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NiO/Perovskite Heterojunction Contact Engineering for Highly Efficient and Stable Perovskite Solar Cells
摘要： Recent research shows that the interface state in perovskite solar cells is the main factor which affects the stability and performance of the device, and interface engineering including strain engineering is an effective method to solve this issue. In this work, a CsBr buffer layer is inserted between NiOx hole transport layer and perovskite layer to relieve the lattice mismatch induced interface stress and induce more ordered crystal growth. The experimental and theoretical results show that the addition of the CsBr buffer layer optimizes the interface between the perovskite absorber layer and the NiOx hole transport layer, reduces interface defects and traps, and enhances the hole extraction/transfer. The experimental results show that the power conversion efficiency of optimal device reaches up to 19.7% which is significantly higher than the efficiency of the device without the CsBr buffer layer. Meanwhile, the device stability is also improved. This work provides a deep understanding of the NiOx/perovskite interface and provides a new strategy for interface optimization.
关键词： lattice mismatches,buffer layers,NiO,contact engineering,perovskite solar cells
更新于2025-09-23 15:21:01
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Improving Low Bandgap Tin Lead Perovskite Solar Cells via Contact Engineering and Gas Quench Processing
摘要： Low bandgap Sn/Pb ABX3 perovskites have reached photovoltaic power conversion efficiencies >20%, but usually have poor stability due to the common use of acidic PEDOT:PSS hole transport layers and A-site cation compositions containing methylammonium (MA). Here, we develop a process to enable high quality MA-free Sn/Pb perovskite films grown using a gas quenching process instead of the conventional antisolvents, which provides improved control of the film growth and eliminates wrinkling. Using this method in a device structure with PTAA instead of PEDOT:PSS as the hole transport layer, devices can reach efficiencies up to 20%mppt at 0.06 cm2 and up to 17.5%mppt at 1 cm2 active area. With these improvements, the devices are characterized for thermal stability and show 80% of the initial power remaining after 4000 hours at 85°C.
关键词： Low bandgap,Tin Lead Perovskite,Gas Quench Processing,Contact Engineering,Solar Cells
更新于2025-09-23 15:19:57
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Monolithic Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions
摘要： In optoelectronic devices based on two-dimensional (2D) semiconductor heterojunctions, the efficient charge transport of photogenerated carriers across the interface is a critical factor to determine the device performances. Here, we report an unexplored approach to boost the optoelectronic device performances of the WSe2-MoS2 p-n heterojunctions via the monolithic-oxidation-induced doping and resultant modulation of the interface band alignment. In the proposed device, the atomically thin WOx layer, which is directly formed by layer-by-layer oxidation of WSe2, is used as a charge transport layer for promoting hole extraction. The use of the ultrathin oxide layer significantly enhanced the photoresponsivity of the WSe2-MoS2 p-n junction devices, and the power conversion efficiency increased from 0.7 to 5.0%, maintaining the response time. The enhanced characteristics can be understood by the formation of the low Schottky barrier and favorable interface band alignment, as confirmed by band alignment analyses and first-principle calculations. Our work suggests a new route to achieve interface contact engineering in the heterostructures toward realizing high-performance 2D optoelectronics.
关键词： Contact engineering,Transition metal dichalcogenides,Heterostructures,Photovoltaics,2D semiconductors,Optoelectronics
更新于2025-09-23 15:19:57
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[Nanostructure Science and Technology] Nanowire Electronics || Properties Engineering of III–V Nanowires for Electronic Application
摘要： Semiconductors have been the core materials of many technological advances in recent years. Silicon, the most studied and used semiconducting material, has been the center of semiconductor industry for decades because it is available abundantly and easy to dope, and silicon dioxide is a superior dielectric material in microelectronic industry. This material can be used to make computer chips, optoelectronics devices, and solar cell. Silicon reshapes the way we live and is unarguably one of the most important materials in modern society. Through its dominant role in the semiconductor industry for now, the search for alternatives is fueled by the unstoppable demand for high-performance and low-power electronics. Among different kinds of semiconductors, III–V semiconductor holds promising properties for replacing silicon, and in particular, the NW structure of III–V semiconductor has been studied extensively.
关键词： nanowire field-effect transistor,semiconductors,contact engineering,crystal engineering,III–V nanowires,surface modification,electronic application
更新于2025-09-09 09:28:46