- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
24.5: Back-Channel-Etched a-IGZO TFTs with TiO <sub/>2</sub> :Nb Protective Layer
摘要： A back-channel-etched (BCE) process for the fabrication of a-IGZO TFTs is demonstrated, in which conductive TiO2:Nb (TNO) thin film is used to serve as protective layer for the a-IGZO active layer. TNO film could excellently protect a-IGZO due to its ultra-small surface roughness. With treatment by N2O plasma + 200°C annealing, the conductive TNO can be converted into an insulator to serve as an in situ passivation layer. Besides, the TNO in the source–drain (S-D) region remain conductive due to the protection of S-D electrodes, which could be proved by the XPS results. Compare with the conventional device without TNO protective layer, the S-D parasitic resistance (RSD) of devices with 1 nm and 5 nm TNO is significantly reduced. The positive bias stress stability is improved as well for the devices with TNO in situ passivation layer.
关键词： amorphous indium gallium zinc oxide (a-IGZO),Nb doped TiO2 (TNO),thin film transistors (TFTs),back-channel-etched (BCE) process
更新于2025-09-23 15:23:52
-
Design and Mechanism of Embedding Specific Carbon Nanotubes in Sputtered Sandwiched InGaZnO Thin Film Transistors
摘要： Amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) with high mobility are highly desirable to achieve high-speed operation in active-matrix displays and large-area sensors. Only a few works provided potential solutions. In this work, we have embedded carbon nanotubes (CNTs) into sputtered a-IGZO film to form a-IGZO/CNT/a-IGZO (ACA) sandwiched channel. In the ACA channel, the CNT percolation networks connected by the a-IGZO film work as high-speed carrier paths to enable faster transport of carriers during the on state while it does not degrade the leakage performance during the off state. The type and the embedding location of the CNT percolation network are critical to determine the ACA device performance, which is analyzed and verified by experiment and simulation. The optimum ACA design has approximately doubled the mobility and the on current density of the TFT. The design owns relatively better uniformity and provides a high-speed TFT solution for the advanced electronics.
关键词： mobility,amorphous indium gallium zinc oxide,carbon nanotube,thin film transistor,sandwiched structure
更新于2025-09-23 15:22:29
-
Effects of ultraviolet photon irradiation and subsequent thermal treatments on solution-processed amorphous indium gallium zinc oxide thin films
摘要： Effects of exposure to ultraviolet (UV) photons and thermal treatments on solution-processed amorphous indium gallium zinc oxide (a-IGZO) films were investigated by X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) spectroscopy. As a result, oxygen vacancies obviously become more abundant in the films sintered at 250 or 300 ?C by the exposure to 7.21 eV photons and less abundant by the subsequent thermal treatment at 250 ?C in air. The drain current also clearly becomes smaller in a thin film transistor fabricated using the IGZO film in a manner opposite to the abundance of oxygen vacancies. That is, the drain current becomes smaller by the UV irradiation and returns to the original high value by the subsequent thermal treatment. This indicates that oxygen vacancies act as trapping centers or scattering centers of electrons. In addition, the reversible change of the drain current with the cycle of UV irradiation and the thermal treatment opens the possibility of the use of the IGZO films as a UV sensor.
关键词： oxygen vacancies,amorphous indium gallium zinc oxide,thin film transistor,UV irradiation,thermal treatment
更新于2025-09-10 09:29:36
-
Modular time division multiplexer: Efficient simultaneous characterization of fast and slow transients in multiple samples
摘要： A modular time division multiplexer (MTDM) device is introduced to enable parallel measurement of multiple samples with both fast and slow decay transients spanning from millisecond to month-long time scales. This is achieved by dedicating a single high-speed measurement instrument for rapid data collection at the start of a transient, and by multiplexing a second low-speed measurement instrument for slow data collection of several samples in parallel for the later transients. The MTDM is a high-level design concept that can in principle measure an arbitrary number of samples, and the low cost implementation here allows up to 16 samples to be measured in parallel over several months, reducing the total ensemble measurement duration and equipment usage by as much as an order of magnitude without sacrificing fidelity. The MTDM was successfully demonstrated by simultaneously measuring the photoconductivity of three amorphous indium-gallium-zinc-oxide thin films with 20 ms data resolution for fast transients and an uninterrupted parallel run time of over 20 days. The MTDM has potential applications in many areas of research that manifest response times spanning many orders of magnitude, such as photovoltaics, rechargeable batteries, amorphous semiconductors such as silicon and amorphous indium-gallium-zinc-oxide.
关键词： fast and slow transients,a-IGZO,MTDM,modular time division multiplexer,amorphous indium-gallium-zinc-oxide,parallel measurement,photoconductivity
更新于2025-09-09 09:28:46
-
[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness
摘要： We investigated the effect of active layer thickness on dynamic threshold voltage (VTH) operation for double-gate (DG) (a-IGZO) thin-film transistors (TFTs). It is found that with 80 nm a-IGZO layer, by adjusting top gate (TG) biases from negative to positive, the bottom gate (BG)-sweep TFTs show a VTH dependence on TG bias with two linear relationships, and subthreshold swing (SS) varies with different TG biases. In contrast, with thinner (20 nm) a-IGZO layer, VTH of the BG-sweep TFTs is linearly modulated with a single slope, and no obvious SS change is observed.
关键词： Thin-film transistors (TFTs),amorphous indium-gallium-zinc-oxide (a-IGZO),double-gate
更新于2025-09-09 09:28:46