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Breaking symmetry in device design for self-driven two-dimensional materials based photodetectors
摘要： The advent of graphene and other two-dimensional (2D) materials offers great potential for optoelectronics applications. Various device structures and novel mechanisms have been proposed to realize photodetectors with unique detecting properties. In this minireview, we focus on the self-driven photodetector that has great potential for low-power or even powerless operation required in the internet of things and wearable electronics. To address the general principle of the self-driven properties, we propose and elaborate the concept of symmetry breaking in 2D materials based self-driven photodetectors. We discuss various mechanisms of breaking symmetry for self-driven photodetectors, including asymmetrical contact engineering, field-induced asymmetry, PN homojunction, and PN heterostructure. Typical device examples based on these mechanisms are reviewed and compared. The performance of current self-driven photodetectors is critically assessed and future directions are discussed towards the target application fields.
关键词： symmetry breaking,2D material,self-driven photodetector
更新于2025-09-19 17:13:59
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Interface engineering on ZnO/Au based Schottky junction for enhanced photoresponse of UV detector with TiO2 inserting layer
摘要： Metal-oxide semiconductor ZnO shows enormous potential in the field of photoelectric detection. However, the adsorption of H2O/O2 on its surface unavoidably results in degradation in the photo-response. Herein, AueTiO2eZnO (ATZ) ultraviolet (UV) photodetectors were designed to benefit the photosensing performance by weaken the surface state effect through tuning the Schottky junction interface with TiO2 insertion layer. As expect, 97% enhancement of IPh response together with three orders of magnitude decrease of dark current was triggered. This enhancement is owing to the efficiently separation and extraction of photoexcites under the effect of the stronger and expanding built-in field, which is a result of reduction of space charge density in barrier region induced by inhibiting H2O/O2 adsorption at the ZnO/Au interface. These findings here provide a promising method to boost performances of optoelectronic devices by interface engineering and could be extended to other semiconductor devices.
关键词： Zinc nanowires,Interface engineering,Surface states,Photodetector
更新于2025-09-19 17:13:59
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Manganite Heterojunction Photodetector with Broad Spectral Response Range from 200 nm to 2 ??m
摘要： In this paper, we investigate the broad spectral photocurrent properties of the La0.67Ca0.33MnO3/Si (LCMO/Si) heterojunction from 200 nm to 2.0 μm, as the temperature increases from 95 to 300 K. We observed the junction’s uniform responsivity in the visible range and five absorption peaks at 940 nm, 1180 nm, 1380 nm, 1580 nm, and 1900 nm wavelengths. The temperature showed effective affection to the photocurrents at absorption peaks and the transition point occurred at 216 K, which was also displayed in the temperature dependence of junction resistance. On the basis of the results, we propose a possible model involving the quantum size effect at the junction interface as the mechanism. This understanding of the infrared photodetection properties of oxide heterostructures should open a route for devising future microelectronic devices.
关键词： heterostructure,photodetector,manganite
更新于2025-09-19 17:13:59
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<i>In situ</i> passivation of GaAsSb nanowires for enhanced infrared photoresponse
摘要： Surface passivation of semiconductor nanowires (NWs) is important for their optoelectronic properties and applications. Here, the in situ passivation effect of an epitaxial InP shell and the corresponding photodetector performance is experimentally studied. Compared with the unpassivated GaAsxSb1-x core-only NWs, the GaAsxSb1-x/InP core/shell NWs have shown much stronger photoluminescence and cathodoluminescence intensities. Correspondingly, the fabricated single GaAsxSb1-x/InP core/shell NW photodetector shows a responsivity of 325.1 A/W (@ 1.3 μm and 1.5 V) that is significantly enhanced compared to that of single GaAsxSb1-x core-only NW photodetectors (143.5 A/W), with a comparable detectivity of 4.7×1010 and 5.3×1010 cm√Hz/W, respectively. This is ascribed to the enhanced carrier mobility and carrier concentration by the in situ passivation, which lead to both higher photoconductivity and dark-conductivity. Our results show that in situ passivation is an effective approach for performance enhancement of GaAs1-xSbx NW based optoelectronic devices.
