of 0.405 V was achieved with an efficiency of 3.72%, while the SILAR-CdS buffer layer rendered a Voc of 0.324 V. The improvement in Voc when using the Zn0.34Cd0.66S buffer layer was corroborated by the spike-type conduction band offset of 0.35 eV with the SnS absorber, as revealed by X-ray photoelectron spectroscopy analysis. In addition, minimized interfacial recombination at the SnS/Zn0.34Cd0.66S heterojunction was confirmed by temperature-dependent Voc analysis under illuminated conditions.
关键词： open-circuit voltage,successive ionic layer adsorption and reaction,thin-film solar cells,Tin monosulfide,buffer layer,zinc cadmium sulfide
更新于2025-09-11 14:15:04
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Layer-Dependent Optoelectronic Properties of 2D van der Waals SnS Grown by Pulsed Laser Deposition
摘要： Layered metal monochalcogenides have attracted significant interest in the 2D family since they show different unique properties from their bulk counterparts. The comprehensive synthesis, characterization, and optoelectrical applications of 2D-layered tin monosulfide (SnS) grown by pulsed laser deposition are reported. Few-layer SnS-based field-effect transistors (FETs) and photodetectors are fabricated on Si/SiO2 substrates. The premium 2D SnS FETs yield an on/off ratio of 3.41 × 106, a subthreshold swing of 180 mV dec?1, and a field effect mobility (μFE) of 1.48 cm2 V?1 s?1 in a 14-monolayer SnS device. The layered SnS photodetectors show a broad photoresponse from ultraviolet to near-infrared (365–820 nm). In addition, the SnS phototransistors present an improved detectivity of 9.78 × 1010 cm2 Hz1/2 W?1 and rapid response constants of 60 ms for grow-time constant τg and 10 ms for decay-time constant τd under extremely weak 365 nm illumination. This study sheds light on layer-dependent optoelectronic properties of 2D SnS that promise to be important in next-generation 2D optoelectronic devices.
关键词： phototransistors,field effect transistors,2D materials,tin monosulfide,p-type FETs
更新于2025-09-11 14:15:04