关键词： semiconductor,surface passivation,infrared photodetector,GaAsSb,MOCVD,InP,nanowire
更新于2025-09-19 17:13:59
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Self-powered, all-solution processed, trilayer heterojunction perovskite-based photodetectors
摘要： Heterostructures composed of nano-/micro-junctions, combining the excellent photon harvesting properties of nano-system and ultrafast carrier transfer of micro-system, have shown promising role in high-performance photodetectors. Here, in this paper a highly-sensitive trilayer in which the CdS nanorods (NRs) layer is sandwiched between ZnO/CsPbBr3 interface to reduce self-powered perovskite-based photodetector ITO/ZnO(70nm)/CdS(150nm)/CsPbBr3(200nm)/Au, ratio of 106 with a responsivity of 86 mA/W and a specific detectivity of 6.2×1011 Jones was obtained at zero bias under 85 μW/cm2 405 nm illumination, and its rise/decay time at zero bias is to the strong built-in potential and the internal driving electric-field, an ultra-high On/Off current 0.3/0.25 s. Therefore, the enhanced device performance strongly suggest the great potential of such the interfacial charge carriers’ recombination and the charge transport resistance, is presented. Due a kind of trilayer heterojunction devices for high-performance perovskite photodetectors.
关键词： On/Off current ratio,CdS nanorods (NRs) layer,trilayer heterojunction,specific detectivity,gradient energy alignment,Self-powered photodetector,high-performance
更新于2025-09-19 17:13:59
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High Responsivity and High Rejection Ratio Self-Powered Solar-Blind Ultraviolet Photodetector Based on PEDOT:PSS/β-Ga2O3 Organic/Inorganic p-n Junction
摘要： A high responsivity self-powered solar-blind deep UV (DUV) photodetector with high rejection ratio was proposed based on inorganic/organic hybrid p-n junction. Owing to the high crystalized β-Ga2O3 and excellent transparent conductive polymer PEDOT:PSS, the device exhibited ultrahigh responsivity of 2.6 A/W at 245 nm with a sharp cut off wavelength at 255 nm without any power supply. The responsivity is much larger than that of previous solar-blind DUV photodetectors. Moreover, the device exhibited an ultrahigh solar-blind/UV rejection ratio (R245 nm /R280 nm) of 103, which is two orders of magnitude larger than the average value ever reported in Ga2O3-based solar-blind photodetectors. In addition, the photodetector shows a narrow band-pass response of only 17 nm in width. This work might be of great value in developing high wavelength selective DUV photodetector with respect to low cost for future energy-efficient photoelectric devices.
关键词： Self-Powered,PEDOT:PSS/β-Ga2O3,Plasmonics and Optoelectronics,Organic/Inorganic p-n Junction,Energy Conversion and Storage,High Rejection Ratio,High Responsivity,Solar-Blind Ultraviolet Photodetector
更新于2025-09-19 17:13:59
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Controlled synthesis of GaSe microbelts for high-gain photodetectors induced by the electron trapping effect
摘要： GaSe microbelts were successfully synthesized using Ga/Ga2Se3 as the precursor mixture, where excess Ga was required to serve as the metal catalyst. Meanwhile, a spontaneously oxidized surface amorphous oxide (GaOx) layer formed, which induced a built-in electric field perpendicular to the surface. Benefiting from this effect, a GaSe microbelt-based photodetector attained a high responsivity of B3866 A W(cid:2)1 and a photoconductive gain of up to B1.06 (cid:3) 104. This study sheds light on the controlled synthesis of microstructures and provides a device design concept for high-performance micro/nano optoelectronics.
关键词： high-gain,electron trapping effect,photodetector,GaSe microbelts
更新于2025-09-19 17:13:59
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The photovoltaic and photoconductive photodetector based on GeSe/2D semiconductor van der Waals heterostructure
摘要： Although plenty of two-dimensional (2D) semiconductor heterostructure photodetectors have been studied, there is still a lack of systematic comparison and analysis about photovoltaic and photoconductive 2D semiconductor photodetectors. Taking advantage of the 2D semiconductor van der Waals heterostructure, this work constructs a photovoltaic (PV) GeSe/MoS2 and a photoconductive (PC) GeSe/graphene photodetector, respectively. The PC GeSe/graphene photodetector achieves relatively higher photoresponsivity (R), where R can reach up to 104 AW(cid:2)1. The PV GeSe/MoS2 photodetector, by contrast, obtains a faster photoresponse speed. More importantly, the photoresponse properties of the PV GeSe/MoS2 photodetector can remain constant under the reverse bias, due to the minority carrier conduction in its depletion region at this time. The different characteristics of the two type 2D photodetectors are explored in detail, which can play a guiding role in the construction of high-performance photodetectors.
关键词： photovoltaic,photodetector,photoconductive,van der Waals heterostructure,2D semiconductor,GeSe
更新于2025-09-19 17:13:59
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Fabrication of ?μ-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetector with symmetric interdigital Schottky contacts responding to low intensity light signal
摘要： Owing to the constraint of carrier transport, the dark current is relatively lower in Schottky contacted devices than that in Ohmic contacted devices, leading to a high specific detectivity in photodetectors. In this work, we prepared ε-Ga2O3 thin film by using metal-organic chemical vapor deposition, then constructed a three-pair interdigital ultraviolet solar-blind photodetector with Au electrodes as Schottky contacts. Seen from the results, this photodetector displays an outstanding wavelength selectivity with responsivity of 0.52 A W-1 responding to 250 nm wavelength light. In addition, it shows a photo-to-dark current ratio of 1.82 × 104/6.03 × 102 at 5 V under 40/5 μW cm-2 254 nm light illuminations, respectively, and a low dark current of 1.87 × 10-11 A. Correspondingly, the specific detectivity is 1.67 × 1012 Jones, and the photoresponsivity is 0.198 A W-1/52.54 mA W-1. Overall, ε-Ga2O3 prepared here is certified to be an excellent candidate material to perform high-performance solar-blind detection.
关键词： ε-Ga2O3,high detectivity,Schottky contact,solar-blind photodetector
更新于2025-09-19 17:13:59
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Recent progress on infrared photodetectors based on InAs and InAsSb nanowires
摘要： In recent years, quasi-one-dimensional semiconductor nanowires have attracted numerous research interests in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, an III-V compound semiconductor structure with a narrow bandgap, shows high electron mobility and high absorption from the visible to the mid-wave infrared (MWIR), holding promise for room-temperature high-performance infrared photodetectors. Therefore, the material growth, device preparation, and performance characteristics have attracted increasing attention, enabling high sensitivity InAs nanowire photodetector from the visible to the MWIR at room temperature. This review starts by discussing the growth process of the low-dimensional structure and elementary properties of the material, such as the crystalline phase, mobility, morphology, surface states, and metal contacts. Then, three solutions, including the visible-light assisted infrared photodetection technology, the vertical nanowire array technology, and band engineering by the growth of InAsSb nanowires with increasing Sb components, are elaborated to obtain longer cut-off wavelength coverage of photodetectors. Finally, the potentials and challenges of the state-of-the-art optoelectronic technologies for InAs nanowire MWIR photodetectors are summarized and compared, and preliminary suggestions for the technical development route and prospects are presented. This review mainly delineates the research progress of material growth, device fabrication and performance characterization of InAs nanowire MWIR photodetectors, providing a reference for the development of the next-generation high-performance photodetectors over a wide spectrum range.
关键词： nanowire,vertical array,InAsSb,mid-wave infrared photodetector,InAs
更新于2025-09-19 17:13:59